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公开(公告)号：US20240270565A1
公开(公告)日：2024-08-15
申请号：US18642889
申请日：2024-04-23
发明人： Kuei-Sung Chang , Shang-Ying Tsai , Wei-Jhih Mao
CPC分类号： B81B3/0054 , B81C1/0019 , B81B2203/0163 , B81C2201/0125 , B81C2201/0132
摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure comprising a spring structure. A first substrate underlies a second substrate. The first and second substrates at least partially define a cavity. A microelectromechanical systems (MEMS) component is arranged in the cavity. The spring structure is disposed between a region of the second substrate and the MEMS component. The spring structure comprises a first layer and a second layer. The first layer continuously extends along a first vertical surface of the second layer.
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公开(公告)号：US11993510B2
公开(公告)日：2024-05-28
申请号：US17840936
申请日：2022-06-15
发明人： Kuei-Sung Chang , Shang-Ying Tsai , Wei-Jhih Mao
CPC分类号： B81B3/0054 , B81C1/0019 , B81B2203/0163 , B81C2201/0125 , B81C2201/0132
摘要： Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.
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公开(公告)号：US20230257256A1
公开(公告)日：2023-08-17
申请号：US17690768
申请日：2022-03-09
发明人： Wei-Jhih Mao , Shang-Ying Tsai , Kuei-Sung Chang , Chun-Wen Cheng
CPC分类号： B81B3/0051 , B81B7/0016 , B81B2207/03
摘要： Various embodiments of the present disclosure are directed towards an integrated chip (IC) including a substrate. A plurality of adhesive structures is disposed on the substrate. A microelectromechanical systems (MEMS) structure is disposed on the adhesive structures. The MEMS structure comprises a movable element disposed within a cavity. A first plurality of stopper bumps is disposed between the movable element and the substrate.
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公开(公告)号：US20240162183A1
公开(公告)日：2024-05-16
申请号：US18422220
申请日：2024-01-25
发明人： Wei-Jhih Mao , Kuei-Sung Chang , Shang-Ying Tsai
IPC分类号： H01L23/00 , H01L21/48 , H01L23/10 , H01L23/498 , H01L25/00 , H01L25/065
CPC分类号： H01L24/32 , H01L21/4803 , H01L21/4853 , H01L23/10 , H01L23/49838 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/33 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L24/05 , H01L2224/05554 , H01L2224/1403 , H01L2224/1601 , H01L2224/16014 , H01L2224/16145 , H01L2224/16227 , H01L2224/1703 , H01L2224/17106 , H01L2224/17107 , H01L2224/26155 , H01L2224/32145 , H01L2224/32227 , H01L2224/3303 , H01L2224/33181 , H01L2224/48105 , H01L2224/48145 , H01L2224/48227 , H01L2224/73104 , H01L2224/73207 , H01L2224/73257 , H01L2224/81191 , H01L2224/81192 , H01L2224/819 , H01L2224/83191 , H01L2224/83192 , H01L2224/9211 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06568 , H01L2225/06582
摘要： In some embodiments, the present disclosure relates to an integrated chip including a substrate and a first die disposed over the substrate. A first plurality of die stopper bumps are disposed along a backside of the first die. The first plurality of die stopper bumps directly contact the backside of the first die, and the first plurality of die stopper bumps are arranged as a plurality of groups of die stopper bumps. A plurality of adhesive structures are also present. Each of the plurality of adhesive structures surrounds a corresponding group of the plurality of groups of die stopper bumps.
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公开(公告)号：US20230382720A1
公开(公告)日：2023-11-30
申请号：US18446740
申请日：2023-08-09
CPC分类号： B81B7/0058 , B81C1/00333 , B81B2203/0307
摘要： Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) package comprising a wire-bond damper. A housing structure overlies a support substrate, and a MEMS structure is between the support substrate and the housing structure. The MEMS structure comprises an anchor, a spring, and a movable mass. The spring extends from the anchor to the movable mass to suspend and allow movement of the movable mass in a cavity between the support substrate and the housing structure. The wire-bond damper is on the movable mass or structure surrounding the movable mass. For example, the wire-bond damper may be on a top surface of the movable mass. As another example, the wire-bond damper may be on the support substrate, laterally between the anchor and the movable mass. Further, the wire-bond damper comprises a wire formed by wire bonding and configured to dampen shock to the movable mass.
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公开(公告)号：US20220306454A1
公开(公告)日：2022-09-29
申请号：US17840936
申请日：2022-06-15
发明人： Kuei-Sung Chang , Shang-Ying Tsai , Wei-Jhih Mao
摘要： Various embodiments of the present disclosure are directed towards a microelectromechanical systems (MEMS) structure including a composite spring. A first substrate underlies a second substrate. A third substrate overlies the second substrate. The first, second, and third substrates at least partially define a cavity. The second substrate comprises a moveable mass in the cavity and between the first and third substrates. The composite spring extends from a peripheral region of the second substrate to the moveable mass. The composite spring is configured to suspend the moveable mass in the cavity. The composite spring includes a first spring layer comprising a first crystal orientation, and a second spring layer comprising a second crystal orientation different than the first crystal orientation.
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公开(公告)号：US20240021567A1
公开(公告)日：2024-01-18
申请号：US18366179
申请日：2023-08-07
发明人： Wei-Jhih Mao , Kuei-Sung Chang , Shang-Ying Tsai
IPC分类号： H01L23/00 , H01L21/48 , H01L23/10 , H01L23/498 , H01L25/065 , H01L25/00
CPC分类号： H01L24/32 , H01L21/4803 , H01L21/4853 , H01L23/10 , H01L23/49838 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/33 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L24/05 , H01L2224/05554 , H01L2224/1403 , H01L2224/1601 , H01L2224/16014 , H01L2224/16145 , H01L2224/16227 , H01L2224/1703 , H01L2224/17106 , H01L2224/17107 , H01L2224/26155 , H01L2224/32145 , H01L2224/32227 , H01L2224/3303 , H01L2224/33181 , H01L2224/48105 , H01L2224/48145 , H01L2224/48227 , H01L2224/73104 , H01L2224/73207 , H01L2224/73257 , H01L2224/81191 , H01L2224/81192 , H01L2224/819 , H01L2224/83191 , H01L2224/83192 , H01L2224/9211 , H01L2224/92247 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06568 , H01L2225/06582
摘要： In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.
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公开(公告)号：US11661333B2
公开(公告)日：2023-05-30
申请号：US17070341
申请日：2020-10-14
发明人： Wei-Jhih Mao , Shang-Ying Tsai , Kuei-Sung Chang , Chun-Wen Cheng
CPC分类号： B81B3/0021 , B81C1/00166 , B81C1/00825 , B81B2201/0228 , B81B2201/0292 , B81B2201/038 , B81B2203/04
摘要： A semiconductor structure includes a substrate; a sensing device disposed over the substrate and including a plurality of protruding members protruded from the sensing device; a sensing structure disposed adjacent to the sensing device and including a plurality of sensing electrodes protruded from the sensing structure towards the sensing device; and an actuating structure disposed adjacent to the sensing device and configured to provide an electrostatic force on the sensing device based on a feedback from the sensing structure. Further, a method of manufacturing the semiconductor structure is also disclosed.
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