公开(公告)号：US20210210354A1

公开(公告)日：2021-07-08

申请号：US17206740

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yin Wang ,  Hung-Ju Chou ,  Jiun-Ming Kuo ,  Wei-Ken Lin ,  Chun Te Li

IPC: H01L21/3105 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/08

Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further incudes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.

公开(公告)号：US11735430B2

公开(公告)日：2023-08-22

申请号：US17206740

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yin Wang ,  Hung-Ju Chou ,  Jiun-Ming Kuo ,  Wei-Ken Lin ,  Chun Te Li

IPC: H01L21/3105 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/08

CPC classification number: H01L21/3105 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/31051 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/7851 ,  H01L29/7853 ,  H01L21/31053 ,  H01L21/823842

Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further incudes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.