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公开(公告)号：US11990167B2
公开(公告)日：2024-05-21
申请号：US17352658
申请日：2021-06-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Bo-Jhih Shen , Kuang-I Liu , Joung-Wei Liou , Jinn-Kwei Liang , Yi-Wei Chiu , Chin-Hsing Lin , Li-Te Hsu , Han-Ting Tsai , Cheng-Yi Wu , Shih-Ho Lin
CPC classification number: G11C11/161 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85 , G01R33/098 , G11B5/3909 , G11C2211/5615
Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
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公开(公告)号：US11227747B2
公开(公告)日：2022-01-18
申请号：US16657503
申请日：2019-10-18
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yu-Chi Lin , Yi-Wei Chiu , Hung-Jui Chang , Chin-Hsing Lin , Yu Lun Ke
IPC: H01J37/32 , H01L21/683 , H01L21/3065 , H01L21/311
Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.
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Patent Agency Ranking
公开(公告)号：US20210312965A1
公开(公告)日：2021-10-07
申请号：US17352658
申请日：2021-06-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Bo-Jhih Shen , Kuang-I Liu , Joung-Wei Liou , Jinn-Kwei Liang , Yi-Wei Chiu , Chin-Hsing Lin , Li-Te Hsu , Han-Ting Tsai , Cheng-Yi Wu , Shih-Ho Lin
Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
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公开(公告)号：US20240021230A1
公开(公告)日：2024-01-18
申请号：US18366779
申请日：2023-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Bo-Jhih Shen , Kuang-I Liu , Joung-Wei Liou , Jinn-Kwei Liang , Yi-Wei Chiu , Chin-Hsing Lin , Li-Te Hsu , Han-Ting Tsai , Cheng-Yi Wu , Shih-Ho Lin
CPC classification number: G11C11/161 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85 , G11C2211/5615 , G11B5/3909
Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
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公开(公告)号：US10529543B2
公开(公告)日：2020-01-07
申请号：US16038825
申请日：2018-07-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Chi Lin , Yi-Wei Chiu , Hung Jui Chang , Chin-Hsing Lin , Yu Lun Ke
IPC: H01L21/3065 , H01J37/32 , H01L21/683 , H01L21/311
Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.
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公开(公告)号：US12154608B2
公开(公告)日：2024-11-26
申请号：US18366779
申请日：2023-08-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Bo-Jhih Shen , Kuang-I Liu , Joung-Wei Liou , Jinn-Kwei Liang , Yi-Wei Chiu , Chin-Hsing Lin , Li-Te Hsu , Han-Ting Tsai , Cheng-Yi Wu , Shih-Ho Lin
Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.
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公开(公告)号：US20190148116A1
公开(公告)日：2019-05-16
申请号：US16038825
申请日：2018-07-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Chi LIN , Yi-Wei Chiu , Hung Jui Chang , Chin-Hsing Lin , Yu Lun Ke
IPC: H01J37/32 , H01L21/683 , H01L21/3065
Abstract: The present disclosure describes an exemplary etch process in a reactor that includes a shower head and an electrostatic chuck configured to receive a radio frequency (RF) power. The shower head includes a top plate and a bottom plate with one or more gas channels that receive incoming gases. The method can include (i) rotating the top plate or the bottom plate of the shower head to a first position to allow a gas to flow through the shower head; (ii) performing a surface modification cycle that includes: applying a negative direct current (DC) bias voltage to the shower head, applying an RF power signal to the wafer chuck; and (iii) performing an etching cycle that includes: removing the negative DC bias voltage from the shower head and lowering the RF power signal applied to the wafer chuck.
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