公开(公告)号：US08366259B2

公开(公告)日：2013-02-05

申请号：US13443042

申请日：2012-04-10

申请人： Takamichi Fujii ,  Takayuki Naono ,  Takami Arakawa

发明人： Takamichi Fujii ,  Takayuki Naono ,  Takami Arakawa

IPC分类号： B41J2/17

CPC分类号： B41J2/155 ,  B41J2/14233 ,  C23C14/0036 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/3471 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01J37/3444 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T428/31504

摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

摘要翻译： 当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位 被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

公开(公告)号：US08075105B2

公开(公告)日：2011-12-13

申请号：US12560131

申请日：2009-09-15

申请人： Yoshikazu Hishinuma ,  Takamichi Fujii ,  Takayuki Naono ,  Yuuichi Okamoto ,  Ryosuke Ozawa

发明人： Yoshikazu Hishinuma ,  Takamichi Fujii ,  Takayuki Naono ,  Yuuichi Okamoto ,  Ryosuke Ozawa

IPC分类号： B41J2/045 ,  C04B35/495 ,  C04B35/00 ,  H01L41/18 ,  H01L41/187

CPC分类号： B41J2/14233 ,  B41J2202/03 ,  C23C14/025 ,  C23C14/083 ,  C23C14/5806 ,  G01N21/65 ,  H01L41/1876 ,  H01L41/29 ,  H01L41/316

摘要： Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.

摘要翻译： 本发明提供一种具有钙钛矿型晶体结构并含有铅作为主要成分的钙钛矿型氧化物膜，其在表面上的多个点进行拉曼显微光谱检测，以便在施加电流时测量拉曼光谱 100kV / cm的电场，施加无电场时，具有2.2cm -1以下的峰值偏移量的绝对值的平均值，峰值偏移量在500〜650nm范围内的拉曼光谱之间发现 在施加100kV / cm的电场时测量的cm -1，并且在施加无电场时测量的在500至650cm -1范围内的拉曼光谱。 还提供了这种膜的制造方法和评价方法以及使用这种膜的装置。

公开(公告)号：US20110121096A1

公开(公告)日：2011-05-26

申请号：US13000408

申请日：2009-07-27

申请人： Yasukazu Nihei ,  Takamichi Fujii ,  Yuuichi Okamoto ,  Takami Arakawa ,  Takayuki Naono

发明人： Yasukazu Nihei ,  Takamichi Fujii ,  Yuuichi Okamoto ,  Takami Arakawa ,  Takayuki Naono

IPC分类号： B05B1/08 ,  H01L41/22 ,  H01L41/18 ,  H01L41/04

CPC分类号： B41J2/161 ,  B41J2/1646 ,  C04B35/49 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1875 ,  H01L41/316 ,  Y10T29/42

摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3  (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.

摘要翻译： 一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜 在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素 ，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。

公开(公告)号：US20100206718A1

公开(公告)日：2010-08-19

申请号：US12389253

申请日：2009-02-19

申请人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshi Hishinuma

发明人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshi Hishinuma

IPC分类号： C23C14/34

CPC分类号： C23C14/35 ,  C23C14/088 ,  C23C14/345 ,  H01J37/32651 ,  H01J37/3408 ,  H01J37/3444

摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

摘要翻译： 一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑 衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

公开(公告)号：US08540851B2

公开(公告)日：2013-09-24

申请号：US12389253

申请日：2009-02-19

申请人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshikazu Hishinuma

发明人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshikazu Hishinuma

IPC分类号： C23C14/34 ,  C23C14/56

CPC分类号： C23C14/35 ,  C23C14/088 ,  C23C14/345 ,  H01J37/32651 ,  H01J37/3408 ,  H01J37/3444

摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

摘要翻译： 一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑 衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

公开(公告)号：US08172372B2

公开(公告)日：2012-05-08

申请号：US12618324

申请日：2009-11-13

申请人： Takamichi Fujii ,  Takayuki Naono ,  Takami Arakawa

发明人： Takamichi Fujii ,  Takayuki Naono ,  Takami Arakawa

IPC分类号： B41J2/045 ,  C23C14/34

CPC分类号： B41J2/155 ,  B41J2/14233 ,  C23C14/0036 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/3471 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01J37/3444 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T428/31504

摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

摘要翻译： 当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位 被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

