公开(公告)号：US20110215328A1

公开(公告)日：2011-09-08

申请号：US13037441

申请日：2011-03-01

申请人： Narihiro Morosawa ,  Takashige Fujimori ,  Toshiaki Arai

发明人： Narihiro Morosawa ,  Takashige Fujimori ,  Toshiaki Arai

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/786

摘要： There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of manufacturing steps, and a method of manufacturing the thin film transistor, and a display device having the thin film transistor. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film; and a source electrode and a drain electrode provided to contact the crystallized film.

摘要翻译： 提供了具有均匀且良好的电特性的薄膜晶体管，并且具有允许制造步骤数量减少的简单配置，以及薄膜晶体管的制造方法以及具有薄膜晶体管的显示装置。 薄膜晶体管包括：栅电极; 具有非晶膜和结晶膜的多层结构的氧化物半导体膜; 以及设置成与晶化膜接触的源电极和漏电极。

公开(公告)号：US20130089940A1

公开(公告)日：2013-04-11

申请号：US13613337

申请日：2012-09-13

申请人： Toshiaki Arai ,  Takashige Fujimori

发明人： Toshiaki Arai ,  Takashige Fujimori

IPC分类号： H01L33/08

CPC分类号： H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

摘要： A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints.

摘要翻译： 制造显示单元的方法包括：在衬底上形成具有氧化物半导体层的薄膜晶体管; 以及在所述薄膜晶体管的上方形成包括多个显示元件的显示区域。 使用靶和衬底彼此相对的溅射法形成氧化物半导体层。 目标由氧化物半导体制成，并且包括以平面形式接合的多个分割部分。 由多个分割部分形成并且彼此并排的两个接合部之间的间隔间隔等于或小于在显示区域中基本正交的方向上出现的亮度分布的宽度 到关节。

公开(公告)号：US08815619B2

公开(公告)日：2014-08-26

申请号：US13613337

申请日：2012-09-13

申请人： Toshiaki Arai ,  Takashige Fujimori

发明人： Toshiaki Arai ,  Takashige Fujimori

IPC分类号： H01L21/00 ,  H01L29/10

CPC分类号： H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

摘要： A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints.

摘要翻译： 制造显示单元的方法包括：在衬底上形成具有氧化物半导体层的薄膜晶体管; 以及在所述薄膜晶体管的上方形成包括多个显示元件的显示区域。 使用靶和衬底彼此相对的溅射法形成氧化物半导体层。 目标由氧化物半导体制成，并且包括以平面形式接合的多个分割部分。 由多个分割部分形成并且彼此并排的两个接合部之间的间隔间隔等于或小于在显示区域中基本正交的方向上出现的亮度分布的宽度 到关节。

公开(公告)号：US20120211755A1

公开(公告)日：2012-08-23

申请号：US13365780

申请日：2012-02-03

申请人： Takashige Fujimori ,  Toshiaki Arai

发明人： Takashige Fujimori ,  Toshiaki Arai

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78606

摘要： Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor.

摘要翻译： 本发明公开了一种薄膜晶体管的制造方法，包括：在栅电极之上形成由氧化物半导体构成的沟道层，其间设置有栅极绝缘膜，形成由适于覆盖沟道层的导电材料制成的沟道保护膜 以及与沟道保护膜接触的方式形成一对源电极和漏电极; 并且通过依赖于导电材料和结晶氧化物半导体之间的选择性的蚀刻去除源/漏电极之间的沟道保护膜的区域。

公开(公告)号：US20100193772A1

公开(公告)日：2010-08-05

申请号：US12654658

申请日：2009-12-29

申请人： Narihiro Morosawa ,  Takashige Fujimori

发明人： Narihiro Morosawa ,  Takashige Fujimori

IPC分类号： H01L51/52 ,  H01L29/24

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78606

摘要： Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

摘要翻译： 提供了能够提高包括氧化物半导体层的薄膜晶体管的可靠性的薄膜晶体管。 一种薄膜晶体管，包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与所述栅极绝缘膜上的所述栅电极对应的沟道区域的氧化物半导体层; 至少形成在与氧化物半导体层上的沟道区对应的区域中的沟道保护膜; 和源/漏电极。 氧化物半导体层的顶面和侧面被栅极绝缘膜上的源极/漏极电极和沟道保护层覆盖。

公开(公告)号：US08426851B2

公开(公告)日：2013-04-23

申请号：US12654658

申请日：2009-12-29

申请人： Narihiro Morosawa ,  Takashige Fujimori

发明人： Narihiro Morosawa ,  Takashige Fujimori

IPC分类号： H01L29/10 ,  H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78606

摘要： Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

公开(公告)号：US08247811B2

公开(公告)日：2012-08-21

申请号：US12694354

申请日：2010-01-27

申请人： Narihiro Morosawa ,  Takashige Fujimori

发明人： Narihiro Morosawa ,  Takashige Fujimori

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3244 ,  H01L2251/5315

摘要： A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.

摘要翻译： 薄膜晶体管包括：形成在基板上的栅电极; 形成与所述栅电极对应的沟道区域的氧化物半导体层; 形成在所述基板和所述栅极上的第一栅极绝缘膜，并且包括氮化硅膜; 选择性地形成为与所述氧化物半导体层接触的第二栅极绝缘膜，所述第二栅极绝缘膜在与所述氧化物半导体层对应的所述第一栅极绝缘膜上的区域中，并且包括氧化硅膜和氧氮化硅膜之一; 源极/漏极; 和保护膜。 氧化物半导体层的上表面和侧表面以及第二栅极绝缘膜的侧表面在第一栅极绝缘膜上被源/漏电极和保护膜覆盖。

公开(公告)号：US20100193784A1

公开(公告)日：2010-08-05

申请号：US12694354

申请日：2010-01-27

申请人： Narihiro Morosawa ,  Takashige Fujimori

发明人： Narihiro Morosawa ,  Takashige Fujimori

IPC分类号： H01L29/786 ,  H01L33/00

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/3244 ,  H01L2251/5315

摘要： A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film.

摘要翻译： 薄膜晶体管包括：形成在基板上的栅电极; 形成与所述栅电极对应的沟道区域的氧化物半导体层; 形成在所述基板和所述栅极上的第一栅极绝缘膜，并且包括氮化硅膜; 选择性地形成为与所述氧化物半导体层接触的第二栅极绝缘膜，所述第二栅极绝缘膜在与所述氧化物半导体层对应的所述第一栅极绝缘膜上的区域中，并且包括氧化硅膜和氧氮化硅膜之一; 源极/漏极; 和保护膜。 氧化物半导体层的上表面和侧表面以及第二栅极绝缘膜的侧表面在第一栅极绝缘膜上被源/漏电极和保护膜覆盖。