公开(公告)号：US20100136796A1

公开(公告)日：2010-06-03

申请号：US12628800

申请日：2009-12-01

申请人： Masayuki HATANO ,  Takuya KONO ,  Yasutada NAKAGAWA ,  Yuji SASAKI

发明人： Masayuki HATANO ,  Takuya KONO ,  Yasutada NAKAGAWA ,  Yuji SASAKI

IPC分类号： H01L21/30 ,  G03B27/58

CPC分类号： G03F7/70341 ,  G03F7/707

摘要： A substrate holding member according to an embodiment includes an opening having a minimum internal diameter lager than a diameter of a space in which a substrate to be exposed on a substrate stage is disposed, wherein an inner peripheral surface of the opening has a shape expanding toward a lower surface at least partly.

摘要翻译： 根据实施例的基板保持构件包括具有最小内径的开口，该开口比设置在基板载台上要暴露的基板的空间的直径大，该开口的内周面具有朝向 至少部分地是下表面。

公开(公告)号：US20090296054A1

公开(公告)日：2009-12-03

申请号：US12473034

申请日：2009-05-27

申请人： Takuya KONO ,  Masayuki HATANO

发明人： Takuya KONO ,  Masayuki HATANO

IPC分类号： G03B27/52

CPC分类号： G03B27/52 ,  G03F7/70341 ,  G03F7/70725

摘要： An immersion lithography method includes preparing an exposure tool having an exposure stage, a projection lens having an immersion head movable on the stage and used to form an immersion region and an illumination light source provided on the projection lens via a mask, placing a to-be-exposed substrate on the stage, supplying a liquid by use of the immersion head and forming the immersion region disposed between a surface portion of the substrate and a lower end portion of the projection lens, and relatively moving the stage and projection lens while holding the immersion region and exposing a region of the substrate covered with the immersion region. A first distance between the projection lens and the substrate is kept unchanged and a second distance between the immersion head and substrate is changed according to an exposure sequence.

摘要翻译： 浸没式光刻方法包括制备具有曝光台的曝光工具，具有可在舞台上移动并用于形成浸没区域的浸没头的投影透镜和经由掩模设置在投影透镜上的照明光源， 曝光后的基板，通过浸渍头供给液体，形成设置在基板的表面部分和投影透镜的下端部之间的浸渍区域，并且保持平台和投影透镜同时保持 浸没区域并暴露被浸渍区域覆盖的基板的区域。 投影透镜和基板之间的第一距离保持不变，并且浸没头和基板之间的第二距离根据曝光顺序而改变。

公开(公告)号：US20110032501A1

公开(公告)日：2011-02-10

申请号：US12830881

申请日：2010-07-06

申请人： Kazuya FUKUHARA ,  Masayuki HATANO ,  Takuya KONO

发明人： Kazuya FUKUHARA ,  Masayuki HATANO ,  Takuya KONO

IPC分类号： G03B27/54

CPC分类号： G03F7/70525 ,  G03F7/705

摘要： In one embodiment, an exposure apparatus is configured to irradiate a mask with illumination light and to irradiate a wafer with light from the mask irradiated with the illumination light. The apparatus includes an information acquisition unit configured to acquire use history information that is information regarding a use history of the mask. The apparatus further includes a condition derivation unit configured to derive a setting value or a change amount of an optical setting condition of the exposure apparatus, based on the acquired use history information and correspondence information that indicates a correspondence between the use history of the mask and the optical setting condition of the exposure apparatus. The apparatus further includes an exposure unit configured to set the optical setting condition of the exposure apparatus to an optical setting condition specified by the derived setting value or change amount, and to expose the wafer under the set optical setting condition.

