公开(公告)号：US20250167125A1

公开(公告)日：2025-05-22

申请号：US18920738

申请日：2024-10-18

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sylvester ANKAMAH-KUSI ,  Guangxu LI ,  Rajen Manicon MURUGAN ,  Usman CHAUDHRY

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/14 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065

Abstract: In examples, a semiconductor package includes a substrate including a build-up film isolation layer and first and second pre-preg layers contacting opposing lateral sides of the build-up film isolation layer, the first pre-preg layer including a first metallization, and the second pre-preg layer including a second metallization not in physical contact with the first metallization. The package also includes solder mask layers on top and bottom surfaces of the substrate, a first semiconductor die coupled to the first metallization, and a second semiconductor die coupled to the second metallization, the first and second semiconductor dies configured to operate in separate voltage domains. The package also includes a mold compound covering the substrate and the first and second semiconductor dies.