公开(公告)号：US10957587B2

公开(公告)日：2021-03-23

申请号：US16450665

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Tang-Kuei Chang ,  Chia Hsuan Lee ,  Jian-Ci Lin

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/321 ,  C09G1/04 ,  H01L23/532 ,  H01L23/535

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.

公开(公告)号：US10937691B2

公开(公告)日：2021-03-02

申请号：US16559336

申请日：2019-09-03

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/3105 ,  C09G1/02

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

公开(公告)号：US20200043786A1

公开(公告)日：2020-02-06

申请号：US16450665

申请日：2019-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Tang-Kuei Chang ,  Chia Hsuan Lee ,  Jian-Ci Lin

IPC: H01L21/768 ,  H01L21/321 ,  H01L23/532 ,  H01L23/535 ,  C09G1/04

Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a conductive feature over a semiconductor substrate and forming a dielectric layer over the conductive feature. The method also includes forming an opening in the dielectric layer to expose the conductive feature. The method further includes forming a conductive material to overfill the opening. In addition, the method includes thinning the conductive material using a chemical mechanical polishing process. A slurry used in the chemical mechanical polishing process includes an iron-containing oxidizer that oxidizes a portion of the conductive material.

公开(公告)号：US11211289B2

公开(公告)日：2021-12-28

申请号：US16556360

申请日：2019-08-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L29/78 ,  H01L23/485 ,  H01L21/3115 ,  H01L23/532

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

公开(公告)号：US20190385909A1

公开(公告)日：2019-12-19

申请号：US16556360

申请日：2019-08-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Li-Chieh Wu ,  Tang-Kuei Chang ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Su-Hao Liu ,  Kuo-Ju Chen ,  Liang-Yin Chen ,  Huicheng Chang ,  Ting-Kui Chang ,  Chia Hsuan Lee

IPC: H01L21/768 ,  H01L23/522

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.