Invention Grant
- Patent Title: Integrated circuit with hall effect and anisotropic magnetoresistive (AMR) sensors
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Application No.: US15865825Application Date: 2018-01-09
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Publication No.: US10211255B2Publication Date: 2019-02-19
- Inventor: Dok Won Lee , William David French , Keith Ryan Green
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/06 ; H01L43/04 ; H01L43/14
Abstract:
Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
Public/Granted literature
- US20180130849A1 INTEGRATED CIRCUIT WITH HALL EFFECT AND ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS Public/Granted day:2018-05-10
Information query
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