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公开(公告)号：US20190066820A1
公开(公告)日：2019-02-28
申请号：US15690303
申请日：2017-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Yu Wang , Ching-Huang Wang , Chun-Jung Lin , Tien-Wei Chiang , Meng-Chun Shih , Kuei-Hung Shen
Abstract: The disclosure is related a method for testing a magnetic memory device and a test apparatus are provided. In some exemplary embodiments, the method includes at least the following steps. The magnetic memory device is initialized by applying a first magnetic field to force write a first data to the magnetic memory device. Then, a second magnetic field is applied to the magnetic memory device. Second data may be obtained from the magnetic memory device by performing a chip probing process. Accordingly, performance of the magnetic memory device may be determined based on the second data.
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公开(公告)号：US09852785B2
公开(公告)日：2017-12-26
申请号：US15166342
申请日：2016-05-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Der Chih , Yun-Sheng Chen , Chun-Jung Lin
IPC: G11C11/22
CPC classification number: G11C11/2275 , G11C11/223 , G11C11/2273
Abstract: A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed.
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公开(公告)号：US09412721B2
公开(公告)日：2016-08-09
申请号：US14280732
申请日：2014-05-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ping-Lin Yang , Jun-De Jin , Fu-Lung Hsueh , Sa-Lly Liu , Tong-Chern Ong , Chun-Jung Lin , Ya-Chen Kao
IPC: H01F5/00 , H01L25/065 , H01F27/28 , H01F41/04 , H01L23/522 , H01L23/48
CPC classification number: H01L25/0657 , H01F5/00 , H01F27/2804 , H01F41/046 , H01F2027/2809 , H01L23/48 , H01L23/5227 , H01L2225/06531 , H01L2924/0002 , Y10T29/4902 , H01L2924/00
Abstract: A communications structure comprises a first semiconductor substrate having a first coil, and a second semiconductor substrate having a second coil above the first semiconductor substrate. Inner edges of the first and second coils define a boundary of a volume that extends below the first coil and above the second coil. A ferromagnetic core is positioned at least partially within the boundary, such that a mutual inductance is provided between the first and second coils for wireless transmission of signals or power between the first and second coils.
Abstract translation: 通信结构包括具有第一线圈的第一半导体衬底和在第一半导体衬底上方具有第二线圈的第二半导体衬底。 第一和第二线圈的内边缘限定在第一线圈下方延伸并在第二线圈之上的体积的边界。 铁磁芯至少部分地位于边界内，使得在第一和第二线圈之间提供互感以在第一和第二线圈之间无线地传输信号或电力。
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公开(公告)号：US10665321B2
公开(公告)日：2020-05-26
申请号：US15690303
申请日：2017-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chia-Yu Wang , Ching-Huang Wang , Chun-Jung Lin , Tien-Wei Chiang , Meng-Chun Shih , Kuei-Hung Shen
Abstract: The disclosure is related a method for testing a magnetic memory device and a test apparatus are provided. In some exemplary embodiments, the method includes at least the following steps. The magnetic memory device is initialized by applying a first magnetic field to force write a first data to the magnetic memory device. Then, a second magnetic field is applied to the magnetic memory device. Second data may be obtained from the magnetic memory device by performing a chip probing process. Accordingly, performance of the magnetic memory device may be determined based on the second data.
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