Patent search ap:("TEXAS INSTRUMENTS INC") AND inv:"RUNYAN WALTER R" Page 1

1.

发明授权
Semiconductor wafer with at least one epitaxial layer and methods of making same 失效
Title translation: 具有至少一个外延层的半导体晶片及其制造方法

公开(公告)号：US3379584A

公开(公告)日：1968-04-23

申请号：US39440864

申请日：1964-09-04

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E , RUNYAN WALTER R

IPC: H01L21/761 , H01L21/8222 , H01L27/06 , H01L27/07

CPC classification number: H01L21/8222 , H01L21/761 , H01L27/0658 , H01L27/0772 , Y10S148/035 , Y10S148/037 , Y10S148/051 , Y10S148/085 , Y10S148/102 , Y10S148/115 , Y10S148/145 , Y10S438/975

2.

发明授权
Transistor structure 失效

公开(公告)号：US2948835A

公开(公告)日：1960-08-09

申请号：US76858158

申请日：1958-10-21

Applicant: TEXAS INSTRUMENTS INC

Inventor： RUNYAN WALTER R

IPC: H01L23/04

CPC classification number: H01L23/041 , H01L2224/48463 , H01L2924/09701

3.

发明授权
Compensated grown junction transistor 失效
Title translation: 补偿生长结晶体管

公开(公告)号：US3082130A

公开(公告)日：1963-03-19

申请号：US77080158

申请日：1958-10-30

Applicant: TEXAS INSTRUMENTS INC

Inventor： RUNYAN WALTER R

IPC: C30B15/04 , H01L21/00 , H01L29/00

CPC classification number: H01L21/00 , C30B15/04 , H01L29/00

4.

发明授权
Improved grown junction transistor and method of making same 失效
Title translation: 改进的生长结晶体管及其制造方法

公开(公告)号：US3079287A

公开(公告)日：1963-02-26

申请号：US83752659

申请日：1959-09-01

Applicant: TEXAS INSTRUMENTS INC

Inventor： ANDERSON ROBERT E , RUNYAN WALTER R

IPC: H01L21/22

CPC classification number: H01L21/22

5.

发明授权
Semiconductor integrated circuit structure 失效
Title translation: 半导体集成电路结构

公开(公告)号：US3534236A

公开(公告)日：1970-10-13

申请号：US3534236D

申请日：1967-11-24

Applicant: TEXAS INSTRUMENTS INC

Inventor： BEAN KENNETH E , RUNYAN WALTER R

IPC: H01L21/761 , H01L21/8222 , H01L27/06 , H01L27/07 , H01L19/00

CPC classification number: H01L21/8222 , H01L21/761 , H01L27/0658 , H01L27/0772 , Y10S148/035 , Y10S148/037 , Y10S148/051 , Y10S148/085 , Y10S148/102 , Y10S148/115 , Y10S148/145 , Y10S438/975

6.

发明授权
Semiconductor device and method of manufacture 失效

公开(公告)号：US3138495A

公开(公告)日：1964-06-23

申请号：US12753961

申请日：1961-07-28

Applicant: TEXAS INSTRUMENTS INC

Inventor： BYLANDER ERNEST G , RUNYAN WALTER R

IPC: H01L21/22

CPC classification number: H01L21/2215 , Y10S438/923

7.

发明授权
Method for recovery and reuse of quartz containers 失效
Title translation: 石英容器的回收和再利用方法

公开(公告)号：US3093456A

公开(公告)日：1963-06-11

申请号：US75837958

申请日：1958-09-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： RUNYAN WALTER R , ROSS JOHN W , FISCHER JAMES L

IPC: C01B33/037 , C30B13/14 , C30B15/10 , C30B35/00

CPC classification number: C01B33/037 , C30B13/14 , C30B15/10 , C30B35/002 , Y10S117/90 , Y10T117/1032

8.

发明授权
Method of growing shaped crystals 失效
Title translation: 生长成形晶体的方法

公开(公告)号：US3025146A

公开(公告)日：1962-03-13

申请号：US73038358

申请日：1958-04-23

Applicant: TEXAS INSTRUMENTS INC

Inventor： RUNYAN WALTER R

IPC: C30B15/00 , C30B15/36

CPC classification number: C30B15/36 , C30B15/00 , C30B29/60 , Y10S117/90 , Y10S117/902 , Y10S117/915

9.

发明授权
Grown junction transistors 失效
Title translation: 生长结晶体管

公开(公告)号：US2878152A

公开(公告)日：1959-03-17

申请号：US62478156

申请日：1956-11-28

Applicant: TEXAS INSTRUMENTS INC

Inventor： RUNYAN WALTER R , ANDERSON ROBERT E

IPC: C30B15/04 , H01L21/00 , H01L29/00

CPC classification number: H01L21/00 , C30B15/04 , H01L29/00

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