公开(公告)号：US20170194495A1

公开(公告)日：2017-07-06

申请号：US14984379

申请日：2015-12-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Chii-Horng Ll ,  Chien-l KUO ,  Lilly SU ,  Chien-Chang SU ,  Yi-Kai TSENG ,  Ying-Wei LI

IPC分类号： H01L29/78 ,  H01L29/161 ,  H01L21/02 ,  H01L29/167 ,  H01L29/08 ,  H01L29/66 ,  H01L29/165 ,  H01L29/16

CPC分类号： H01L29/7848 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/167 ,  H01L29/66477 ,  H01L29/66575

摘要： A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes.