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公开(公告)号：US20240219425A1
公开(公告)日：2024-07-04
申请号：US18603091
申请日：2024-03-12
发明人： Xinkun Huang , Dok Won Lee , Christopher Michael Ledbetter , Bret Alan Dahl , Roy Deidrick Solomon
CPC分类号： G01R1/07342 , G01R1/0491 , G01R33/072
摘要： A wafer probe test system having a probe card with a probe head, a rotary magnet, a magnetic sensor positioned to sense the magnetic field of the rotary magnet and a controller coupled to the probe card, where the probe head has probe needles to engage features of test sites of a wafer in a wafer plane of orthogonal first and second directions, and the rotary magnet is rotatable around an axis of a third direction to provide a magnetic field to the wafer, in which the controller includes a model of magnetic flux density in the first, second and third directions at the respective test sites of the wafer as a function of a rotational angle of the rotary magnet, a probe needle height along the third direction and a measured magnetic flux density of the magnetic sensor.
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公开(公告)号：US10782154B2
公开(公告)日：2020-09-22
申请号：US15633516
申请日：2017-06-26
摘要： An integrated AMR sensor includes a half bridge with two resistors, a Wheatstone bridge with four resistors, or a first Wheatstone bridge with four resistors in an orthogonal configuration, and a second Wheatstone bridge with four resistors in an orthogonal configuration, oriented at 45 degrees with respect to the first Wheatstone bridge. Each resistor includes first magnetoresistive segments with current flow directions oriented at a first tilt angle with respect to a reference direction of the resistor, and second magnetoresistive segments with current flow directions oriented at a second tilt angle with respect to the reference direction. The tilt angles are selected to advantageously cancel angular errors due to shape anisotropies of the magnetoresistive segments. In another implementation, the disclosed system/method include a method for identifying tilt angles which cancel angular errors due to shape anisotropies of the magnetoresistive segments.
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公开(公告)号：US10663534B2
公开(公告)日：2020-05-26
申请号：US14557611
申请日：2014-12-02
发明人： Mona M. Eissa , Dok Won Lee
摘要： An integrated circuit includes a fluxgate magnetometer. The magnetic core of the fluxgate magnetometer is encapsulated with a layer of encapsulant of a nonmagnetic metal or a nonmagnetic alloy. The layer of encapsulate provides stress relaxation between the magnetic core material and the surrounding dielectric. A method for forming an integrated circuit has the magnetic core of a fluxgate magnetometer encapsulated with a layer of a nonmagnetic metal or nonmagnetic alloy to eliminate delamination and to substantially reduce cracking of the dielectric that surrounds the magnetic core.
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公开(公告)号：US10302457B2
公开(公告)日：2019-05-28
申请号：US15407990
申请日：2017-01-17
发明人： William David French , Dok Won Lee
IPC分类号： G01D5/14
摘要： An integrated AMR angular sensor includes a first sensor resistor and a second sensor resistor. The first sensor resistor and the second sensor resistor each has a plurality of magnetoresistive segments containing magnetoresistive material that are electrically coupled in series. The magnetoresistive segments of each sensor resistor are parallel/anti-parallel to each other. The magnetoresistive segments of the second sensor resistor are perpendicular to the magnetoresistive segments of the first sensor resistor. The first magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to a sensor central point of the integrated AMR angular sensor. Similarly, the second magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to the sensor central point.
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公开(公告)号：US10276787B2
公开(公告)日：2019-04-30
申请号：US15041575
申请日：2016-02-11
摘要： An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.
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6.发明申请公开(公告)号：US20190101601A1
公开(公告)日：2019-04-04
申请号：US16205937
申请日：2018-11-30
发明人： Ann Margaret Gabrys , Dok Won Lee
摘要： A microelectronic device, possibly a packaged microelectronic device, contains a magnetic sensor component and magnetizable structural features. Magnetic moments of the magnetizable structural features are aligned parallel to each other. The microelectronic device is formed by applying a magnetic field so as to align magnetic moments of the magnetizable structural features with the applied magnetic field. Application of the magnetic field is subsequently discontinued. The magnetic moments of the magnetizable structural features remain aligned parallel to each other after the applied magnetic field is discontinued.
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公开(公告)号：US10211255B2
公开(公告)日：2019-02-19
申请号：US15865825
申请日：2018-01-09
摘要： Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US10199573B2
公开(公告)日：2019-02-05
申请号：US15605540
申请日：2017-05-25
发明人： Mona Eissa , Dok Won Lee , Byron Shulver , Yousong Zhang
IPC分类号： H01L43/12 , H01L27/22 , H01L43/02 , H01L43/10 , G01R33/04 , G01R33/00 , H01F10/26 , H01F41/04 , H01F41/20
摘要： A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.
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公开(公告)号：US10184991B2
公开(公告)日：2019-01-22
申请号：US15152002
申请日：2016-05-11
摘要： A fluxgate device that includes a first magnetic core and a second magnetic core. The first magnetic core has a first magnetized direction that deviates from a first sense direction by more than 0 degree and less than 90 degrees. The second magnetic core is arranged orthogonally to the first magnetic core. The second magnetic core has a second magnetized direction that deviates from a second sense direction by more than 0 degree and less than 90 degrees.
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公开(公告)号：US10067201B2
公开(公告)日：2018-09-04
申请号：US15099561
申请日：2016-04-14
发明人： Iouri N Mirgorodski , Roozbeh Parsa , William French , Dok Won Lee , Ann Gabrys
摘要： A magnetic sensor has a circuit segment with a quadrupole region. The quadrupole region includes a supply line, a first return line and a second return line, all in a conductor layer. The first supply line is laterally adjacent to the supply line on a first side, and the second return line is laterally adjacent to the supply line on a second, opposite side. A space between the supply line and the first return line is free of the conductor layer; similarly, a space between the supply line and the second return line is free of the conductor layer. The first return line and the second return line are electrically coupled to the supply line at a terminus of the circuit segment.
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