公开(公告)号：US11602856B2

公开(公告)日：2023-03-14

申请号：US17371901

申请日：2021-07-09

申请人： Tokyo Electron Limited

发明人： Tatsuo Hatano ,  Naoki Watanabe

IPC分类号： H01L21/67 ,  B25J11/00 ,  B25J21/00 ,  B25J19/00 ,  B25J17/02 ,  H01L21/677

摘要： A vacuum transfer device includes: a main body including an arm unit with an internal mechanical part therein and a vacuum seal, and configured to transfer a high temperature substrate in a vacuum; a substrate holder connected to the main body to hold the substrate; a heat transport member provided on a surface of the main body and made of a material having a higher thermal conductivity than that of a material constituting the main body in a creeping direction to transport heat transferred from the substrate to the substrate holder; and a heat radiator configured to dissipate heat transported by the heat transport member.

公开(公告)号：US09976217B2

公开(公告)日：2018-05-22

申请号：US14511399

申请日：2014-10-10

申请人： Tokyo Electron Limited

发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

IPC分类号： C23C16/16 ,  C23C16/52 ,  C23C16/455 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

CPC分类号： C23C16/52 ,  C23C16/16 ,  C23C16/45514 ,  C23C16/45521 ,  C23C16/45597 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785

摘要： The method of forming a thin film feeds a raw material gas causing a reversible decomposition reaction toward an upper surface of substrate placed on a placing table in a processing container; decomposes the raw material gas with a predetermined decomposing scheme thereby forming a thin film of the raw material gas on the surface of the substrate; and feeds a decomposition restraint gas having a characteristic of restraining a thermal decomposition of the raw material gas separately from the raw material gas toward a peripheral portion of the substrate when the raw material gas is fed to the substrate, thereby restraining the thermal decomposition of the raw material gas and selectively preventing the thin film from being formed in the peripheral portion of the substrate.

公开(公告)号：US09362167B2

公开(公告)日：2016-06-07

申请号：US14620886

申请日：2015-02-12

申请人： TOKYO ELECTRON LIMITED

发明人： Atsushi Shimada ,  Shinji Furukawa ,  Tatsuo Hatano

IPC分类号： H01L21/20 ,  H01L21/768 ,  H01L21/285

CPC分类号： H01L21/76882 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/14 ,  C23C14/3464 ,  C23C14/5806 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76876

摘要： A method of supplying cobalt to a recess formed in an insulation film of an object to be processed is disclosed. In one embodiment, the method includes forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess, forming a cobalt film on the cobalt nitride film, and heating the cobalt film.

摘要翻译： 公开了一种向被处理物的绝缘膜形成的凹部供给钴的方法。 在一个实施例中，该方法包括在绝缘膜的表面上形成氮化钴膜，该表面包括限定凹部的表面，在氮化钴膜上形成钴膜，并加热钴膜。

公开(公告)号：US20140377947A1

公开(公告)日：2014-12-25

申请号：US14374879

申请日：2013-01-24

申请人： TOKYO ELECTRON LIMITED

发明人： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768

CPC分类号： H01L21/76879 ,  C23C16/0272 ,  C23C16/16 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru3(CO)12 gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.

摘要翻译： 当在SiCOH膜中形成凹部时，从膜中除去C以形成损伤层。 如果通过氢氟酸等去除损伤层，则表面变得疏水。 通过供给硼化合物气体，硅化合物气体或含有三甲基铝的气体到SiCOH膜，B，Si或Al被吸附在SiCOH膜上。 这些原子与Ru结合，容易在SiCOH膜上形成Ru膜。 Ru膜使用例如Ru 3（CO）12气体和CO气体形成。 铜填充在凹部中，并且通过进行CMP处理形成上侧布线结构。

公开(公告)号：US11764092B2

公开(公告)日：2023-09-19

申请号：US17779873

申请日：2020-11-20

申请人： Tokyo Electron Limited

发明人： Tatsuo Hatano ,  Tetsuya Miyashita ,  Naoki Watanabe ,  Naoyuki Suzuki

IPC分类号： H01L21/677 ,  B25J9/02 ,  B25J9/12 ,  B25J11/00 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67742 ,  B25J9/02 ,  B25J9/12 ,  B25J11/0095 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67167 ,  H01L21/67748 ,  H01L21/68707

摘要： The substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein; a transfer unit movable on the planar motor; and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

公开(公告)号：US10910215B2

公开(公告)日：2021-02-02

申请号：US15639682

申请日：2017-06-30

申请人： TOKYO ELECTRON LIMITED

发明人： Naoki Watanabe ,  Tatsuo Hatano ,  Shinji Furukawa ,  Naoyuki Suzuki

IPC分类号： H01L21/02 ,  C23C14/56 ,  C23C14/50 ,  C23C14/34 ,  H01L43/12 ,  H01L21/28

摘要： There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.

