公开(公告)号：US20170110551A1

公开(公告)日：2017-04-20

申请号：US15169566

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi LEE ,  Cheng-Yen TSAI ,  Da-Yuan LEE

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/78 ,  H01L29/51 ,  H01L21/285 ,  H01L21/28 ,  H01L21/67

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28556 ,  H01L21/67167 ,  H01L27/0886 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.

公开(公告)号：US20170110552A1

公开(公告)日：2017-04-20

申请号：US15178150

申请日：2016-06-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi LEE ,  Cheng-Yen TSAI ,  Da-Yuan LEE

IPC: H01L29/49 ,  H01L29/51 ,  H01L27/088 ,  H01L21/67 ,  H01L21/28 ,  H01L21/285

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67167 ,  H01L27/0886 ,  H01L29/517 ,  H01L29/518

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.

公开(公告)号：US20200161443A1

公开(公告)日：2020-05-21

申请号：US16751128

申请日：2020-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi LEE ,  Cheng-Yen TSAI ,  Da-Yuan LEE

IPC: H01L29/49 ,  H01L29/51 ,  H01L21/67 ,  H01L27/088 ,  H01L21/285 ,  H01L21/28

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.

公开(公告)号：US20180261678A1

公开(公告)日：2018-09-13

申请号：US15978546

申请日：2018-05-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi LEE ,  Cheng-Yen TSAI ,  Da-Yuan LEE

IPC: H01L29/49 ,  H01L21/285 ,  H01L21/28 ,  H01L21/67 ,  H01L27/088 ,  H01L29/51

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67167 ,  H01L27/0886 ,  H01L29/517 ,  H01L29/518

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. The work-function metal layer has a first thickness. A pre-treatment process of the work-function metal layer may then performed, where the pre-treatment process removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. The treated work-function metal layer has a second thickness less than the first thickness. In various embodiments, after performing the pre-treatment process, another metal layer is deposited over the treated work-function metal layer.

公开(公告)号：US20180061957A1

公开(公告)日：2018-03-01

申请号：US15790739

申请日：2017-10-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Yi LEE ,  Cheng-Yen TSAI ,  Da-Yuan LEE

IPC: H01L29/49 ,  H01L29/78 ,  H01L27/088 ,  H01L29/51 ,  H01L21/28 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28556 ,  H01L21/67167 ,  H01L27/0886 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/78

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate and a work-function metal layer is deposited over the gate dielectric layer. Thereafter, a fluorine-based treatment of the work-function metal layer is performed, where the fluorine-based treatment removes an oxidized layer from a top surface of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited over the treated work-function metal layer.

公开(公告)号：US20170110324A1

公开(公告)日：2017-04-20

申请号：US15192570

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yen TSAI ,  Hsin-Yi LEE ,  Chung-Chiang WU ,  Da-Yuan LEE ,  Weng CHANG ,  Ming-Hsing TSAI

IPC: H01L21/28 ,  C23C16/455

CPC classification number: H01L21/28105 ,  C23C14/58 ,  C23C14/5846 ,  C23C14/5873 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/02697 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/76838 ,  H01L21/76886

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

公开(公告)号：US20180261459A1

公开(公告)日：2018-09-13

申请号：US15979938

申请日：2018-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yen TSAI ,  Hsin-Yi LEE ,  Chung-Chiang WU ,  Da-Yuan LEE ,  Weng CHANG ,  Ming-Hsing TSAI

IPC: H01L21/28 ,  H01L21/768 ,  H01L21/02 ,  C23C14/58 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01L21/28105 ,  C23C14/58 ,  C23C14/5846 ,  C23C14/5873 ,  C23C16/02 ,  C23C16/06 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/02697 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/76838 ,  H01L21/76886 ,  H01L29/4966 ,  H01L29/66795

Abstract: A system for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

公开(公告)号：US20180090431A1

公开(公告)日：2018-03-29

申请号：US15817281

申请日：2017-11-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Chiang WU ,  Chia-Ching LEE ,  Hsueh-Wen TSAU ,  Chun-Yuan CHOU ,  Cheng-Yen TSAI ,  Da-Yuan LEE ,  Ming-Hsing TSAI

IPC: H01L23/528 ,  H01L29/49 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76861 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/53261 ,  H01L29/4966

Abstract: A semiconductor structure includes a substrate, a dielectric layer, a metal layer, and a tungsten layer. The dielectric layer is on the substrate and has a recess feature therein. The metal layer is in the recess feature. The metal layer has an oxygen content less than about 0.1 atomic percent. The tungsten layer is in the recess feature and in contact with the metal layer.

公开(公告)号：US20170330829A1

公开(公告)日：2017-11-16

申请号：US15154989

申请日：2016-05-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chung-Chiang WU ,  Chia-Ching LEE ,  Hsueh-Wen TSAU ,  Chun-Yuan CHOU ,  Cheng-Yen TSAI ,  Da-Yuan LEE ,  Ming-Hsing TSAI

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/311 ,  H01L21/768 ,  H01L29/49

CPC classification number: H01L23/528 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76861 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53228 ,  H01L23/53257 ,  H01L23/53261 ,  H01L29/4966

Abstract: A semiconductor structure and the method of forming the same are provided. The method of forming a semiconductor structure includes forming a recess feature in a basal layer, forming a metal layer on the basal layer, exposing the metal layer to a tungsten halide gas to form an oxygen-deficient metal layer, and forming a bulk tungsten layer on the oxygen-deficient metal layer.