公开(公告)号：US20240072756A1

公开(公告)日：2024-02-29

申请号：US17900599

申请日：2022-08-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Shaoping TANG ,  Keegan MARTIN ,  Ting-Ta YEN

IPC: H03H9/02 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H03H9/171

Abstract: A BAW resonator includes first and second electrodes located over a substrate. A piezoelectric layer is located between the first and second electrodes. A guard ring is located between the piezoelectric layer and the second electrode, and is spaced apart from a perimeter of the electrode. The guard ring has a width in a range from 2.5 μm to 3.5 μm.

公开(公告)号：US20230033082A1

公开(公告)日：2023-02-02

申请号：US17389619

申请日：2021-07-30

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta YEN ,  Yao YU ,  Hassan Omar ALI

IPC: H03H9/54 ,  H03H9/17 ,  H03H9/02

Abstract: A circuit includes a semiconductor substrate and an integrated passive device. The integrated passive device is on a surface of the semiconductor substrate. The integrated passive device is in a metal layer on the semiconductor substrate. The metal layer is at least tens of micrometers thick. The integrated passive device may be an inductor or a capacitor in some examples.

公开(公告)号：US20240002216A1

公开(公告)日：2024-01-04

申请号：US17854457

申请日：2022-06-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hakhamanesh MANSOORZARE ,  Ting-Ta YEN ,  Yao YU

IPC: B81B3/00 ,  B81B7/02

CPC classification number: B81B3/0021 ,  B81B7/02 ,  B81B3/0051 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0163 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/033

Abstract: A circuit includes: integrated circuit (IC) layers; a cavity formed in at least one of the IC layers; and a micro-acoustic resonator suspended in the cavity by an anchor. The anchor includes: a bridge portion coupled to the micro-acoustic resonator and extending over the cavity; a first acoustic reflector portion adjacent the bridge portion, extending over the cavity, and oriented differently than the bridge portion; and a second acoustic reflector portion adjacent the first acoustic reflector portion, extending over the cavity, and oriented differently than the first acoustic reflector portion.

公开(公告)号：US20220357483A1

公开(公告)日：2022-11-10

申请号：US17515047

申请日：2021-10-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeronimo SEGOVIA FERNANDEZ ,  Ting-Ta YEN ,  Hassan Omar ALI

IPC: G02B1/00 ,  H03H9/17 ,  G02B5/00 ,  G01J1/04

Abstract: An apparatus for an optical detector includes a bulk acoustic wave (BAW) resonator including a piezoelectric layer and a metal layer, an acoustic Bragg mirror on the BAW resonator and including a first acoustic impedance layer and a second acoustic impedance layer different than the first acoustic impedance layer, and a plasmonic metasurface on the acoustic Bragg mirror and including structures of geometric patterns arranged in an array.

公开(公告)号：US20210214212A1

公开(公告)日：2021-07-15

申请号：US17135305

申请日：2020-12-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Ting-Ta YEN ,  Jeronimo SEGOVIA-FERNANDEZ ,  Bichoy BAHR ,  Benjamin COOK

IPC: B81B3/00 ,  B81C1/00

Abstract: A device includes a substrate having first and second layers and an insulator layer between the first and second layers. A microelectromechanical system (MEMS) structure is provide on a portion of the second layer. A trench is formed in the second layer and around at least a part of a periphery of the portion of the second layer. An undercut is formed in the insulator layer and adjacent to the portion of the second layer. The undercut separates the portion of the second layer from the first layer. First and second pinholes extend from a plane of the insulator layer and in the first layer. The first and second pinholes are in fluid communication with the undercut and the trench.

