公开(公告)号：US20190288084A1

公开(公告)日：2019-09-19

申请号：US15920866

申请日：2018-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ricky WANG ,  Chao-Cheng CHEN ,  Jr-Jung LIN ,  Chi-Wei YANG

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/3213

Abstract: Semiconductor device structures comprising a gate structure having different profiles at different portions of the gate structure are provided. In some examples, a semiconductor device includes a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.

公开(公告)号：US20190043763A1

公开(公告)日：2019-02-07

申请号：US15670401

申请日：2017-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Cheng LI ,  Chien-Hao CHEN ,  Yung-Cheng LU ,  Jr-Jung LIN ,  Chun-Hung LEE ,  Chao-Cheng CHEN

IPC: H01L21/8238 ,  H01L21/28 ,  H01L27/108 ,  H01L29/66 ,  H01L27/092

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first amorphous layer over a substrate. The substrate has a base portion and a first fin portion over the base portion, and the first amorphous layer covers the first fin portion. The method includes annealing the first amorphous layer to crystallize the first amorphous layer into a first polycrystalline layer. The method includes forming a second amorphous layer over the first polycrystalline layer. The method includes removing a first portion of the second amorphous layer and a second portion of the first polycrystalline layer under the first portion. The remaining second amorphous layer and the remaining first polycrystalline layer together form a first gate structure over and across the first fin portion.