公开(公告)号：US20190019797A1

公开(公告)日：2019-01-17

申请号：US16126875

申请日：2018-09-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Liang CHEN ,  Chih-Ming LAI ,  Charles Chew-Yuen YOUNG ,  Chin-Yuan TSENG ,  Jiann-Tyng TZENG ,  Kam-Tou SIO ,  Ru-Gun LIU ,  Wei-Liang LIN ,  L. C. CHOU

IPC: H01L27/11 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L27/1104 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor device including multiple fins. At least a first set of fins among the multiple fins is substantially parallel. At least a second set of fins among the multiple fins is substantially collinear. For any given first and second fins of the multiple fins having corresponding first and second fin-thicknesses, the second fin-thickness is less than plus or minus about 50% of the first fin-thickness.

公开(公告)号：US20200335507A1

公开(公告)日：2020-10-22

申请号：US16918798

申请日：2020-07-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Liang CHEN ,  Chih-Ming LAI ,  Charles Chew-Yuen YOUNG ,  Chin-Yuan TSENG ,  Jiann-Tyng TZENG ,  Kam-Tou SIO ,  Ru-Gun LIU ,  Wei-Liang LIN ,  L. C. CHOU

IPC: H01L27/11 ,  H01L21/308 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: A semiconductor device including fins arranged so that: in a situation in which any given first one of the fins (first given fin) is immediately adjacent any given second one of the fins (second given fin), and subject to fabrication tolerance, there is a minimum gap, Gmin, between the first and second given fins; and the first and second given fins a minimum pitch, Pmin, that falls in a range as follows: (Gmin+(≈90%)*T1)≤Pmin≤(Gmin+(≈110%)*T1).

公开(公告)号：US20230247817A1

公开(公告)日：2023-08-03

申请号：US18190670

申请日：2023-03-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Liang CHEN ,  Chih-Ming LAI ,  Charles Chew-Yuen YOUNG ,  Chin-Yuan TSENG ,  Jiann-Tyng TZENG ,  Kam-Tou SIO ,  Ru-Gun LIU ,  Wei-Liang LIN ,  L. C. CHOU

IPC: H10B10/00 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/308 ,  H01L29/78 ,  H01L29/66

CPC classification number: H10B10/12 ,  H01L21/823431 ,  H01L27/0886 ,  H01L21/3083 ,  H01L21/3086 ,  H01L29/7851 ,  H01L29/66795 ,  H01L21/31144

Abstract: A method (of manufacturing fins for a semiconductor device) includes: forming semiconductor fins including ones thereof having a first cap with a first etch sensitivity (first capped fins) and second ones thereof having a second cap with a second etch sensitivity (second capped fins), the first and second etch sensitivities being different; and eliminating selected ones of the first capped fins and selected ones of the second capped fins.

公开(公告)号：US20220108990A1

公开(公告)日：2022-04-07

申请号：US17552433

申请日：2021-12-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Liang CHEN ,  Chih-Ming LAI ,  Charles Chew-Yuen YOUNG ,  Chin-Yuan TSENG ,  Jiann-Tyng TZENG ,  Kam-Tou SIO ,  Ru-Gun LIU ,  Wei-Liang LIN ,  L. C. CHOU

IPC: H01L27/11 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/308 ,  H01L29/78 ,  H01L29/66

Abstract: In an embodiment, a method (of manufacturing fins for a semiconductor device) includes: forming a first layer (on a semiconductor substrate) that has first spacers and etch stop layer (ESL) portions which are interspersed; forming second spacers on central regions of the first spacers and the ESL portions; removing exposed regions of the first spacers and the ESL portions and corresponding underlying portions of the semiconductor substrate; removing the second spacers resulting in corresponding first capped semiconductor fins and second capped semiconductor fins that are organized into first and second sets; each member of the first set having a first cap with a first etch sensitivity; and each member of the second set having a second cap with a different second etch sensitivity; and eliminating selected ones of the first capped semiconductor fins and selected ones of the second capped semiconductor fins.

公开(公告)号：US20170317089A1

公开(公告)日：2017-11-02

申请号：US15362002

申请日：2016-11-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chih-Liang CHEN ,  Chih-Ming LAI ,  Charles Chew-Yuen YOUNG ,  Chin-Yuan TSENG ,  Jiann-Tyng TZENG ,  Kam-Tou SIO ,  Ru-Gun LIU ,  Wei-Liang LIN ,  L. C. CHOU

IPC: H01L27/11 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/308

CPC classification number: H01L27/1104 ,  H01L21/3083 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/823431 ,  H01L27/0886

Abstract: A method, of manufacturing fins for a semiconductor device which includes Fin-FETs, includes: forming a structure including a semiconductor substrate and capped semiconductor fins, the capped semiconductor fins being organized into at least first and second sets, with each member of the first set having a first cap with a first etch sensitivity, and each member of the second set having a second cap with a second etch, the second etch sensitivity being different than the first etch sensitivity; removing selected members of the first set and selected members of the second set from the structure.