摘要翻译： 在一个实施例中，曝光装置被配置为用照明光照射掩模，并且用来自照射照明光的掩模的光照射晶片。 该装置包括：信息获取单元，被配置为获取与掩模的使用历史有关的信息的使用历史信息。 该装置还包括条件导出单元，被配置为基于所获取的使用历史信息和对应信息来导出曝光装置的光学设置条件的设定值或变化量，该对应信息指示掩模的使用历史和 曝光装置的光学设定条件。 该装置还包括：曝光单元，被配置为将曝光装置的光学设置状态设置为由导出的设定值或变化量指定的光学设定条件，并在设定的光学设定条件下使晶片曝光。

公开(公告)号：US20100304280A1

公开(公告)日：2010-12-02

申请号：US12718370

申请日：2010-03-05

申请人： Masayuki HATANO

发明人： Masayuki HATANO

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A method of manufacturing a semiconductor device using a template on which a pattern is formed beforehand is disclosed. An error between a position of the pattern formed on the template and a reference position where the pattern is to be formed is obtained. An outer shape of the template is processed in accordance with the obtained error. The error of the template is corrected by distorting the template through application of pressure to a side face of the template whose outer shape is processed. The pattern is transferred onto a transfer layer formed on a semiconductor substrate by using the template in which the error is corrected.

摘要翻译： 公开了使用预先形成图案的模板来制造半导体器件的方法。 获得在模板上形成的图案的位置与要形成图案的基准位置之间的误差。 根据获得的误差对模板的外形进行处理。 通过对外部形状的模板的侧面施加压力使模板变形来校正模板的误差。 通过使用校正了误差的模板将图案转印到形成在半导体衬底上的转印层上。

公开(公告)号：US20110097827A1

公开(公告)日：2011-04-28

申请号：US12882944

申请日：2010-09-15

申请人： Masayuki HATANO ,  Suigen Kyoh ,  Tetsuro Nakasugi

发明人： Masayuki HATANO ,  Suigen Kyoh ,  Tetsuro Nakasugi

IPC分类号： H01L21/66 ,  B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/00

摘要： In one embodiment, a pattern formation method is disclosed. The method can place a liquid resin material on a workpiece substrate. The method can press a template against the resin material and measuring distance between a lower surface of a projection of the template and an upper surface of the workpiece substrate. The template includes a pattern formation region and a circumferential region around the pattern formation region. A pattern for circuit pattern formation is formed in the pattern formation region and the projection is formed in the circumferential region. The method can form a resin pattern by curing the resin material in a state of pressing the template. In addition, the method can separate the template from the resin pattern.

摘要翻译： 在一个实施例中，公开了图案形成方法。 该方法可以将液态树脂材料放置在工件基板上。 该方法可以将模板压靠树脂材料并测量模板的突起的下表面与工件基板的上表面之间的距离。 模板包括图案形成区域和围绕图案形成区域的周边区域。 在图案形成区域中形成用于电路图案形成的图案，并且在周向区域中形成突起。 该方法可以通过在压制模板的状态下固化树脂材料来形成树脂图案。 此外，该方法可以将模板与树脂图案分离。

公开(公告)号：US20100023146A1

公开(公告)日：2010-01-28

申请号：US12497349

申请日：2009-07-02

申请人： Masayuki HATANO ,  Tetsuro NAKASUGI

发明人： Masayuki HATANO ,  Tetsuro NAKASUGI

IPC分类号： G06F19/00

CPC分类号： G05B19/41875 ,  G05B2219/31265 ,  G05B2219/32196 ,  Y02P90/22

摘要： A control method for a semiconductor manufacturing apparatus, comprising: generating, as log data, a history of operation states of the semiconductor manufacturing apparatus when a wafer is processed by the semiconductor manufacturing apparatus; specifying, based on the log data, processing results in which operation states of the semiconductor manufacturing apparatus are abnormal states out of processing results after the processing of the wafer processed by the semiconductor manufacturing apparatus as abnormal processing results; creating control data for the semiconductor manufacturing apparatus based on the processing results and the abnormal processing results; and controlling the processing by the semiconductor manufacturing apparatus using the control data.

摘要翻译： 一种半导体制造装置的控制方法，包括：当半导体制造装置处理晶片时，产生作为对数数据的半导体制造装置的工作状态的历史; 基于对数数据，指定在由半导体制造装置处理的晶片处理之后的处理结果中作为异常处理结果的半导体制造装置的操作状态为异常状态的处理结果; 基于处理结果和异常处理结果创建半导体制造装置的控制数据; 以及使用控制数据来控制半导体制造装置的处理。

