公开(公告)号：US07339644B2

公开(公告)日：2008-03-04

申请号：US10732489

申请日：2003-12-11

申请人： Toshiaki Arai ,  Taroh Hasumi

发明人： Toshiaki Arai ,  Taroh Hasumi

IPC分类号： G02F1/1343 ,  G02F1/1333

CPC分类号： G02F1/134363 ,  G02F2001/133357

摘要： An array substrate, a gate insulating layer, and a data line are deposited sequentially on a liquid crystal cell. At a part of this configuration, a planarizing layer covers the gate insulating layer and the data line. The planarizing layer has a groove formed right above the data line. A common electrode is formed on internal walls of the groove and on the flat surface of the planarizing layer corresponding to the shoulders of the groove. A pixel electrode is formed on the flat surface with a certain distance from the common electrode.

摘要翻译： 阵列基板，栅极绝缘层和数据线依次沉积在液晶单元上。 在该配置的一部分，平坦化层覆盖栅极绝缘层和数据线。 平坦化层具有形成在数据线正上方的凹槽。 公共电极形成在凹槽的内壁上，平坦化层的与凹槽的肩部对应的平坦表面上。 在与公共电极有一定距离的平坦表面上形成像素电极。

公开(公告)号：US07570330B2

公开(公告)日：2009-08-04

申请号：US11972958

申请日：2008-01-11

申请人： Toshiaki Arai ,  Taroh Hasumi

发明人： Toshiaki Arai ,  Taroh Hasumi

IPC分类号： G02F1/1333 ,  G02F1/1337

CPC分类号： G02F1/134363 ,  G02F2001/133357

摘要： An array substrate, a gate insulating layer, and a data line are deposited sequentially on a liquid crystal cell. At a part of this configuration, a planarizing layer covers the gate insulating layer and the data line. The planarizing layer has a groove formed right above the data line. A common electrode is formed on internal walls of the groove and on the flat surface of the planarizing layer corresponding to the shoulders of the groove. A pixel electrode is formed on the flat surface with a certain distance from the common electrode.

摘要翻译： 阵列基板，栅极绝缘层和数据线依次沉积在液晶单元上。 在该配置的一部分，平坦化层覆盖栅极绝缘层和数据线。 平坦化层具有形成在数据线正上方的凹槽。 公共电极形成在凹槽的内壁上，平坦化层的与凹槽的肩部对应的平坦表面上。 在与公共电极有一定距离的平坦表面上形成像素电极。

公开(公告)号：US20080137017A1

公开(公告)日：2008-06-12

申请号：US11972958

申请日：2008-01-11

申请人： Toshiaki Arai ,  Taroh Hasumi

发明人： Toshiaki Arai ,  Taroh Hasumi

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F2001/133357

摘要： An array substrate, a gate insulating layer, and a data line are deposited sequentially on a liquid crystal cell. At a part of this configuration, a planarizing layer covers the gate insulating layer and the data line. The planarizing layer has a groove formed right above the data line. A common electrode is formed on internal walls of the groove and on the flat surface of the planarizing layer corresponding to the shoulders of the groove. A pixel electrode is formed on the flat surface with a certain distance from the common electrode.

摘要翻译： 阵列基板，栅极绝缘层和数据线依次沉积在液晶单元上。 在该配置的一部分，平坦化层覆盖栅极绝缘层和数据线。 平坦化层具有形成在数据线正上方的凹槽。 公共电极形成在凹槽的内壁上，平坦化层的与凹槽的肩部对应的平坦表面上。 在与公共电极有一定距离的平坦表面上形成像素电极。

