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公开(公告)号：US20220302315A1
公开(公告)日：2022-09-22
申请号：US17836852
申请日：2022-06-09
发明人： Feng Yuan , Ming-Shiang Lin , Chia-Cheng Ho , Jin Cai , Tzu-Chung Wang , Tung Ying Lee
IPC分类号： H01L29/78 , H01L29/66 , H01L29/51 , H01L21/8234
摘要： The various described embodiments provide a transistor with a negative capacitance, and a method of creating the same. The transistor includes a gate structure having a ferroelectric layer. The ferroelectric layer is formed by forming a thick ferroelectric film, annealing the ferroelectric film to have a desired phase, and thinning the ferroelectric film to a desired thickness of the ferroelectric layer. This process ensures that the ferroelectric layer will have ferroelectric properties regardless of its thickness.
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公开(公告)号：US20200273996A1
公开(公告)日：2020-08-27
申请号：US16874526
申请日：2020-05-14
发明人： Feng Yuan , Ming-Shiang Lin , Chia-Cheng Ho , Jin Cai , Tzu-Chung Wang , Tung Ying Lee
IPC分类号： H01L29/78 , H01L29/66 , H01L29/51 , H01L21/8234
摘要： The various described embodiments provide a transistor with a negative capacitance, and a method of creating the same. The transistor includes a gate structure having a ferroelectric layer. The ferroelectric layer is formed by forming a thick ferroelectric film, annealing the ferroelectric film to have a desired phase, and thinning the ferroelectric film to a desired thickness of the ferroelectric layer. This process ensures that the ferroelectric layer will have ferroelectric properties regardless of its thickness.
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公开(公告)号：US10732209B2
公开(公告)日：2020-08-04
申请号：US16588654
申请日：2019-09-30
摘要： A semiconductor test device for measuring a contact resistance includes: first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring. The semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad.
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公开(公告)号：US20220367718A1
公开(公告)日：2022-11-17
申请号：US17874466
申请日：2022-07-27
发明人： Chia-Cheng Ho , Ming-Shiang Lin , Jin Cai
摘要： A ferroelectric semiconductor device and method are described herein. The method includes performing a diffusion anneal process to drive elements of a dopant film through an amorphous silicon layer and into a gate dielectric layer over a fin to form a doped gate dielectric layer with a gradient depth profile of dopant concentrations. The doped gate dielectric layer is crystallized during a post-cap anneal process to form a gradient depth profile of ferroelectric properties within the crystallized gate dielectric layer. A metal gate electrode is formed over the crystallized gate dielectric layer to obtain a ferroelectric transistor with multi-ferroelectric properties between the gate electrode and the channel. The ferroelectric transistor may be used in deep neural network (DNN) applications.
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公开(公告)号：US11189726B2
公开(公告)日：2021-11-30
申请号：US16874539
申请日：2020-05-14
发明人： Feng Yuan , Ming-Shiang Lin , Chia-Cheng Ho , Jin Cai , Tzu-Chung Wang , Tung Ying Lee
IPC分类号： H01L29/78 , H01L29/66 , H01L29/51 , H01L21/8234
摘要： The various described embodiments provide a transistor with a negative capacitance, and a method of creating the same. The transistor includes a gate structure having a ferroelectric layer. The ferroelectric layer is formed by forming a thick ferroelectric film, annealing the ferroelectric film to have a desired phase, and thinning the ferroelectric film to a desired thickness of the ferroelectric layer. This process ensures that the ferroelectric layer will have ferroelectric properties regardless of its thickness.
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公开(公告)号：US10707347B2
公开(公告)日：2020-07-07
申请号：US16255334
申请日：2019-01-23
发明人： Feng Yuan , Chia-Cheng Ho , Tzu-Chung Wang , Tung Ying Lee , Jin Cai , Ming-Shiang Lin
IPC分类号： H01L29/66 , H01L29/51 , H01L21/8234 , H01L29/78
摘要： The various described embodiments provide a transistor with a negative capacitance, and a method of creating the same. The transistor includes a gate structure having a ferroelectric layer. The ferroelectric layer is formed by forming a thick ferroelectric film, annealing the ferroelectric film to have a desired phase, and thinning the ferroelectric film to a desired thickness of the ferroelectric layer. This process ensures that the ferroelectric layer will have ferroelectric properties regardless of its thickness.
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公开(公告)号：US11513145B2
公开(公告)日：2022-11-29
申请号：US16984073
申请日：2020-08-03
摘要： A semiconductor test device for measuring a contact resistance includes: first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring. The semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad.
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公开(公告)号：US11444174B2
公开(公告)日：2022-09-13
申请号：US16562416
申请日：2019-09-05
发明人： Kai-Tai Chang , Tung Ying Lee , Wei-Sheng Yun , Tzu-Chung Wang , Chia-Cheng Ho , Ming-Shiang Lin , Tzu-Chiang Chen
IPC分类号： H01L21/8234 , H01L29/66 , H01L21/762 , H01L21/306 , H01L29/08 , H01L27/088 , H01L21/3105 , H01L21/265 , H01L29/10 , H01L29/423 , H01L21/308
摘要： A semiconductor device includes a first fin and a second fin in a first direction and aligned in the first direction over a substrate, an isolation insulating layer disposed around lower portions of the first and second fins, a first gate electrode extending in a second direction crossing the first direction and a spacer dummy gate layer, and a source/drain epitaxial layer in a source/drain space in the first fin. The source/drain epitaxial layer is adjacent to the first gate electrode and the spacer dummy gate layer with gate sidewall spacers disposed therebetween, and the spacer dummy gate layer includes one selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbon nitride, and silicon carbon oxynitride.
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公开(公告)号：US10670641B2
公开(公告)日：2020-06-02
申请号：US15683317
申请日：2017-08-22
摘要： A semiconductor test device for measuring a contact resistance includes: first fin structures, upper portions of the first fin structures protruding from an isolation insulating layer; epitaxial layers formed on the upper portions of the first fin structures, respectively; first conductive layers formed on the epitaxial layers, respectively; a first contact layer disposed on the first conductive layers at a first point; a second contact layer disposed on the first conductive layers at a second point apart from the first point; a first pad coupled to the first contact layer via a first wiring; and a second pad coupled to the second contact layer via a second wiring. The semiconductor test device is configured to measure the contact resistance between the first contact layer and the first fin structures by applying a current between the first pad and the second pad.
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公开(公告)号：US20190067020A1
公开(公告)日：2019-02-28
申请号：US15689334
申请日：2017-08-29
发明人： Tzung-Yi Tsai , Yen-Ming Chen , Dian-Hau Chen , Han-Ting Tsai , Tsung-Lin Lee , Chia-Cheng Ho , Ming-Shiang Lin
IPC分类号： H01L21/308 , H01L21/311 , H01L21/3115
CPC分类号： H01L21/3081 , H01L21/3086 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/31155 , H01L27/0924
摘要： A method of forming a semiconductor device is disclosed. The method includes providing a device having a substrate and a hard mask layer over the substrate; forming a mandrel over the hard mask layer; depositing a material layer on sidewalls of the mandrel; implanting a dopant into the material layer; performing an etching process on the hard mask layer using the mandrel and the material layer as an etching mask, thereby forming a patterned hard mask layer, wherein the etching process concurrently produces a dielectric layer deposited on sidewalls of the patterned hard mask layer, the dielectric layer containing the dopant; and forming a fin by etching the substrate using the patterned hard mask layer and the dielectric layer collectively as an etching mask.
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