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    Substrate placing table and substrate processing apparatus
    4.
    发明授权
    Substrate placing table and substrate processing apparatus 有权

    公开(公告)号：US11217470B2

    公开(公告)日：2022-01-04

    申请号：US16721086

    申请日：2019-12-19

    申请人： Tokyo Electron Limited

    发明人： Satoshi Taga ,  Naoyuki Satoh ,  Tatsuo Nishita

    IPC分类号： H01L21/683 ,  H01J37/32 ,  C23C4/134

    摘要： A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

    ELECTRODE MANUFACTURING APPARATUS FOR LITHIUM ION CAPACITOR AND ELECTRODE MANUFACTURING METHOD THEREFOR
    5.
    发明申请
    ELECTRODE MANUFACTURING APPARATUS FOR LITHIUM ION CAPACITOR AND ELECTRODE MANUFACTURING METHOD THEREFOR 有权
    用于锂离子电容器的电极制造装置及其电极制造方法

    公开(公告)号：US20140178594A1

    公开(公告)日：2014-06-26

    申请号：US14132403

    申请日：2013-12-18

    申请人： Tokyo Electron Limited

    发明人： Yoshiyuki Kobayashi ,  Satoshi Taga

    IPC分类号： C23C4/12 ,  C23C4/08

    CPC分类号： C23C4/08 ,  C23C4/12 ,  C23C4/137 ,  H01G11/06 ,  H01G11/32 ,  H01G11/50 ,  H01G11/86 ,  H01M4/0419 ,  H01M4/139 ,  H01M4/587 ,  H01M10/0525 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54

    摘要： A time for doping an electrode material on an electrode sheet with a lithium ion can be reduced. The electrode manufacturing apparatus includes a processing chamber 200 to and from which the electrode sheet is loaded and unloaded; a rare gas supply unit 230 configured to introduce a rare gas into the processing chamber; an exhaust device 220 configured to exhaust an inside of the processing chamber to a certain vacuum level; and a lithium thermal spraying unit 210 configured to dope a carbon material C with the lithium ion by forming a lithium thin film on the carbon material of the electrode sheet W loaded into the processing chamber while melting and spraying lithium-containing powder.

    摘要翻译： 可以减少在具有锂离子的电极片上掺杂电极材料的时间。 电极制造装置包括加载和卸载电极片的处理室200; 稀有气体供给单元230，被配置为向所述处理室内引入稀有气体; 排气装置220，其构造成将处理室的内部排出到一定的真空度; 以及锂热喷涂单元210，其被配置为通过在装载到处理室中的电极片W的碳材料上形成锂薄膜，同时熔融和喷射含锂粉末而将碳材料C与锂离子掺杂。

    Substrate placing table and substrate processing apparatus
    6.
    发明授权
    Substrate placing table and substrate processing apparatus 有权

    公开(公告)号：US11676847B2

    公开(公告)日：2023-06-13

    申请号：US18047248

    申请日：2022-10-17

    申请人： Tokyo Electron Limited

    发明人： Satoshi Taga ,  Naoyuki Satoh ,  Tatsuo Nishita

    IPC分类号： H01L21/683 ,  C23C4/134 ,  H01J37/32

    CPC分类号： H01L21/6833 ,  C23C4/134 ,  H01J37/32697 ,  H01J37/32724 ,  H01J37/32183 ,  H01J2237/002

    摘要： A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

    Substrate processing apparatus and susceptor
    7.
    发明授权
    Substrate processing apparatus and susceptor 有权

    公开(公告)号：US10557190B2

    公开(公告)日：2020-02-11

    申请号：US14163115

    申请日：2014-01-24

    申请人： Tokyo Electron Limited

    发明人： Satoshi Taga ,  Yoshiyuki Kobayashi

    IPC分类号： H01L21/683 ,  C23C4/08 ,  C23C16/458 ,  H01L21/687

    摘要： A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.

    PLACING TABLE STRUCTURE
    8.
    发明申请
    PLACING TABLE STRUCTURE 有权
    配置表结构

    公开(公告)号：US20150044368A1

    公开(公告)日：2015-02-12

    申请号：US14511399

    申请日：2014-10-10

    申请人： Tokyo Electron Limited

    发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Masamichi Hara ,  Kaoru Yamamoto ,  Satoshi Taga

    IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/16

    CPC分类号： C23C16/52 ,  C23C16/16 ,  C23C16/45514 ,  C23C16/45521 ,  C23C16/45597 ,  C23C16/4585 ,  H01L21/67017 ,  H01L21/68785

    摘要： Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for the purpose of placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.

    摘要翻译： 提供一种放置台结构，其设置在处理容器中并且要对其进行处理，以便通过使用产生具有可逆性的热分解反应的原料气体在处理容器中在被检体上形成薄膜。 放置台结构设置有用于将待处理对象放置在放置表面（即，放置台结构的上表面）和布置在放置台中的分解抑制气体供应装置的放置台 用于将抑制原料气体的热分解的分解抑制气体朝向放置在放置台的放置面的被处理体的周边部分的目的。

    Substrate placing table and substrate processing apparatus
    9.
    发明授权
    Substrate placing table and substrate processing apparatus 有权

    公开(公告)号：US11508603B2

    公开(公告)日：2022-11-22

    申请号：US17534150

    申请日：2021-11-23

    申请人： Tokyo Electron Limited

    发明人： Satoshi Taga ,  Naoyuki Satoh ,  Tatsuo Nishita

    IPC分类号： H01L21/683 ,  C23C4/134 ,  H01J37/32

    摘要： A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

    Method of manufacturing electrostatic chuck and electrostsatic chuck
    10.
    发明授权
    Method of manufacturing electrostatic chuck and electrostsatic chuck 有权

    公开(公告)号：US11227786B2

    公开(公告)日：2022-01-18

    申请号：US16028699

    申请日：2018-07-06

    申请人： TOKYO ELECTRON LIMITED

    发明人： Satoshi Taga ,  Yoshiyuki Kobayashi ,  Kazuya Nagaseki

    IPC分类号： H01L21/683 ,  H01J37/32 ,  C23C4/11 ,  C23C4/134

    摘要： Disclosed is a method of manufacturing an electrostatic chuck configured to attract a substrate by applying a voltage to a first electrode layer. The method includes forming the first electrode layer on a first resin layer on a base and thermally spraying ceramics or a ceramics-containing material on the first electrode layer. The thermally spraying the ceramic or the ceramics-containing material includes transporting powder of a thermal spray material, introduced into a nozzle from a feeder, by a plasma generation gas and spraying the powder from an opening in a tip end portion of the nozzle, dissociating the sprayed plasma generation gas by electric power of 500 W to 10 kW to generate plasma having a common axis with the nozzle, and forming the powder of the thermal spray material into a liquid phase by the generated plasma to form a film on the first electrode layer.