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公开(公告)号:US20230035716A1
公开(公告)日:2023-02-02
申请号:US17387794
申请日:2021-07-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Yiqi TANG , Rajen Manicon MURUGAN , Li JIANG
IPC: H01L23/498 , H01L23/13 , H01P3/02 , H05K1/02
Abstract: In examples, a semiconductor package comprises a ceramic substrate and a horizontal metal layer covered by the ceramic substrate. The metal layer is configured to carry signals in the 5 GHz to 38 GHz frequency range. The package also includes a vertical castellation on an outer surface of the ceramic substrate, the castellation coupled to the metal layer and having a height ranging from 0.10 mm to 0.65 mm.
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公开(公告)号:US20220384369A1
公开(公告)日:2022-12-01
申请号:US17335010
申请日:2021-05-31
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Yiqi TANG , Li JIANG , Rajen Manicon MURUGAN
IPC: H01L23/58 , H01L23/552 , H01L23/00
Abstract: In examples, a semiconductor package comprises a ceramic substrate and first and second metal layers covered by the ceramic substrate. The first metal layer is configured to carry signals at least in a 20 GHz to 28 GHz frequency range. The package comprises a semiconductor die positioned above the first and second metal layers and coupled to the first metal layer. The package comprises a ground shield positioned in a horizontal plane between the semiconductor die and the first metal layer, the ground shield including an orifice above a portion of the first metal layer. The package includes a metal seal ring coupled to a top surface of the ceramic substrate, the metal seal ring having a segment that is vertically aligned with a segment of the ground shield. The segment of the ground shield is between the orifice of the ground shield and a horizontal center of the ground shield. The package comprises a metal lid coupled to a top surface of the metal seal ring.
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公开(公告)号:US20230197642A1
公开(公告)日:2023-06-22
申请号:US18172208
申请日:2023-02-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Yiqi TANG , Li JIANG , Rajen Manicon MURUGAN
IPC: H01L23/58 , H01L23/00 , H01L23/552
CPC classification number: H01L23/585 , H01L23/564 , H01L23/562 , H01L23/552
Abstract: In examples, a semiconductor package comprises a ceramic substrate and first and second metal layers covered by the ceramic substrate. The first metal layer is configured to carry signals at least in a 20 GHz to 28 GHz frequency range. The package comprises a semiconductor die positioned above the first and second metal layers and coupled to the first metal layer. The package comprises a ground shield positioned in a horizontal plane between the semiconductor die and the first metal layer, the ground shield including an orifice above a portion of the first metal layer. The package includes a metal seal ring coupled to a top surface of the ceramic substrate, the metal seal ring having a segment that is vertically aligned with a segment of the ground shield. The segment of the ground shield is between the orifice of the ground shield and a horizontal center of the ground shield. The package comprises a metal lid coupled to a top surface of the metal seal ring.
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