公开(公告)号：US4399035A

公开(公告)日：1983-08-16

申请号：US276366

申请日：1981-06-15

Applicant: Takashi Nohmi ,  Takao Yamada

Inventor： Takashi Nohmi ,  Takao Yamada

IPC: C08J9/28 ,  B01D69/12 ,  B01D71/34 ,  B01D71/80 ,  C08J5/18 ,  D01D5/24 ,  F23C99/00 ,  B01D31/00

CPC classification number: B01D71/34 ,  B01D61/145 ,  B01D61/147 ,  B01D61/18 ,  B01D69/082 ,  D01D5/24

Abstract: A screen type hollow filament microfilter made of a polyvinylidene fluoride type resin and having a layer structure of two kinds of layers with the support layer and the internal and external skin layers having an easily-controllable and wide average effective pore diameter of 0.05 to 1.0 .mu.m, characterized by having a high selectivity in permeation, a high permeability, a high porosity, an excellent mechanical strength and an excellent chemical resistance and an excellent inertness to living bodies. The microfilter, which has a number of excellent performances, can be produced by extruding a spinning solution comprising a polyvinylidene fluoride type resin, a solvent therefor and at least one kind of surfactant from an annular hollow filament spinning orifice and coagulating the extrudate by using coagulating liquids.

Abstract translation: PCT No.PCT / JP80 / 00102 Sec。 371日期：1981年6月15日 102（e）日期1981年6月15日PCT提交1980年5月13日PCT公布。 公开号WO81 / 00969 日期：1981年04月16日。一种由聚偏二氟乙烯类树脂制成的屏幕型中空丝微滤片，其具有两层的层状结构，其中支撑层和内外皮层具有容易控制和广泛的平均有效 孔径为0.05〜1.0μm，其特征在于具有高的渗透选择性，高渗透性，高孔隙率，优异的机械强度和优异的耐化学性和对生物体的极好的惰性。 具有许多优异性能的微过滤器可以通过将环状中空丝纺丝孔挤出包含聚偏二氟乙烯类树脂及其溶剂的纺丝溶液和至少一种表面活性剂，并通过使用凝结物 液体。

公开(公告)号：US4229297A

公开(公告)日：1980-10-21

申请号：US2028

申请日：1979-01-09

Applicant: Takashi Nohmi ,  Takao Yamada ,  Yoshinao Doi

Inventor： Takashi Nohmi ,  Takao Yamada ,  Yoshinao Doi

IPC: B01D37/00 ,  B01D61/14 ,  B01D67/00 ,  B01D69/02 ,  B01D71/26 ,  C10G31/11 ,  C10G33/06 ,  C10M175/00 ,  C11B3/16

CPC classification number: C10G31/11 ,  B01D17/085 ,  B01D67/0027 ,  B01D67/003 ,  B01D69/02 ,  Y10S210/05

Abstract: A specific porous membrane is found to be extremely useful for permeation-separation of an oil from an oil-containing emulsion. By contacting a stable oil-containing emulsion of either water-in-oil type or oil-in-water type with the surface of a specific porous membrane having at its surface a critical surface tension of less than 35 dynes/cm to not less than 20 dynes/cm and having an average pore diameter of 0.03 .mu.m to 5 .mu.m, a pore radius distribution of not more than 1.5 and a porosity of 1 to 85%, only the oil can be permeation-separated, without permeation of the liquid immiscible with the oil, with high selectivity and high oil permeation.

Abstract translation: 发现特定的多孔膜对于从含油乳液中渗透分离油非常有用。 通过将油包水型或水包油型稳定的含油乳液与其表面上具有小于35达因/厘米的临界表面张力的特定多孔膜表面接触，使其不小于 20达因/厘米，平均孔径为0.03微米至5μm，孔半径分布不大于1.5，孔隙率为1至85％，只有油渗透分离，不渗透 液体与油不混溶，具有高选择性和高油渗透性。

公开(公告)号：US09093356B2

公开(公告)日：2015-07-28

申请号：US13336667

申请日：2011-12-23

Applicant: Nobuhiko Ubahara ,  Kouichiroh Deguchi ,  Takao Yamada

Inventor： Nobuhiko Ubahara ,  Kouichiroh Deguchi ,  Takao Yamada

IPC: H01L33/20 ,  H01L27/15 ,  H01L33/00 ,  H01L33/08 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L27/156 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L2224/48463

Abstract: A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.