公开(公告)号：US08738267B2

公开(公告)日：2014-05-27

申请号：US12761815

申请日：2010-04-16

申请人： Toshiaki Arai ,  Tadayoshi Okada

发明人： Toshiaki Arai ,  Tadayoshi Okada

IPC分类号： G06F7/00

CPC分类号： B60W40/072 ,  B60W30/17 ,  B60W40/076 ,  B60W2520/10 ,  B60W2520/105 ,  B60W2550/142 ,  B60W2750/308

摘要： A vehicular travel control device according to the invention includes an inter-vehicle distance measuring section that is mounted on a subject vehicle and measures an inter-vehicle distance between the subject vehicle and a preceding vehicle, a target inter-vehicle distance setting section that sets a target inter-vehicle distance, a following travel control section that performs a travel control so as to make the inter-vehicle distance become equal to the target inter-vehicle distance and stops the subject vehicle while following a stopping of the preceding vehicle, a gradient acquiring section that acquires a gradient of a road being traveled of the subject vehicle, and a vehicle speed sensor that measures a travel speed of the subject vehicle. The target inter-vehicle distance setting section sets the target inter-vehicle distance based on the gradient and the travel speed.

摘要翻译： 根据本发明的车辆行驶控制装置包括：车辆间距离测量部，其安装在本车辆上并测量本车与前方车辆之间的车辆间距离;车辆间距离设定部，其设定 目标车辆间距离，后续行驶控制部，其执行行驶控制，以使车辆间距离变得等于目标车辆间距离，并且在跟随前方车辆停止时停止本车辆; 梯度获取部分，其获取被检测车辆行驶的道路的坡度;以及车速传感器，其测量本车辆的行驶速度。 目标车间距离设定部根据坡度和行驶速度来设定目标车间距离。

公开(公告)号：US20120324039A1

公开(公告)日：2012-12-20

申请号：US13486530

申请日：2012-06-01

申请人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

发明人： Ryo Hirana ,  Keisuke Hatasaki ,  Toshiaki Arai

IPC分类号： G06F15/167

CPC分类号： G06F3/0604 ,  G06F3/0631 ,  G06F3/0664 ,  G06F3/067 ,  G06F9/5077

摘要： A first server including a local disk and a second server are logically partitioned by virtualization units. The first and second servers each have a storage controller LPAR with a local disk sharing function running thereon. The storage controller LPARs running on the first and second servers communicate with each other. When a disk I/O command issued by the second LPAR running on the second server is transferred to the local disk of the first server, the second LPAR reads data stored in the local disk or writes data thereto. In this way, the local disk is shared.

摘要翻译： 包括本地磁盘和第二个服务器在内的第一台服务器由虚拟化单元进行逻辑分区。 第一和第二服务器各自具有在其上运行的本地磁盘共享功能的存储控制器LPAR。 在第一和第二服务器上运行的存储控制器LPAR彼此通信。 当由在第二服务器上运行的第二LPAR发出的磁盘I / O命令被传送到第一服务器的本地磁盘时，第二LPAR读取存储在本地磁盘中的数据或向其写入数据。 这样，本地磁盘是共享的。

公开(公告)号：US20120211755A1

公开(公告)日：2012-08-23

申请号：US13365780

申请日：2012-02-03

申请人： Takashige Fujimori ,  Toshiaki Arai

发明人： Takashige Fujimori ,  Toshiaki Arai

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606

摘要： Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.

摘要翻译： 本发明公开了一种薄膜晶体管的制造方法，包括：在栅电极之上形成由氧化物半导体构成的沟道层，其间设置有栅极绝缘膜，形成由适于覆盖沟道层的导电材料制成的沟道保护膜 以及与沟道保护膜接触的方式形成一对源电极和漏电极; 并且通过依赖于导电材料和结晶氧化物半导体之间的选择性的蚀刻去除源/漏电极之间的沟道保护膜的区域。

公开(公告)号：US08222643B2

公开(公告)日：2012-07-17

申请号：US12603049

申请日：2009-10-21

申请人： Toshiaki Arai ,  Yoshio Inagaki

发明人： Toshiaki Arai ,  Yoshio Inagaki

IPC分类号： H01L29/04 ,  H01L31/20

CPC分类号： H01L29/66765 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/78678

摘要： A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

摘要翻译： 一种具有晶体硅膜的薄膜晶体管，其在绝缘基板上形成有栅电极和栅极绝缘膜，并且在对应于栅电极的区域中具有沟道区域; 绝缘通道保护膜，其选择性地形成在与晶体硅膜上的沟道区对应的区域中; 具有源极区域和漏极区域的n +硅膜，其夹着与沟道保护膜上的沟道区域对应的区域和晶体硅膜; 以及具有分别对应于源极区域和漏极区域的源极电极和漏极电极的金属膜。