公开(公告)号：US08047636B2

公开(公告)日：2011-11-01

申请号：US12461463

申请日：2009-08-12

申请人： Takamichi Fujii ,  Takayuki Naono

发明人： Takamichi Fujii ,  Takayuki Naono

IPC分类号： B41J2/045 ,  C23C14/00

CPC分类号： C23C14/34 ,  B41J2/1612 ,  B41J2/1642 ,  B41J2/1646 ,  C23C14/088 ,  H01J37/34 ,  H01J37/3438 ,  H01L41/0973 ,  H01L41/316 ,  Y10T428/31

摘要： A film depositing apparatus comprises: a process chamber; a target holder provided in the process chamber for holding a target; a substrate holder for supporting a deposition substrate such that the deposition substrate faces the target holder in the process chamber; a power supply for supplying electric power between the target holder and the substrate holder to generate plasma in the process chamber; and an anode provided between the target holder and the substrate holder for capturing ions and/or electrons in the plasma being generated within the process chamber, wherein the anode includes: a cylindrical member provided so as to surround an outer periphery of a side of the substrate holder that faces the target holder; and at least one annular plate member attached to an inside wall of the cylindrical member, the plate member having a central opening larger than a surface of the deposition substrate.

摘要翻译： 一种成膜设备包括：处理室; 设置在处理室中的用于保持目标的目标支架; 衬底保持器，用于支撑沉积衬底，使得沉积衬底面对处理室中的靶保持器; 用于在所述目标保持器和所述基板保持器之间提供电力以在所述处理室中产生等离子体的电源; 以及阳极，其设置在所述靶保持器和所述基板保持器之间，用于捕获所述处理室内产生的等离子体中的离子和/或电子，其中所述阳极包括：圆柱形构件，设置成围绕所述处理室的一侧的外周 面对目标支架的基板支架; 以及至少一个连接到所述圆柱形构件的内壁的环形板构件，所述板构件具有大于所述沉积衬底的表面的中心开口。

公开(公告)号：US20100206714A1

公开(公告)日：2010-08-19

申请号：US12389241

申请日：2009-02-19

申请人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshi Hishinuma

发明人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshi Hishinuma

IPC分类号： C23C14/34

CPC分类号： C23C14/345 ,  H01J37/3408 ,  H01J37/3438 ,  H01J37/3444

摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.

摘要翻译： 一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位 物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。

公开(公告)号：US08672456B2

公开(公告)日：2014-03-18

申请号：US13168302

申请日：2011-06-24

申请人： Takami Arakawa ,  Takayuki Naono ,  Takamichi Fujii

发明人： Takami Arakawa ,  Takayuki Naono ,  Takamichi Fujii

IPC分类号： B41J2/045

CPC分类号： H01L41/1876 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/493 ,  C04B2235/3255 ,  C04B2235/3298 ,  C04B2235/768 ,  C04B2235/79 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/316

摘要： A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTi1-c)1-dBd]Oe,  (P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a

摘要翻译： 压电膜具有由多个柱状晶体构成的柱状晶体结构，并含有下述式（P）表示的钙钛矿氧化物作为主要成分：PbaAb [（ZrcTi1-c）1-dBd] Oe，（P） 其中Pb和A是A位元素，A是选自Bi，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb中的至少一种元素 ，Lu，Ca，Sr和Ba; Zr，Ti和B是B位元素，B是选自Nb，Ta和Sb中的至少一种元素; a是铅的量，b是元素A的量，c是Zr / Ti比，d是元素B的量，e是氧的量; a，b和d的值满足<1，a + b> = 1和0

公开(公告)号：US08641173B2

公开(公告)日：2014-02-04

申请号：US12656737

申请日：2010-02-16

申请人： Takayuki Naono ,  Yoshiki Morita ,  Yoshikazu Hishinuma ,  Takamichi Fujii

发明人： Takayuki Naono ,  Yoshiki Morita ,  Yoshikazu Hishinuma ,  Takamichi Fujii

IPC分类号： B41J2/045 ,  H01L41/22

CPC分类号： H01L41/316 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1642 ,  B41J2/1646 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876

摘要： A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d31 greater than 150 pC/N and a breakdown voltage of 80 V or more, which is defined by an applied voltage that results in a current value of 1 μA or more.

摘要翻译： 本发明的压电膜的表面粗糙度值PV为170.0nm以下，由膜表面上的最大高度（峰值P）与最小高度（谷值V）之间的差定义， 压电常数d31大于150pC / N，击穿电压为80V或更高，其由施加的电压定义，导致电流值为1μA或更大。