公开(公告)号：US20140045329A1

公开(公告)日：2014-02-13

申请号：US13962327

申请日：2013-08-08

申请人： TOKYO ELECTRON LIMITED

发明人： Tadahiro ISHIZAKA ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Hiroyuki Toshima ,  Yasushi Mizusawa

IPC分类号： H01L21/02

CPC分类号： H01L21/02104 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/312 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Cu wiring forming method forms Cu wiring in a recess of a predetermined pattern including a trench formed in an insulating film on a substrate surface. The method includes: forming a barrier film at least on a surface of the recess; forming a Cu film by PVD to fill the recess with the Cu film; forming an additional layer on the Cu film; polishing an entire surface by CMP to form the Cu wiring in the recess; forming a metal cap including a manganese oxide film on an entire surface including the insulating film and the Cu wiring of the substrate after performing the CMP polishing; and forming a dielectric cap on the metal cap.

摘要翻译： Cu布线形成方法在包括形成在基板表面上的绝缘膜中的沟槽的预定图案的凹部中形成Cu布线。 该方法包括：至少在凹部的表面上形成阻挡膜; 通过PVD形成Cu膜以用Cu膜填充凹部; 在Cu膜上形成附加层; 通过CMP抛光整个表面以在凹槽中形成Cu布线; 在进行CMP抛光之后，在包括绝缘膜和基板的Cu布线的整个表面上形成包括氧化锰膜的金属盖; 以及在所述金属盖上形成电介质盖。

公开(公告)号：US20140030886A1

公开(公告)日：2014-01-30

申请号：US14042198

申请日：2013-09-30

申请人： TOKYO ELECTRON LIMITED

发明人： Takara FUKUSHIMA ,  Tadahiro Ishizaka ,  Atsushi Gomi ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC分类号： H01L21/768

CPC分类号： H01L21/76846 ,  C23C14/046 ,  H01L21/2855 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A copper (Cu) wiring forming method includes forming a barrier film on the entire surface of a wafer which has a trench, forming a ruthenium (Ru) film on the barrier film, and filling the trench by forming a pure copper film on the ruthenium film by a physical vapor deposition (PVD). The method further includes forming a copper alloy film on the pure copper film by the PVD, forming a copper wiring by polishing the entire surface by a chemical mechanical polishing, forming a cap layer made of a dielectric material on the copper wiring, and segregating an alloy component included in the copper alloy film in a region including a portion corresponding an interface between the copper wiring and the cap layer.

摘要翻译： 铜（Cu）布线形成方法包括在具有沟槽的晶片的整个表面上形成阻挡膜，在阻挡膜上形成钌（Ru）膜，并通过在钌上形成纯铜膜来填充沟槽 膜通过物理气相沉积（PVD）。 该方法还包括通过PVD在纯铜膜上形成铜合金膜，通过化学机械抛光对整个表面进行抛光而形成铜布线，在铜布上形成由电介质材料制成的覆盖层，并将 包括在铜合金膜中的合金成分在包括对应于铜布线和盖层之间的界面的部分的区域中。

公开(公告)号：US12033878B2

公开(公告)日：2024-07-09

申请号：US18230929

申请日：2023-08-07

申请人： Tokyo Electron Limited

发明人： Tatsuo Hatano ,  Tetsuya Miyashita ,  Naoki Watanabe ,  Naoyuki Suzuki

IPC分类号： H01L21/677 ,  B25J9/02 ,  B25J9/12 ,  B25J11/00 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67742 ,  B25J9/02 ,  B25J9/12 ,  B25J11/0095 ,  H02K7/14 ,  H02K41/02 ,  H01L21/67167 ,  H01L21/67748 ,  H01L21/68707

摘要： A substrate transfer apparatus includes a planar motor provided in a transfer chamber and having coils arranged therein, a transfer unit movable on the planar motor, and a control unit configured to control an energization of the coils. The transfer unit includes two bases having magnets arranged thereon and configured to be movable on the planar motor, a substrate support member configured to support a substrate, and a link mechanism configured to connect the two bases and the substrate support member to each other.

公开(公告)号：US11251027B2

公开(公告)日：2022-02-15

申请号：US16881693

申请日：2020-05-22

申请人： TOKYO ELECTRON LIMITED

发明人： Tatsuo Hatano ,  Naoki Watanabe ,  Koji Maeda

IPC分类号： H01J37/32 ,  H01L21/687 ,  H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  H01L43/12

摘要： A stage device for holding a substrate in a processing apparatus for processing the substrate includes a stage, a stage rotating mechanism, and a cold heat transfer mechanism. The stage is configured to hold the substrate in a processing chamber. The stage rotating mechanism includes a rotation shaft extending downward from a center of a bottom surface of the stage and a motor configured to rotate the stage via the rotation shaft. The cold heat transfer mechanism includes at least one cold heat transfer body that is fixedly disposed at a position spaced away from the rotation shaft below the stage and is configured to transfer cold heat of a chiller. The cold heat transfer mechanism is disposed with a gap between the cold heat transfer mechanism and the stage.