公开(公告)号：US20120046844A1

公开(公告)日：2012-02-23

申请号：US13257223

申请日：2010-05-14

申请人： Tadayoshi Okada ,  Toshiaki Arai

发明人： Tadayoshi Okada ,  Toshiaki Arai

IPC分类号： B60W30/18 ,  B60W10/18 ,  B60W10/04

CPC分类号： B60W30/18018 ,  B60T7/122 ,  B60T7/22 ,  B60W10/06 ,  B60W10/184 ,  B60W30/18027 ,  B60W30/18063 ,  B60W30/18118 ,  B60W2550/142 ,  B60W2710/105

摘要： When a start-up operation by a driver is detected while a vehicle is maintained at a stopped state, a target driving force for suppressing the movement of the vehicle on the road to be driven is calculated, based on the grade obtained regarding the road to be driven on. After the vehicle is driven by the target driving force, the braking force is released so as to terminate the maintaining of the stopped state of the vehicle. Preferably, the state of being driven by the target driving force is maintained until the releasing of the braking force is completed. When the releasing of the braking force is completed, the driving force is increased to start-up the vehicle. With such a start-up control, vehicles are prevented from moving temporarily in a direction opposite from the traveling direction, and a smooth star-up can be achieved.

摘要翻译： 当车辆维持在停止状态时，当检测到驾驶员的起动操作时，根据获得的关于道路的等级来计算用于抑制待行驶的道路上的车辆的移动的目标驱动力 被驱赶。 在车辆被目标驱动力驱动之后，释放制动力，以终止车辆的停止状态的维持。 优选地，保持由目标驱动力驱动的状态，直到制动力的释放完成。 当制动力的释放完成时，驱动力增加以启动车辆。 通过这种启动控制，防止车辆沿与行进方向相反的方向临时移动，并且可以实现平稳的起落。

公开(公告)号：US20120043548A1

公开(公告)日：2012-02-23

申请号：US13287689

申请日：2011-11-02

申请人： Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga ,  Hiroshi Sagawa ,  Kiwamu Miura

发明人： Toshiaki Arai ,  Narihiro Morosawa ,  Kazuhiko Tokunaga ,  Hiroshi Sagawa ,  Kiwamu Miura

IPC分类号： H01L29/786

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L2251/5315

摘要： A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same. The thin film transistor includes, sequentially over a substrate, a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer.

摘要翻译： 能够使能够容易地供给氧化物半导体层的氧和良好的晶体管特性的薄膜晶体管能够恢复，并且包括该薄膜晶体管的显示单元。 薄膜晶体管在基板上顺序地包括栅电极，栅极绝缘膜，包括沟道区的氧化物半导体层，以及覆盖沟道区A的沟道保护层。源极和漏电极形成在氧化物 位于沟道保护层两侧的半导体层，源电极和漏电极中的至少一个具有露出氧化物半导体层的孔。

公开(公告)号：US07955916B2

公开(公告)日：2011-06-07

申请号：US12121398

申请日：2008-05-15

申请人： Naoki Hayashi ,  Toshiaki Arai

发明人： Naoki Hayashi ,  Toshiaki Arai

IPC分类号： H01L21/84 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/4908

摘要： A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.

摘要翻译： 一种制造半导体装置的方法，包括以下步骤：在基板上形成由金属氧化物和半导体薄膜构成的绝缘膜的叠层结构; 在层叠结构的顶部形成光吸收层; 并且将能够被光吸收层吸收的波长的能量束照射在光吸收层上，同时通过在光吸收层中产生的热而使绝缘膜和半导体薄膜结晶。