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    LASER DICING FOR SINGULATION
    7.
    发明申请
    LASER DICING FOR SINGULATION 有权

    公开(公告)号：US20230040267A1

    公开(公告)日：2023-02-09

    申请号：US17960568

    申请日：2022-10-05

    Applicant: Texas Instruments Incorporated

    Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

    IPC: H01L21/78 ,  H01L21/683 ,  H01L21/67 ,  H01L21/268 ,  H01L23/58

    Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

    LASER DICING FOR SINGULATION
    8.
    发明申请
    LASER DICING FOR SINGULATION 审中-公开

    公开(公告)号：US20200051860A1

    公开(公告)日：2020-02-13

    申请号：US16057126

    申请日：2018-08-07

    Applicant: Texas Instruments Incorporated

    Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

    IPC: H01L21/78 ,  H01L21/683 ,  H01L23/58 ,  H01L21/67 ,  H01L21/268

    Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

    WAFER DIE SEPARATION
    10.
    发明申请
    WAFER DIE SEPARATION 审中-公开
    烘干机分离

    公开(公告)号：US20160118300A1

    公开(公告)日：2016-04-28

    申请号：US14985705

    申请日：2015-12-31

    Applicant: Texas Instruments Incorporated

    Inventor： Genki Yano

    IPC: H01L21/78 ,  H01L21/687 ,  H01L21/683

    CPC classification number: H01L21/78 ,  H01L21/67 ,  H01L21/683 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/68721 ,  H01L21/68735 ,  H01L2221/68336

    Abstract: A method of singulating a wafer starts with fracturing the wafer. The method may also include attaching the dicing tape sheet to a ring frame; relatively raising a portion of the dicing tape sheet supporting the wafer with respect to the ring frame; and attaching support tape to the ring frame and the dicing tape sheet.

    Abstract translation: 单晶化晶片的方法从晶片断裂开始。 该方法还可以包括将切割带片附接到环形框架上; 使相对于环形框架支撑晶片的切割带片的一部分相对地升高; 并将支撑带附接到环形框架和切割胶带片材。

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