CERAMIC SEMICONDUCTOR PACKAGE SEAL RINGS

    公开(公告)号:US20220384369A1

    公开(公告)日:2022-12-01

    申请号:US17335010

    申请日:2021-05-31

    Abstract: In examples, a semiconductor package comprises a ceramic substrate and first and second metal layers covered by the ceramic substrate. The first metal layer is configured to carry signals at least in a 20 GHz to 28 GHz frequency range. The package comprises a semiconductor die positioned above the first and second metal layers and coupled to the first metal layer. The package comprises a ground shield positioned in a horizontal plane between the semiconductor die and the first metal layer, the ground shield including an orifice above a portion of the first metal layer. The package includes a metal seal ring coupled to a top surface of the ceramic substrate, the metal seal ring having a segment that is vertically aligned with a segment of the ground shield. The segment of the ground shield is between the orifice of the ground shield and a horizontal center of the ground shield. The package comprises a metal lid coupled to a top surface of the metal seal ring.

    PLATED METAL LAYER IN POWER PACKAGES

    公开(公告)号:US20220181241A1

    公开(公告)日:2022-06-09

    申请号:US17334491

    申请日:2021-05-28

    Abstract: In some examples, a semiconductor package comprises a multi-layer package substrate. The multi-layer package substrate includes first and second metal layers, the first metal layer positioned above the second metal layer and coupled to the second metal layer by way of a via. The substrate also includes a dielectric covering at least part of the first and second metal layers and the via. The package includes a plated metal layer plated on at least part of the first metal layer and positioned above the dielectric, a combination of the first metal layer and the plated metal layer being thicker than the second metal layer. The package includes a semiconductor die having a device side, the device side vertically aligned with and coupled to the plated metal layer.

    CERAMIC SEMICONDUCTOR PACKAGE SEAL RINGS
    7.
    发明公开

    公开(公告)号:US20230197642A1

    公开(公告)日:2023-06-22

    申请号:US18172208

    申请日:2023-02-21

    CPC classification number: H01L23/585 H01L23/564 H01L23/562 H01L23/552

    Abstract: In examples, a semiconductor package comprises a ceramic substrate and first and second metal layers covered by the ceramic substrate. The first metal layer is configured to carry signals at least in a 20 GHz to 28 GHz frequency range. The package comprises a semiconductor die positioned above the first and second metal layers and coupled to the first metal layer. The package comprises a ground shield positioned in a horizontal plane between the semiconductor die and the first metal layer, the ground shield including an orifice above a portion of the first metal layer. The package includes a metal seal ring coupled to a top surface of the ceramic substrate, the metal seal ring having a segment that is vertically aligned with a segment of the ground shield. The segment of the ground shield is between the orifice of the ground shield and a horizontal center of the ground shield. The package comprises a metal lid coupled to a top surface of the metal seal ring.

    ANTENNA-ON-PACKAGE SYSTEM
    8.
    发明申请

    公开(公告)号:US20230131441A1

    公开(公告)日:2023-04-27

    申请号:US17741560

    申请日:2022-05-11

    Abstract: One example includes an antenna-on-package (AoP) system. The system includes a first transmission line patterned on a first metal layer. The first metal layer can be arranged to be coupled on a printed circuit board (PCB). The system also includes an antenna portion patterned on a second metal layer. The first and second metal layers can be separated by at least one dielectric layer. The system further includes a coaxial transition portion comprising a via configured to communicatively couple the first transmission line on the first metal layer to a second transmission line on the second metal layer. The second transmission line can be coupled to the antenna portion.

    BUILD-UP FILM AND PRE-PREG SUBSTRATES IN ISOLATION PACKAGES

    公开(公告)号:US20250167125A1

    公开(公告)日:2025-05-22

    申请号:US18920738

    申请日:2024-10-18

    Abstract: In examples, a semiconductor package includes a substrate including a build-up film isolation layer and first and second pre-preg layers contacting opposing lateral sides of the build-up film isolation layer, the first pre-preg layer including a first metallization, and the second pre-preg layer including a second metallization not in physical contact with the first metallization. The package also includes solder mask layers on top and bottom surfaces of the substrate, a first semiconductor die coupled to the first metallization, and a second semiconductor die coupled to the second metallization, the first and second semiconductor dies configured to operate in separate voltage domains. The package also includes a mold compound covering the substrate and the first and second semiconductor dies.

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