Abstract translation: 半导体发光元件包括依次层叠的包括p型半导体层，有源层和n型半导体层的半导体层叠体; 以及与半导体层叠体的p型半导体层侧接合的导电性支撑基板。 通过穿透p型半导体层，有源层和n型半导体层的沟槽将半导体层叠体分成至少两个半导体区域。

公开(公告)号：US20120161184A1

公开(公告)日：2012-06-28

申请号：US13338128

申请日：2011-12-27

Applicant: Nobuhiro Ubahara ,  Kouichiroh Deguchi ,  Takao Yamada

Inventor： Nobuhiro Ubahara ,  Kouichiroh Deguchi ,  Takao Yamada

IPC: H01L33/50

CPC classification number: H01L27/156 ,  H01L33/405 ,  H01L33/50 ,  H01L33/505 ,  H01L33/508 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.

Abstract translation: 半导体发光器件包括半导体发光元件，该半导体发光元件包括依次层叠的p型半导体层，有源层和n型半导体层的半导体层叠体和与p型半导体连接的导电性支撑基板 半导体层叠体的层侧。 半导体层叠体通过沟槽分成至少两个半导体区域。 半导体发光器件还包括覆盖半导体发光元件的至少一部分的第一透明密封树脂，第一透明密封树脂包括多个第一荧光颗粒，每个第一荧光颗粒具有单独的平均粒径。 沟槽的宽度小于第一荧光颗粒的各个平均粒径的总平均值。

公开(公告)号：US07205220B2

公开(公告)日：2007-04-17

申请号：US11198465

申请日：2005-08-08

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L21/3205

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。

公开(公告)号：US07042830B2

公开(公告)日：2006-05-09

申请号：US10192246

申请日：2002-07-09

Applicant: Michiaki Shinotsuka ,  Hiroyuki Iwasa ,  Takao Yamada ,  Toshio Matsushita ,  Yasuo Kanbara ,  Shigeki Okauchi

Inventor： Michiaki Shinotsuka ,  Hiroyuki Iwasa ,  Takao Yamada ,  Toshio Matsushita ,  Yasuo Kanbara ,  Shigeki Okauchi

IPC: G11B7/24

CPC classification number: G11B7/257 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B2007/25706 ,  G11B2007/2571 ,  G11B2007/25713 ,  G11B2007/25715

Abstract: The present invention relates to a phase-change optical information recording medium comprising a recording layer which reversibly phase-changes between the crystalline phase and the amorphous phase by irradiation of a light having a recording wavelength of 390 to 430 nm, and a light transmittance thermally controllable layer showing a light transmittance varying according to temperature, in which the light transmittance increases at a rate of 0.2 to 0.7% /10° C.

公开(公告)号：US06904003B2

公开(公告)日：2005-06-07

申请号：US10059356

申请日：2002-01-31

Applicant: Masahiko Miyashita ,  Nobuo Ohyama ,  Takao Yamada ,  Hiroyasu Eguchi

Inventor： Masahiko Miyashita ,  Nobuo Ohyama ,  Takao Yamada ,  Hiroyasu Eguchi

IPC: G11B20/12 ,  G11B7/004 ,  G11B19/02 ,  G11B27/02 ,  G11B27/032 ,  G11B27/034 ,  G11B27/10 ,  G11B27/11 ,  G11B27/32 ,  G11B27/34 ,  G11B17/22

CPC classification number: G11B27/34 ,  G11B19/02 ,  G11B27/034 ,  G11B27/105 ,  G11B27/11 ,  G11B2220/2545 ,  G11B2220/2562 ,  G11B2220/65

Abstract: An information reproducing apparatus is provided, which has a new cue point setting function with excellent operability for enabling new application form. Specifically, a cue point for specifying a start position for playing back a disc, and additional information or disc identification information corresponding to the cue point are stored in a backup memory. The additional information or the disc identification information is associated with the cue point and shown on a display according to a proper operation of operation buttons and a turning member. When the operation buttons and the turning member are properly operated, a system controller edits and adds the additional information, or edits the disc identification information in the backup memory. When the operation buttons and the turning member are properly operated to enter retrieval information, information stored in the backup memory is compared and retrieved, and the retrieved information associated with a cue point is shown on the display.

