公开(公告)号：US09852785B2

公开(公告)日：2017-12-26

申请号：US15166342

申请日：2016-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Der Chih ,  Yun-Sheng Chen ,  Chun-Jung Lin

IPC: G11C11/22

CPC classification number: G11C11/2275 ,  G11C11/223 ,  G11C11/2273

Abstract: A method includes applying a first voltage to a first source line of a memory, applying a second voltage to a second source line of the memory, turning on an access transistor of a memory cell of the memory, and performing one of a write operation or a read operation on a metal-ferroelectric-semiconductor (MFS) transistor of the memory cell. Memories on which the method is performed are also disclosed.