公开(公告)号：US20140213152A1

公开(公告)日：2014-07-31

申请号：US13836439

申请日：2013-03-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Huai-Tei Yang ,  Ying-Lang Wang

IPC: B24B9/06 ,  B24B21/00 ,  B24B21/08

CPC classification number: B24B9/065 ,  B24B21/004 ,  B24B21/04

Abstract: A wafer edge trimming tool includes an abrasive tape and a holding module configured to hold the abrasive tape against portions of an edge of a rotating wafer during a wafer edge trimming process.

Abstract translation: 晶片边缘修剪工具包括研磨带和保持模块，其被配置为在晶片边缘修剪过程期间将研磨带保持在旋转晶片的边缘的一部分上。

公开(公告)号：US20210391208A1

公开(公告)日：2021-12-16

申请号：US16902203

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Chi-Hsiang Shen ,  Ting-Hsun Chang ,  Li-Chieh Wu ,  Hung Yen ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09G1/02 ,  C09K3/14

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

公开(公告)号：US20200043786A1

公开(公告)日：2020-02-06

申请号：US16450665

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Tang-Kuei Chang ,  Chia Hsuan Lee ,  Jian-Ci Lin

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/532 ,  H01L23/535 ,  C09G1/04

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.

公开(公告)号：US09931726B2

公开(公告)日：2018-04-03

申请号：US13836439

申请日：2013-03-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Huai-Tei Yang ,  Ying-Lang Wang

IPC: B24B9/06 ,  B24B21/00 ,  B24B21/04

CPC classification number: B24B9/065 ,  B24B21/004 ,  B24B21/04

Abstract: A wafer edge trimming tool includes an abrasive tape and a holding module configured to hold the abrasive tape against portions of an edge of a rotating wafer during a wafer edge trimming process.

公开(公告)号：US20210391186A1

公开(公告)日：2021-12-16

申请号：US16902180

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/10 ,  C09G1/02

Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

公开(公告)号：US10957587B2

公开(公告)日：2021-03-23

申请号：US16450665

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Tang-Kuei Chang ,  Chia Hsuan Lee ,  Jian-Ci Lin

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/321 ,  C09G1/04 ,  H01L23/532 ,  H01L23/535

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.

公开(公告)号：US11658065B2

公开(公告)日：2023-05-23

申请号：US16902203

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Chi-Hsiang Shen ,  Ting-Hsun Chang ,  Li-Chieh Wu ,  Hung Yen ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09K3/14 ,  C09G1/02 ,  H01L21/321

CPC classification number: H01L21/7684 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1481 ,  H01L21/3212 ,  H01L21/76877

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

公开(公告)号：US11508585B2

公开(公告)日：2022-11-22

申请号：US16902180

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  C09G1/02 ,  B24B37/10 ,  B24B37/04

Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

公开(公告)号：US11211289B2

公开(公告)日：2021-12-28

申请号：US16556360

申请日：2019-08-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78 ,  H01L23/485 ,  H01L21/3115 ,  H01L23/532

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

公开(公告)号：US20190385909A1

公开(公告)日：2019-12-19

申请号：US16556360

申请日：2019-08-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.