Abstract translation: 提供了一种信息再现装置，其具有新的提示点设置功能，具有优异的可操作性，以实现新的应用形式。 特别地，用于指定用于播放盘的开始位置的提示点以及与提示点相对应的附加信息或盘识别信息被存储在备份存储器中。 根据操作按钮和转动构件的适当操作，附加信息或盘识别信息与提示点相关联并显示在显示器上。 当操作按钮和转动构件被正确地操作时，系统控制器编辑并添加附加信息，或者将盘识别信息编辑在备用存储器中。 当操作按钮和转动构件被正确地操作以输入检索信息时，比较和检索存储在备用存储器中的信息，并且在显示器上显示与提示点相关联的检索信息。

公开(公告)号：US20050100323A1

公开(公告)日：2005-05-12

申请号：US10950684

申请日：2004-09-28

Applicant: Masahiko Miyashita ,  Takao Yamada ,  Nobuo Ohyama ,  Yoshitaka Nojima

Inventor： Masahiko Miyashita ,  Takao Yamada ,  Nobuo Ohyama ,  Yoshitaka Nojima

IPC: H04N5/93 ,  G11B20/10 ,  G11B27/00 ,  G11B27/10 ,  H04N5/783 ,  H04N5/85 ,  H04N9/804 ,  H04N5/781

CPC classification number: H04N5/783 ,  G11B27/005 ,  G11B27/105 ,  G11B2220/2529 ,  G11B2220/2545 ,  G11B2220/2562 ,  H04N5/85 ,  H04N9/8042

Abstract: A signal processor comprises: a first buffer memory for outputting an image signal after storage; a second buffer memory for outputting an audio signal after storage; and a playback control section. The play back control section variably adjusts the playback progress speed of at least one of the image signal and the audio signal by individually controlling the output timings of the image signal and the audio signal from the first and second buffer memories in response to a given command.

Abstract translation: 信号处理器包括：第一缓冲存储器，用于在存储之后输出图像信号; 用于在存储之后输出音频信号的第二缓冲存储器; 和播放控制部。 回放控制部分通过响应于给定的命令单独地控制来自第一和第二缓冲存储器的图像信号和音频信号的输出定时来可变地调整图像信号和音频信号中的至少一个的播放进度速度 。

公开(公告)号：US06838259B2

公开(公告)日：2005-01-04

申请号：US10168050

申请日：2000-12-14

Applicant: Masato Suenaga ,  Takao Yamada ,  Osamu Nishimura

Inventor： Masato Suenaga ,  Takao Yamada ,  Osamu Nishimura

IPC: C07K5/083 ,  C07K14/47 ,  C12N1/21 ,  C12N15/12 ,  C12N15/62 ,  C12P21/02 ,  C12P21/06 ,  C07K19/00

CPC classification number: C12P21/02 ,  C07K5/081 ,  C07K14/4703 ,  C07K2319/00 ,  C07K2319/75 ,  C12N15/62 ,  C12P21/06

Abstract: A KiSS-1 peptide or a salt thereof can be produced in a large scale by subjecting a fusion protein or peptide in which a KiSS-1 peptide is ligated to the N-terminal of a protein or peptide having cysteine at the N-terminal, to the reaction of cleaving the peptide bond on the amino acid side of the cysteine residue.

Abstract translation: 可以通过使连接有KiSS-1肽的融合蛋白或肽与N-半胱氨酸的蛋白质或N-肽的N-末端进行连接而大规模制备KiSS-1肽或其盐， 涉及切割半胱氨酸残基的氨基酸侧上的肽键的反应。

公开(公告)号：US06610995B2

公开(公告)日：2003-08-26

申请号：US10292583

申请日：2002-11-13

Applicant: Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

Inventor： Shuji Nakamura ,  Takao Yamada ,  Masayuki Senoh ,  Motokazu Yamada ,  Kanji Bando

IPC: H01L2972

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L31/1884 ,  H01L33/32 ,  H01L33/325 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05582 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  H01L2933/0016 ,  Y02E10/50 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Abstract translation: 基于氮化镓的III-V族化合物半导体器件具有设置在衬底上的氮化镓基III-V族化合物半导体层和与半导体层接触的欧姆电极。 欧姆电极由金属材料形成，并被退火。