公开(公告)号：US20240332086A1

公开(公告)日：2024-10-03

申请号：US18739261

申请日：2024-06-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Po-Ching Su ,  Yu-Fu Wang ,  Min-Hua Tsai ,  Ti-Bin Chen ,  Chih-Chiang Wu ,  Tzu-Chin Wu

IPC: H01L21/8234 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L21/823437 ,  H01L21/823462 ,  H01L21/823481 ,  H01L29/4232 ,  H01L29/78

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

公开(公告)号：US12040234B2

公开(公告)日：2024-07-16

申请号：US17393387

申请日：2021-08-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Po-Ching Su ,  Yu-Fu Wang ,  Min-Hua Tsai ,  Ti-Bin Chen ,  Chih-Chiang Wu ,  Tzu-Chin Wu

IPC: H01L29/49 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L21/823437 ,  H01L21/823462 ,  H01L21/823481 ,  H01L29/4232 ,  H01L29/78

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

公开(公告)号：US20200006517A1

公开(公告)日：2020-01-02

申请号：US16053665

申请日：2018-08-02

Applicant: United Microelectronics Corp.

Inventor： Yi-Fan Li ,  Po-Ching Su ,  Cheng-Chia Liu ,  Yen-Tsai Yi ,  Wei-Chuan Tsai ,  Chih-Chiang Wu ,  Ti-Bin Chen ,  Ching-Chu Tseng

IPC: H01L29/66 ,  H01L29/78 ,  H01L23/31

Abstract: A structure of semiconductor device includes a gate structure, disposed on a substrate. A spacer is disposed on a sidewall of the gate structure, wherein the spacer is an l-like structure. A first doped region is disposed in the substrate at two sides of the gate structure. A second doped region is disposed in the substrate at the two sides of the gate structure, overlapping the first doped region. A silicide layer is disposed on the substrate within the second doped region, separating from the spacer by a distance. A dielectric layer covers over the second doped region and the gate structure with the spacer.

公开(公告)号：US20160306912A1

公开(公告)日：2016-10-20

申请号：US14690481

申请日：2015-04-20

Applicant: United Microelectronics Corp.

Inventor： Yen-Hung Chen ,  Chin-Lung Lin ,  Kuan-Wen Fang ,  Po-Ching Su ,  Hung-Wei Lin ,  Sheng-Lung Teng ,  Lun-Wen Yeh

IPC: G06F17/50 ,  H01L21/768 ,  G03F1/36

CPC classification number: G06F17/5081 ,  G03F1/36 ,  H01L21/76807

Abstract: An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Abstract translation: 提供光学邻近校正（OPC）过程。 该方法包括接收对应于半导体结构的第一结构的第一图案，以及对应于所述半导体结构的第二结构的第二图案。 接下来，对第一图案执行第一OPC处理以获得修改的第一图案，其中修改的第一图案具有关于第一图案的第一移位。 对第二图案执行第二OPC处理以获得修订的第二图案，其中第二OPC处理包括根据第一移位移动第二图案。

公开(公告)号：US20240332087A1

公开(公告)日：2024-10-03

申请号：US18739286

申请日：2024-06-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Po-Ching Su ,  Yu-Fu Wang ,  Min-Hua Tsai ,  Ti-Bin Chen ,  Chih-Chiang Wu ,  Tzu-Chin Wu

IPC: H01L21/8234 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L21/823437 ,  H01L21/823462 ,  H01L21/823481 ,  H01L29/4232 ,  H01L29/78

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

公开(公告)号：US20230005795A1

公开(公告)日：2023-01-05

申请号：US17393387

申请日：2021-08-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Fan Li ,  Po-Ching Su ,  Yu-Fu Wang ,  Min-Hua Tsai ,  Ti-Bin Chen ,  Chih-Chiang Wu ,  Tzu-Chin Wu

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/423

Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

公开(公告)号：US09563738B2

公开(公告)日：2017-02-07

申请号：US14690481

申请日：2015-04-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hung Chen ,  Chin-Lung Lin ,  Kuan-Wen Fang ,  Po-Ching Su ,  Hung-Wei Lin ,  Sheng-Lung Teng ,  Lun-Wen Yeh

IPC: G06F17/50 ,  G03F1/36 ,  H01L21/768

CPC classification number: G06F17/5081 ,  G03F1/36 ,  H01L21/76807

Abstract: An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Abstract translation: 提供光学邻近校正（OPC）过程。 该方法包括接收对应于半导体结构的第一结构的第一图案，以及对应于所述半导体结构的第二结构的第二图案。 接下来，对第一图案执行第一OPC处理以获得修改的第一图案，其中修改的第一图案具有关于第一图案的第一移位。 对第二图案执行第二OPC处理以获得修订的第二图案，其中第二OPC处理包括根据第一移位移动第二图案。