公开(公告)号：US20210020772A1

公开(公告)日：2021-01-21

申请号：US17063206

申请日：2020-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Ken Lin ,  Chun Te Li ,  Chih-Peng Hsu

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/321 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

公开(公告)号：US11735430B2

公开(公告)日：2023-08-22

申请号：US17206740

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yin Wang ,  Hung-Ju Chou ,  Jiun-Ming Kuo ,  Wei-Ken Lin ,  Chun Te Li

IPC: H01L21/3105 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/08

CPC classification number: H01L21/3105 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/31051 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/7851 ,  H01L29/7853 ,  H01L21/31053 ,  H01L21/823842

Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further incudes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.

公开(公告)号：US11450772B2

公开(公告)日：2022-09-20

申请号：US17063206

申请日：2020-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Ken Lin ,  Chun Te Li ,  Chih-Peng Hsu

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/321 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

公开(公告)号：US20210210354A1

公开(公告)日：2021-07-08

申请号：US17206740

申请日：2021-03-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yin Wang ,  Hung-Ju Chou ,  Jiun-Ming Kuo ,  Wei-Ken Lin ,  Chun Te Li

IPC: H01L21/3105 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/08

Abstract: A method includes forming a semiconductor capping layer over a first fin in a first region of a substrate, forming a dielectric layer over the semiconductor capping layer, and forming an insulation material over the dielectric layer, an upper surface of the insulation material extending further away from the substrate than an upper surface of the first fin. The method further incudes recessing the insulation material to expose a top portion of the first fin, and forming a gate structure over the top portion of the first fin.