公开(公告)号：US20130072033A1

公开(公告)日：2013-03-21

申请号：US13675784

申请日：2012-11-13

申请人： TOKYO ELECTRON LIMITED

发明人： Masayuki Kohno ,  Tatsuo Nishita ,  Toshio Nakanishi

IPC分类号： H01L21/314

CPC分类号： C23C16/511 ,  C23C16/345 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/518 ,  H01L29/78 ,  H01L29/7843

摘要： A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.

公开(公告)号：US11217470B2

公开(公告)日：2022-01-04

申请号：US16721086

申请日：2019-12-19

申请人： Tokyo Electron Limited

发明人： Satoshi Taga ,  Naoyuki Satoh ,  Tatsuo Nishita

IPC分类号： H01L21/683 ,  H01J37/32 ,  C23C4/134

摘要： A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

公开(公告)号：US11508603B2

公开(公告)日：2022-11-22

申请号：US17534150

申请日：2021-11-23

申请人： Tokyo Electron Limited

发明人： Satoshi Taga ,  Naoyuki Satoh ,  Tatsuo Nishita

IPC分类号： H01L21/683 ,  C23C4/134 ,  H01J37/32

摘要： A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.

公开(公告)号：US08569186B2

公开(公告)日：2013-10-29

申请号：US13675784

申请日：2012-11-13

申请人： Tokyo Electron Limited

发明人： Masayuki Kohno ,  Tatsuo Nishita ,  Toshio Nakanishi

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C8/54

CPC分类号： C23C16/511 ,  C23C16/345 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/518 ,  H01L29/78 ,  H01L29/7843

摘要： A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas.

摘要翻译： 等离子体处理装置通过使用具有多个槽的平面天线将微波引入处理室来产生等离子体。 通过使用等离子体处理装置，将引入到处理室中的含氮气体和含硅气体变为等离子体状态，并且在通过使用等离子体将基板表面上的氮化硅膜沉积到 通过氮气气体的类型和处理压力的组合来控制要形成的氮化硅膜的应力。

公开(公告)号：US11676847B2

公开(公告)日：2023-06-13

申请号：US18047248

申请日：2022-10-17

申请人： Tokyo Electron Limited

发明人： Satoshi Taga ,  Naoyuki Satoh ,  Tatsuo Nishita

IPC分类号： H01L21/683 ,  C23C4/134 ,  H01J37/32

CPC分类号： H01L21/6833 ,  C23C4/134 ,  H01J37/32697 ,  H01J37/32724 ,  H01J37/32183 ,  H01J2237/002

摘要： A substrate placing table according to an exemplary embodiment includes a base and an electrostatic chuck provided on the base. The electrostatic chuck includes a lamination layer portion, an intermediate layer, and a covering layer. The lamination layer portion is provided on the base. The intermediate layer is provided on the lamination layer portion. The covering layer is provided on the intermediate layer. The lamination layer portion includes a first layer, an electrode layer, and a second layer. The first layer is provided on the base. The electrode layer is provided on the first layer. The second layer is provided on the electrode layer. The intermediate layer is provided between the second layer and the covering layer and is in close contact with the second layer and the covering layer. The second layer is a resin layer. The covering layer is ceramics.