-
公开(公告)号：US12072625B2
公开(公告)日：2024-08-27
申请号：US17238541
申请日：2021-04-23
Applicant: Tokyo Electron Limited
Inventor： Takuya Miura , Kouichirou Tanaka , Shogo Takahashi , Yusuke Miyakubo , Kentaro Yoshihara
IPC: G03F7/00
CPC classification number: G03F7/0025
Abstract: A nozzle unit for a liquid treatment apparatus that performs a liquid treatment on a substrate using a liquid, includes a first gas nozzle having a discharge flow path for allowing a first gas to flow through the discharge flow path and a first discharge port for discharging the first gas flowing through the discharge flow path toward a surface of the substrate, wherein the first discharge port is formed so as to extend in a first direction along the surface, and wherein a width of the discharge flow path in the first direction increases as the discharge flow path approaches the first discharge port, so that the first gas is discharged radially from the first discharge port.
-
公开(公告)号：US11480881B2
公开(公告)日：2022-10-25
申请号：US17385387
申请日：2021-07-26
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Kouichirou Tanaka , Masahiro Fukuda , Atsushi Ookouchi
IPC: G03F7/16
Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.
-
3.发明申请公开(公告)号：US20210191271A1
公开(公告)日：2021-06-24
申请号：US17130126
申请日：2020-12-22
Applicant: Tokyo Electron Limited
Inventor： Takuya Miura , Shougo Takahashi , Kouichirou Tanaka
Abstract: A liquid processing apparatus includes a substrate holder configured to hold a substrate; a processing liquid supply configured to supply a processing liquid onto a front surface of the substrate; a gas supply configured to supply a gas onto the front surface of the substrate; and a controller. The gas supply includes a diffusion nozzle which is provided with multiple discharge openings respectively elongated at different angles with respect to the front surface of the substrate. The controller performs controlling the gas supply to jet the gas from the diffusion nozzle onto a region of the front surface of the substrate including at least a central portion thereof in a state that the processing liquid is supplied on the front surface of the substrate.
-
公开(公告)号：US20190096706A1
公开(公告)日：2019-03-28
申请号：US16139392
申请日：2018-09-24
Applicant: Tokyo Electron Limited
Inventor： Akiko Kai , Kouichirou Tanaka , Hiroshi Ichinomiya , Masahiro Fukuda
IPC: H01L21/67 , H01L21/687
Abstract: When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
-
公开(公告)号：US10128136B2
公开(公告)日：2018-11-13
申请号：US15671325
申请日：2017-08-08
Applicant: Tokyo Electron Limited
Inventor： Masahiro Fukuda , Hiroshi Ichinomiya , Koichi Obata , Taro Yamamoto , Kouichirou Tanaka
IPC: H01L21/76 , H01L21/67 , B05C5/02 , B05C11/08 , B05C11/10 , B08B3/08 , B08B3/10 , G03F7/16 , H01L21/027 , G03F7/30
Abstract: There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
-
Patent Agency Ranking
公开(公告)号：US20180047592A1
公开(公告)日：2018-02-15
申请号：US15671325
申请日：2017-08-08
Applicant: Tokyo Electron Limited
Inventor： Masahiro Fukuda , Hiroshi Ichinomiya , Koichi Obata , Taro Yamamoto , Kouichirou Tanaka
CPC classification number: H01L21/6715 , B05C5/0258 , B05C11/08 , B05C11/1002 , B08B3/08 , B08B3/10 , G03F7/162 , G03F7/3021 , H01L21/0273 , H01L21/67051 , H01L21/67178
Abstract: There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
-
公开(公告)号：US11923218B2
公开(公告)日：2024-03-05
申请号：US17177270
申请日：2021-02-17
Applicant: Tokyo Electron Limited
Inventor： Kouichirou Tanaka , Masahiro Fukuda
IPC: H01L21/67 , H01L21/027 , H01L21/673 , H01L21/687
CPC classification number: H01L21/67225 , H01L21/0273 , H01L21/67023 , H01L21/6715 , H01L21/67313 , H01L21/68764
Abstract: A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.
-
公开(公告)号：US11720026B2
公开(公告)日：2023-08-08
申请号：US16466864
申请日：2017-12-15
Applicant: Tokyo Electron Limited
Inventor： Akiko Kai , Kousuke Yoshihara , Kouichirou Tanaka , Hiroshi Ichinomiya
IPC: G03F7/32 , H01L21/67 , H01L21/687 , G03F7/00
CPC classification number: G03F7/32 , H01L21/6715 , H01L21/67051 , H01L21/67098 , H01L21/68764 , G03F7/70925
Abstract: A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.
-
公开(公告)号：US11508589B2
公开(公告)日：2022-11-22
申请号：US16139392
申请日：2018-09-24
Applicant: Tokyo Electron Limited
Inventor： Akiko Kai , Kouichirou Tanaka , Hiroshi Ichinomiya , Masahiro Fukuda
IPC: H01L21/67 , H01L21/02 , H01L21/687
Abstract: When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
-
公开(公告)号：US11079679B2
公开(公告)日：2021-08-03
申请号：US16656925
申请日：2019-10-18
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A method includes forming a liquid puddle of a mixed solution of the diluting liquid and the processing liquid; rotating the substrate at a first rotation speed which allows the mixed solution located at a region facing an inner side than an edge of the liquid contact surface to stay between the liquid contact surface and the surface of the substrate and allows the mixed solution located at a region facing an outer side than the edge of the liquid contact surface to be diffused toward an edge of the substrate; rotating the substrate at a second rotation speed smaller than the first rotation speed after the substrate is rotated at the first rotation speed; and moving the nozzle toward the edge of the substrate while discharging the processing liquid from the discharge hole in a state that the substrate is rotated at the second rotation speed.
-
-
-
-
-
-
-
-
-
Search Results
16
records
(took 0.015 seconds)