公开(公告)号：US20080218715A1

公开(公告)日：2008-09-11

申请号：US12044439

申请日：2008-03-07

申请人： Masayuki HATANO ,  Shinichi Ito

发明人： Masayuki HATANO ,  Shinichi Ito

IPC分类号： G03B27/42

CPC分类号： G03F7/70358 ,  G03F7/70341 ,  G03F7/70425

摘要： An immersion exposure method is disclosed which, while causing a relative movement of an immersion area formed so as to intervene between a substrate to be exposed on an exposure stage and a projection lens to the substrate, exposes an irradiation area of the substrate covered with the immersion area. An exposure stage is moved in a first direction, thereby exposing a first exposure area of the substrate. The exposure stage is moved in a second direction opposite to the first direction, thereby exposing a second exposure area adjoining the first exposure area. In a state where the second exposure area is held inside the immersion boundary of the immersion area, the exposure stage is moved from the movement end position of the exposure stage in a first exposure moving process to the movement start position of the exposure stage in a second exposure moving process.

摘要翻译： 公开了一种浸没曝光方法，其中，使形成的浸渍区域的相对运动在曝光台上待曝光的基板和投影透镜之间介入到基板的同时，使被覆盖的基板的照射区域曝光 沉浸区域。 曝光阶段沿第一方向移动，从而暴露基板的第一曝光区域。 曝光阶段在与第一方向相反的第二方向上移动，从而暴露与第一曝光区域相邻的第二曝光区域。 在第二曝光区域保持在浸没区域的浸没边界内的状态下，曝光阶段在第一曝光移动处理中从曝光台的移动结束位置移动到曝光台的移动开始位置 第二曝光移动过程。

公开(公告)号：US20130224963A1

公开(公告)日：2013-08-29

申请号：US13599358

申请日：2012-08-30

申请人： Masayuki HATANO ,  Hiroshi TOKUE

发明人： Masayuki HATANO ,  Hiroshi TOKUE

IPC分类号： H01L21/30 ,  B05C13/00

CPC分类号： C23C16/52 ,  B82Y10/00 ,  B82Y40/00 ,  C23C16/4401 ,  G03F7/0002 ,  H01L21/6715

摘要： According to one embodiment, a semiconductor manufacturing apparatus includes a substrate stage, a transfer unit, and a control unit. A substrate is settable on the substrate stage. The transfer unit is configured to transfer a pattern having an uneven configuration onto a major surface of the substrate by attachably and removably holding a template. The pattern is provided in the transfer surface. The control unit is configured to acquire information relating to a number of foreign objects on the major surface prior to the transferring of the pattern. The control unit adds the number for a plurality of the substrates including the pattern transferred by the transfer unit. The control unit causes the transfer unit not to implement the transferring of the pattern in the case where the sum has reached the upper limit.

摘要翻译： 根据一个实施例，半导体制造装置包括基板台，转印单元和控制单元。 衬底可在衬底台上设置。 转印单元被配置为通过可附接地和可移除地保持模板将具有不均匀构造的图案转印到基板的主表面上。 转印面上设有图案。 控制单元被配置为在传送图案之前获取与主表面上的多个异物相关的信息。 控制单元添加包括由传送单元传送的图案的多个基板的数量。 在总和达到上限的情况下，控制单元使得传送单元不执行图案的传送。

公开(公告)号：US20120244719A1

公开(公告)日：2012-09-27

申请号：US13402244

申请日：2012-02-22

申请人： Masayuki HATANO ,  Takumi OTA ,  Yohko FURUTONO

发明人： Masayuki HATANO ,  Takumi OTA ,  Yohko FURUTONO

IPC分类号： H01L21/304 ,  B29C59/02 ,  B29C47/76

CPC分类号： G03F7/002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： In an imprint method according to one embodiment, a template on which a template pattern is formed is pushed against resist on a substrate to be transferred while the resist is cured in this state. The template is subsequently separated from the cured resist. The template is then degassed from the template pattern surface side between after the template is separated from the cured resist and till the template is pushed against resist at the next shot.

摘要翻译： 在根据一个实施例的压印方法中，在该状态下，在抗蚀剂固化的同时，将其上形成有模板图案的模板压在要转印的基板上的抗蚀剂上。 随后将模板与固化的抗蚀剂分离。 然后在模板与固化的抗蚀剂分离之后，直到模板在下一次照射下被抵抗抗蚀剂时，模板从模板图案表面侧脱气。