公开(公告)号：US09776216B2

公开(公告)日：2017-10-03

申请号：US14092533

申请日：2013-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Weibo Yu ,  Kuo-Sheng Chuang ,  Wen-Yu Ku ,  Chin-Hsiang Lin

IPC: B08B3/02 ,  B08B17/02 ,  H01L21/67 ,  B05B15/02

CPC classification number: B08B3/02 ,  B05B15/555 ,  B08B17/025 ,  H01L21/67051

Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

公开(公告)号：US20150147826A1

公开(公告)日：2015-05-28

申请号：US14091630

申请日：2013-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Weibo Yu ,  Wen-Yu Ku ,  Kuo-Sheng Chuang ,  Chin-Hsiang Lin

IPC: H01L21/66 ,  G01N21/21 ,  H01L21/677 ,  H01L21/02 ,  H01L21/306 ,  G01B11/06 ,  H01L21/67

CPC classification number: H01L21/30604 ,  G01B11/0641 ,  G01N2201/025 ,  G01N2201/061 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20

Abstract: An integrated system operation method is disclosed that includes the following steps: the film of a substrate is measured by a metrology apparatus to obtain a film information. The substrate is moved from the metrology apparatus to a process apparatus adjacent to the transfer apparatus. The film information is sent to the process apparatus. A film treatment is applied to the substrate in accordance with the film information.

Abstract translation: 公开了一种集成系统操作方法，其包括以下步骤：通过计量装置测量基板的膜以获得胶片信息。 基板从计量装置移动到与传送装置相邻的处理装置。 电影信息被发送到处理装置。 根据胶片信息对基材进行胶片处理。

公开(公告)号：US12053745B2

公开(公告)日：2024-08-06

申请号：US16569489

申请日：2019-09-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Yu Kuo ,  Shang-Yun Huang ,  Weibo Yu ,  Shang-Yuan Yu

IPC: B01F23/10 ,  B01J8/00 ,  H01L21/67

CPC classification number: B01F23/19 ,  B01J8/0035 ,  H01L21/67023 ,  H01L21/67075

Abstract: Chemical liquid is injected into a tank. A concentration of a first gas dissolved in the chemical liquid is detected. Based on the detected concentration of the first gas, at least one of the first gas and a second gas is injected into the tank to sustain at least one of the concentration of the first gas and a concentration of the second gas in a range of a target value.

公开(公告)号：US10276469B2

公开(公告)日：2019-04-30

申请号：US14689210

申请日：2015-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Weibo Yu ,  Jui-Ping Chuang ,  Chen-Hsiang Lu ,  Shao-Yen Ku

IPC: H01L21/311 ,  H01L21/302 ,  H01L23/31 ,  H01L21/02 ,  H01L21/677

Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.

公开(公告)号：US09704714B2

公开(公告)日：2017-07-11

申请号：US14688191

申请日：2015-04-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Weibo Yu ,  Jui-Ping Chuang ,  Chen-Hsiang Lu ,  Shao-Yen Ku

IPC: H01L21/66 ,  H01L21/263 ,  H05F3/06 ,  H05F3/04 ,  H01L21/67 ,  H01J37/00 ,  H01L21/677

CPC classification number: H01L21/263 ,  H01J37/00 ,  H01L21/67017 ,  H01L21/67207 ,  H01L21/67733 ,  H01L21/67736 ,  H01L22/14 ,  H01L22/20 ,  H05F3/04 ,  H05F3/06

Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.