公开(公告)号：US08975153B2

公开(公告)日：2015-03-10

申请号：US13866102

申请日：2013-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-I Yang ,  Hong-Seng Shue ,  Kun-Ming Huang ,  Tzu-Cheng Chen ,  Ming-Che Yang ,  Po-Tao Chu

IPC: H01L21/02 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66

CPC classification number: H01L29/7802 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/8238 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/092 ,  H01L29/0634

Abstract: A method for forming a semiconductor device includes forming a hard mask layer over a substrate comprising a semiconductor material of a first conductivity type, and forming a plurality of trenches in the hard mask layer and extending into the substrate. Each trench has at least one side wall and a bottom wall. The method further includes forming at least one barrier insulator layer along the at least one side wall and over the bottom wall of each trench, removing the at least one barrier insulator layer over the bottom wall of each trench, and filling the plurality of trenches with a semiconductor material of a second conductivity type.

Abstract translation: 一种形成半导体器件的方法包括在包括第一导电类型的半导体材料的衬底上形成硬掩模层，并且在硬掩模层中形成并延伸到衬底中的多个沟槽。 每个沟槽具有至少一个侧壁和底壁。 该方法还包括沿着每个沟槽的至少一个侧壁和底壁上形成至少一个阻挡绝缘体层，在每个沟槽的底壁上去除至少一个阻挡绝缘体层，并且将多个沟槽填充到 第二导电类型的半导体材料。

公开(公告)号：US20140264559A1

公开(公告)日：2014-09-18

申请号：US13866102

申请日：2013-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-I Yang ,  Hong-Seng Shue ,  Kun-Ming Huang ,  Tzu-Cheng Chen ,  Ming-Che Yang ,  Po-Tao Chu

IPC: H01L29/78 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/7802 ,  H01L21/823425 ,  H01L21/823481 ,  H01L21/8238 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/092 ,  H01L29/0634

Abstract: A method for forming a semiconductor device includes forming a hard mask layer over a substrate comprising a semiconductor material of a first conductivity type, and forming a plurality of trenches in the hard mask layer and extending into the substrate. Each trench has at least one side wall and a bottom wall. The method further includes forming at least one barrier insulator layer along the at least one side wall and over the bottom wall of each trench, removing the at least one barrier insulator layer over the bottom wall of each trench, and filling the plurality of trenches with a semiconductor material of a second conductivity type.

Abstract translation: 一种形成半导体器件的方法包括在包括第一导电类型的半导体材料的衬底上形成硬掩模层，并且在硬掩模层中形成并延伸到衬底中的多个沟槽。 每个沟槽具有至少一个侧壁和底壁。 该方法还包括沿着每个沟槽的至少一个侧壁和底壁上形成至少一个阻挡绝缘体层，在每个沟槽的底壁上去除至少一个阻挡绝缘体层，并且将多个沟槽填充到 第二导电类型的半导体材料。