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公开(公告)号:US20190066820A1
公开(公告)日:2019-02-28
申请号:US15690303
申请日:2017-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chia-Yu Wang , Ching-Huang Wang , Chun-Jung Lin , Tien-Wei Chiang , Meng-Chun Shih , Kuei-Hung Shen
Abstract: The disclosure is related a method for testing a magnetic memory device and a test apparatus are provided. In some exemplary embodiments, the method includes at least the following steps. The magnetic memory device is initialized by applying a first magnetic field to force write a first data to the magnetic memory device. Then, a second magnetic field is applied to the magnetic memory device. Second data may be obtained from the magnetic memory device by performing a chip probing process. Accordingly, performance of the magnetic memory device may be determined based on the second data.
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公开(公告)号:US10665321B2
公开(公告)日:2020-05-26
申请号:US15690303
申请日:2017-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chia-Yu Wang , Ching-Huang Wang , Chun-Jung Lin , Tien-Wei Chiang , Meng-Chun Shih , Kuei-Hung Shen
Abstract: The disclosure is related a method for testing a magnetic memory device and a test apparatus are provided. In some exemplary embodiments, the method includes at least the following steps. The magnetic memory device is initialized by applying a first magnetic field to force write a first data to the magnetic memory device. Then, a second magnetic field is applied to the magnetic memory device. Second data may be obtained from the magnetic memory device by performing a chip probing process. Accordingly, performance of the magnetic memory device may be determined based on the second data.
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