公开(公告)号：US20200212880A1

公开(公告)日：2020-07-02

申请号：US16236601

申请日：2018-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeronimo SEGOVIA FERNANDEZ ,  Peter SMEYS ,  Ting-Ta YEN

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/13 ,  C23C14/35 ,  C23C16/455

Abstract: A resonator includes a substrate, an acoustic Bragg mirror disposed above the substrate, and a bottom metal layer disposed above the acoustic Bragg mirror. The resonator also includes a piezoelectric plate disposed above the bottom metal layer. The resonator further includes a top metal layer disposed above the piezoelectric plate. The top metal layer comprises multiple fingers within a single plane and the width of each of the fingers is between 75%-125% of a thickness of the piezoelectric plate.

公开(公告)号：US20240039500A1

公开(公告)日：2024-02-01

申请号：US17877206

申请日：2022-07-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hakhamanesh MANSOORZARE ,  Ting-Ta YEN ,  Jeronimo SEGOVIA-FERNANDEZ ,  Bichoy BAHR

IPC: H03H3/007 ,  H03H9/10

CPC classification number: H03H3/0076 ,  H03H9/1057 ,  H03H2009/02283

Abstract: A micro-mechanical resonator die includes: micro-mechanical resonator die layers; a cavity formed in at least one of the micro-mechanical resonator die layers; and a micro-mechanical resonator suspended in the cavity. The micro-mechanical resonator includes: a base; a first resonator portion extending from the base along a first plane; and a second resonator portion extending from the base along a second plane. The first resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the first resonator portion out of the first plane. The second resonator portion is configured to operate in an out-of-plane flexural mode that displaces at least part of the second resonator portion out of the second plane and out-of-phase relative to the first resonator portion.

公开(公告)号：US20230275553A1

公开(公告)日：2023-08-31

申请号：US17683086

申请日：2022-02-28

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Steffen Paul LINK ,  Ting-Ta YEN ,  Jeronimo SEGOVIA-FERNANDEZ

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H03H3/04 ,  H03H9/175 ,  H03H2003/0435

Abstract: In some examples, an apparatus includes a first metal layer having a thickness, a piezoelectric material layer having a first side and a second side that is opposite the first side, the piezoelectric material layer first side abutting the first metal layer, the piezoelectric material layer second side having recesses, and a second metal layer abutting the piezoelectric material layer second side, the second metal layer having extensions that fill the recesses to form a metal frame that is at least partially recessed into the piezoelectric material layer. The first metal layer, the piezoelectric material layer, and the second metal layer form a resonator body. The metal frame has a shape governing a resonant mode of the resonator body.

公开(公告)号：US20220242722A1

公开(公告)日：2022-08-04

申请号：US17388301

申请日：2021-07-29

Applicant: Texas Instruments Incorporated

Inventor： Ting-Ta YEN ,  Jeronimo SEGOVIA-FERNANDEZ ,  Ricky Alan JACKSON ,  Benjamin COOK

IPC: B81B7/00

Abstract: A semiconductor system includes a substrate. The substrate has a front side and a back side. A device is formed on the front side of the substrate. A vertical spring is etched in the substrate about the device. A trench is etched in the front side of the substrate about the device. A wall of the trench forms a side of the vertical spring.

公开(公告)号：US20190229254A1

公开(公告)日：2019-07-25

申请号：US16233350

申请日：2018-12-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Peter SMEYS ,  Mohammad Hadi MOTIEIAN NAJAR ,  Ting-Ta YEN ,  Ahmad BAHAI

IPC: H01L41/053 ,  H01L27/20 ,  H01L41/09 ,  H01L41/113 ,  H01L41/047 ,  H04R1/40 ,  H04R17/00

Abstract: In one example, a semiconductor device includes an acoustic medium, a first transducer on the acoustic medium, a first electrode coupled to the first transducer, a second transducer on the acoustic medium, and a second electrode coupled to the second acoustic transducer. The semiconductor device also includes a semiconductor substrate to support the acoustic medium and first and second transducers. Mold compound encapsulates at least a portion of the acoustic medium, the first acoustic transducer, the second acoustic transducer, and the semiconductor substrate.