公开(公告)号：US20190288084A1

公开(公告)日：2019-09-19

申请号：US15920866

申请日：2018-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ricky WANG ,  Chao-Cheng CHEN ,  Jr-Jung LIN ,  Chi-Wei YANG

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/3213

Abstract: Semiconductor device structures comprising a gate structure having different profiles at different portions of the gate structure are provided. In some examples, a semiconductor device includes a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.