公开(公告)号：US11469141B2

公开(公告)日：2022-10-11

申请号：US16057126

申请日：2018-08-07

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L23/58 ,  H01L21/683 ,  H01L21/67 ,  H01L21/268

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US20230040267A1

公开(公告)日：2023-02-09

申请号：US17960568

申请日：2022-10-05

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L21/683 ,  H01L21/67 ,  H01L21/268 ,  H01L23/58

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US20200051860A1

公开(公告)日：2020-02-13

申请号：US16057126

申请日：2018-08-07

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L21/683 ,  H01L23/58 ,  H01L21/67 ,  H01L21/268

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US12198982B2

公开(公告)日：2025-01-14

申请号：US17960568

申请日：2022-10-05

Applicant: Texas Instruments Incorporated

Inventor： Michael Todd Wyant ,  Dave Charles Stepniak ,  Matthew John Sherbin ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/67 ,  H01L21/683 ,  H01L23/58

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

公开(公告)号：US11482442B2

公开(公告)日：2022-10-25

申请号：US17184553

申请日：2021-02-24

Applicant: Texas Instruments Incorporated

Inventor： Matthew John Sherbin ,  Michael Todd Wyant ,  Dave Charles Stepniak ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/683 ,  H01L21/687

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

公开(公告)号：US20210183683A1

公开(公告)日：2021-06-17

申请号：US17184553

申请日：2021-02-24

Applicant: Texas Instruments Incorporated

Inventor： Matthew John Sherbin ,  Michael Todd Wyant ,  Dave Charles Stepniak ,  Sada Hiroyuki ,  Shoichi Iriguchi ,  Genki Yano

IPC: H01L21/683 ,  H01L21/687

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.