摘要:
A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension.
摘要:
A sensor having a monolithically integrated structure for detecting thermal radiation includes: a carrier substrate, a cavity, and at least one sensor element for detecting thermal radiation. Incident thermal radiation strikes the sensor element via the carrier substrate. The sensor element is suspended in the cavity by a suspension.
摘要:
An authentication-encryption unit provides at least one encryption element, where each encryption element encrypts a plain-data block and accordingly generates a cipher-data block. A common checksum is calculated over each cipher-data block. It is possible to select via a selection unit in each encryption element which data bits in each cipher-data block are to be used to calculate the common checksum.
摘要:
An authentication-encryption unit provides at least one encryption element, where each encryption element encrypts a plain-data block and accordingly generates a cipher-data block. A common checksum is calculated over each cipher-data block. It is possible to select via a selection unit in each encryption element which data bits in each cipher-data block are to be used to calculate the common checksum.
摘要:
The invention relates to a method for capping a MEMS wafer (1), in particular a sensor and/or actuator wafer, with at least one mechanical functional element (10). According to the invention, it is provided that the movable mechanical functional element (10) is fixed by means of a sacrificial layer (14), and that a cap layer (19) is applied to, in particular epitaxially grown onto, the sacrificial layer (14) and/or to at least one intermediate layer (17) applied to the sacrificial layer (14). The invention also relates to a capped MEMS wafer (1).
摘要:
A component including a via for electrical connection between a first and a second plane of a substrate is provided. The substrate has a borehole having an inner wall that is coated with a conductive layer made of an electrically conductive material, an intermediate layer being disposed between the inner wall and the conductive layer. The intermediate layer includes electrically insulating SiC.
摘要:
The invention relates to a method for capping a MEMS wafer (1), in particular a sensor and/or actuator wafer, with at least one mechanical functional element (10). According to the invention, it is provided that the movable mechanical functional element (10) is fixed by means of a sacrificial layer (14), and that a cap layer (19) is applied to, in particular epitaxially grown onto, the sacrificial layer (14) and/or to at least one intermediate layer (17) applied to the sacrificial layer (14). The invention also relates to a capped MEMS wafer (1).
摘要:
An exhaust gas treatment device for a CVD device for the deposition of silicon-rich nitride in a CVD process, in particular an LPCVD process. An aftertreatment chamber is provided into which ammonia gas can be metered. In addition, a CVD device and an exhaust gas treatment method are described.
摘要:
A terminating element (1) for a central element (9) of an optical cable (13) comprises a sleeve (3) closed at one end for receiving the end of the central element (9) or core of the optical cable (13). An open end of the sleeve (3) is provided with a pair of flexible vanes (2) or legs having seating regions (5,6) which can be clamped onto the exterior of the cable (13) and each of the legs has free ends to help center the end of the cable and the terminating element (1) into a cable introduction (15), whose junction can be sealed by a section of a shrink hose (16) or sleeve (3).
摘要:
A component including a via for electrical connection between a first and a second plane of a substrate is provided. The substrate has a borehole having an inner wall that is coated with a conductive layer made of an electrically conductive material, an intermediate layer being disposed between the inner wall and the conductive layer. The intermediate layer includes electrically insulating SiC.