公开(公告)号：US10325964B2

公开(公告)日：2019-06-18

申请号：US15352172

申请日：2016-11-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Huan Chen ,  Fu-Jier Fan ,  Kong-Beng Thei ,  Ker-Hsiao Huo ,  Li-Hsuan Yeh ,  Yu-Bin Zhao

IPC分类号： H01L29/08 ,  H01L27/32 ,  H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L29/49

摘要： The present disclosure relates to an organic light emitting device including a logic device that comprises a dummy pattern and a merged spacer, and an associated fabrication method. In some embodiments, the organic light emitting device is disposed over a substrate. The logic device is coupled to the organic light emitting device, and comprises a pair of source/drain regions disposed within the substrate and separated by a channel region. A gate structure overlies the channel region and comprises a gate electrode and a dummy pattern separated from the gate electrode by a merged spacer. By arranging the dummy pattern and the merged spacer between the gate electrode and the source/drain regions, a distance between the gate electrode and the source/drain region is enlarged, and therefore reducing the gate induced drain leakage (GIDL) effect.

公开(公告)号：US20180138250A1

公开(公告)日：2018-05-17

申请号：US15352172

申请日：2016-11-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yi-Huan Chen ,  Fu-Jier Fan ,  Kong-Beng Thei ,  Ker-Hsiao Huo ,  Li-Hsuan Yeh ,  Yu-Bin Zhao

IPC分类号： H01L27/32 ,  H01L29/49 ,  H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L51/56 ,  H01L21/28 ,  H01L21/311

CPC分类号： H01L27/3223 ,  H01L27/3225 ,  H01L27/3262 ,  H01L29/41775 ,  H01L29/4983 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78

摘要： The present disclosure relates to an organic light emitting device including a logic device that comprises a dummy pattern and a merged spacer, and an associated fabrication method. In some embodiments, the organic light emitting device is disposed over a substrate. The logic device is coupled to the organic light emitting device, and comprises a pair of source/drain regions disposed within the substrate and separated by a channel region. A gate structure overlies the channel region and comprises a gate electrode and a dummy pattern separated from the gate electrode by a merged spacer. By arranging the dummy pattern and the merged spacer between the gate electrode and the source/drain regions, a distance between the gate electrode and the source/drain region is enlarged, and therefore reducing the gate induced drain leakage (GIDL) effect.

公开(公告)号：US10164037B2

公开(公告)日：2018-12-25

申请号：US15475294

申请日：2017-03-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ker-Hsiao Huo ,  Kong-Beng Thei ,  Chih-Wen Albert Yao ,  Fu-Jier Fan ,  Chen-Liang Chu ,  Ta-Yuan Kung ,  Yi-Huan Chen ,  Yu-Bin Zhao ,  Ming-Ta Lei ,  Li-Hsuan Yeh

IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L29/40 ,  H01L29/06 ,  H01L29/08

摘要： A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a top surface, a source region, and a drain region. The semiconductor device structure includes a gate structure over the top surface and extending into the semiconductor substrate. The gate structure in the semiconductor substrate is between the source region and the drain region and separates the source region from the drain region. The semiconductor device structure includes an isolation structure in the semiconductor substrate and surrounding the source region, the drain region, and the gate structure in the semiconductor substrate.

公开(公告)号：US09577078B1

公开(公告)日：2017-02-21

申请号：US14994718

申请日：2016-01-13

申请人： Taiwan Semiconductor Manufacturing Co., Ltd. ,  National Chiao Tung University

发明人： Steve S. Chung ,  E-Ray Hsieh ,  Yu-Bin Zhao ,  Samuel C. Pan

IPC分类号： H01L29/78 ,  H01L29/02 ,  H01L21/336 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L29/66977 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545 ,  H01L29/66651 ,  H01L29/66659 ,  H01L29/7391

摘要： Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure in a semiconductor substrate. The semiconductor device structure also includes a channel layer over the semiconductor substrate. A first portion of the channel layer covers a portion of the source structure. A second portion of the channel layer laterally extends away from the source structure. The semiconductor device structure further includes a drain structure over the semiconductor substrate. The drain structure and the source structure have different conductivity types. The drain structure adjoins the second portion of the channel layer.

摘要翻译： 提供半导体器件结构的结构和形成方法。 半导体器件结构包括半导体衬底中的源极结构。 半导体器件结构还包括半导体衬底上的沟道层。 沟道层的第一部分覆盖源结构的一部分。 沟道层的第二部分横向延伸远离源结构。 半导体器件结构还包括半导体衬底上的漏极结构。 漏极结构和源极结构具有不同的导电类型。 漏极结构邻接沟道层的第二部分。