公开(公告)号：US09991154B2

公开(公告)日：2018-06-05

申请号：US15054113

申请日：2016-02-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei Ken Lin ,  Jia-Ming Lin ,  Hsien-Che Teng ,  Yung-Chou Shih ,  Kun-Dian She ,  Lichia Yang ,  Yun-Wen Chu

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02236 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L29/66795 ,  H01L29/7848

摘要： A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.

公开(公告)号：US20170250106A1

公开(公告)日：2017-08-31

申请号：US15054113

申请日：2016-02-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei Ken Lin ,  Jia-Ming Lin ,  Hsien-Che Teng ,  Yung-Chou Shih ,  Kun-Dian She ,  Lichia Yang ,  Yun-Wen Chu

IPC分类号： H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L21/76224 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02236 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L29/66795 ,  H01L29/7848

摘要： A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.

公开(公告)号：US09691766B1

公开(公告)日：2017-06-27

申请号：US15088117

申请日：2016-04-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jia-Ming Lin ,  Chun Che Lin ,  Shiu-Ko JangJian ,  Wei Ken Lin ,  Kuang Yao Lo

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3115 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L27/0886 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803

摘要： A fin field effect transistor (FinFET) including a substrate, a plurality of insulators, and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insulators are disposed in the trenches and include doped regions distributed therein. The gate stack partially covers the at least one semiconductor fin and the insulators. A method for fabricating the aforesaid FinFET is also discussed.