Abstract:
A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.
Abstract:
A charged particle beam writing method includes irradiating a shot of a charged particle beam, and deflecting the charged particle beam of the shot using a plurality of deflectors arranged on an optical path of the charged particle beam to write a pattern on a target object, wherein any one of the plurality of deflectors controls deflection of a charged particle beam of a shot different from a shot which is controlled in deflection by another deflector in the same period.
Abstract:
A method for resizing a pattern to be written by using lithography technique includes calculating a first dimension correction amount of a pattern for correcting a dimension error caused by a loading effect, for each small region made by virtually dividing a writing region of a target workpiece into meshes of a predetermined size, based on an area density of the each small region, calculating a second dimension correction amount in accordance with a line width dimension of the pattern to be written in the each small region, correcting the first dimension correction amount by using the second dimension correction amount, and resizing the line width dimension of the pattern by using a corrected first dimension correction amount, and outputting a result of the resizing.
Abstract:
According to one embodiment, a memory system includes: a nonvolatile semiconductor memory including a plurality of normal blocks and at least one dummy block, each of the normal blocks being a unit of data erasing; a writing control unit that rewrites the dummy block the number of times equal to or larger than a maximum number of times among the numbers of times of rewriting of the normal blocks; a monitor unit that monitors a data erasing time or a data writing time of the dummy block; and a wear-leveling control unit that averages the numbers of times of rewriting of the normal blocks. The memory system determines, based on a monitor result of the monitor unit, possibility of continuation of the rewriting of the normal blocks.
Abstract:
A magnetic resonance imaging apparatus comprises static magnetic field generating means for generating a static magnetic field in an imaging space, a gradient magnetic field generating means for generating a gradient magnetic field in the imaging space, high-frequency magnetic field generating means for generating a high-frequency magnetic field so as to induce nuclear magnetic resonance in a subject placed in the imaging space, signal receiving means for detecting a nuclear magnetic resonance signal from the subject, signal processing means for reconstructing an image by using the detected nuclear magnetic resonance signal, display means for displaying the image, a table for placing the subject thereon to dispose the subject in the imaging means, and table moving means for moving the table on which the subject is placed.While moving the portions to be imaged of the subject continuously or stepwise in the imaging space and disposing the subject, a whole-body image of a large region of the subject is created.The magnetic resonance imaging apparatus further comprises means for detecting information on the displacement of the subject from a desired position and setting means for setting movement information on the table according to the displacement information.The table moving means moves the table according to the movement information set by the setting means to capture the whole-body image.
Abstract:
A plasma display panel (PDP) and a method of manufacturing the same suppresses variation in the height of the intersecting barrier walls with a simple method and that prevents cross talk from occurring between the discharge cells. A concave part is formed at a position contacting an intersecting part of a first barrier wall before baking and a second barrier wall before baking orthogonal to the first barrier wall before baking. When such concave part is formed, the values of the surface area per volume of the intersecting part and the surface area per volume of the first barrier wall before baking and the second barrier wall before baking between the intersecting part and the intersecting part adjacent to the intersecting part become substantially equal. As a result, the height of the intersecting part does not become high after baking, a barrier wall of aligned height is obtained, and cross talk does not occur between the discharge cells.
Abstract:
A double container includes an outer layer body constituting an outer shell; an inner layer body including an upper opening communicating with a containing space, accommodated in the outer layer body, and deformable to undergo volume reduction; an inside plug including a tubular wall extending toward the containing space, a spherical body serving as a valve body being disposed inside the tubular wall; and a dispensing plug fitted to a mouth portion of the outer layer body and including a dispensing tube connected to the tubular wall. The tubular wall includes an inclined wall having a diameter decreasing toward the containing space and configured to abut against the spherical body over an entire circumference and including a protruding wall protruding from the inclined wall to the containing space. The protruding wall includes a liquid holding member holding a pool of liquid medium of the content formed below the spherical body.
Abstract:
A pattern forming apparatus using lithography technique includes a stage configured to allow a target object to be placed thereon; a plurality of columns configured to form patterns on the target object by using a charged particle beam while moving relatively to the stage; a pattern forming rule setting unit configured to set a pattern forming rule depending on a position of broken one of the plurality of columns; a region setting unit configured to set regions so that unbroken ones of the plurality of columns respectively form a pattern in one of the regions; a plurality of control circuits each configured to control any one of the plurality of columns different from others of the plurality of columns controlled by others of the plurality of control circuits; and a pattern forming data processing unit configured to perform a converting process on pattern forming data for the regions set to output a corresponding data generated by the converting process to the control circuit of a corresponding one of the unbroken ones of the plurality of columns respectively.
Abstract:
A charged particle beam writing apparatus includes an irradiation part configured to irradiate a charged particle beam; a first shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the charged particle beam; a deflection part configured to deflect the charged particle beam that has passed through the first shaping aperture member; a second shaping aperture member having passing areas, that the charged particle beam passes through, on both sides of an area blocking the deflected charged particle beam; and a stage on which a target workpiece irradiated with the charged particle beam that has passed through the second shaping aperture member is placed.
Abstract:
The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.