公开(公告)号：US20250062201A1

公开(公告)日：2025-02-20

申请号：US18501254

申请日：2023-11-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Shien Chen ,  Chi-Yen Lin ,  Po-Chen Chen ,  Wu-An Weng ,  Hsu-Hsien Chen

IPC: H01L23/498 ,  H01L21/02 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065

Abstract: A package includes a first integrated circuit die and a second integrated circuit die over and bonded to the first integrated circuit die. A first surface region of the second integrated circuit die is hydrophobic, and the first integrated circuit die and the second integrated circuit die are bonded together with dielectric-to-dielectric bonds and metal-to-metal bonds. The package further includes a first insulating material over the first integrated circuit and surrounding the second integrated circuit die. The first insulating material contacts the first surface region.

公开(公告)号：US20250014961A1

公开(公告)日：2025-01-09

申请号：US18404243

申请日：2024-01-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hong Wang ,  Chen-Shien Chen ,  Ting Hao Kuo ,  Yu-Chia Lai

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/48 ,  H01L25/065

Abstract: Gap-fill dielectrics for die structures and methods of forming the same are provided. In an embodiment, a device includes: an outer gap-fill dielectric having a first coefficient of thermal expansion; a first integrated circuit die in the outer gap-fill dielectric; a second integrated circuit die in the outer gap-fill dielectric; an inner gap-fill dielectric between the first integrated circuit die and the second integrated circuit die, the inner gap-fill dielectric having a second coefficient of thermal expansion, the second coefficient of thermal expansion being greater than the first coefficient of thermal expansion; and a third integrated circuit die over the inner gap-fill dielectric, the third integrated circuit die bonded to the first integrated circuit die and to the second integrated circuit die.

公开(公告)号：US11961791B2

公开(公告)日：2024-04-16

申请号：US17663970

申请日：2022-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

IPC: H01L23/48 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H01L25/10 ,  H01L23/00

CPC classification number: H01L23/49816 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49822 ,  H01L25/105 ,  H01L24/16 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A conductive region is disposed in the polymer region and electrically coupled to the redistribution line. The conductive region includes a second flat top surface not higher than the first flat top surface.

公开(公告)号：US11894241B2

公开(公告)日：2024-02-06

申请号：US17220339

申请日：2021-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mirng-Ji Lii ,  Chen-Shien Chen ,  Lung-Kai Mao ,  Ming-Da Cheng ,  Wen-Hsiung Lu

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/522 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L21/4857 ,  H01L21/486 ,  H01L21/4853 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/5383 ,  H01L24/80 ,  H01L2224/80345 ,  H01L2224/80355

Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

公开(公告)号：US11631993B2

公开(公告)日：2023-04-18

申请号：US16933415

申请日：2020-07-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Chita Chuang ,  Chen-Shien Chen ,  Ming Hung Tseng ,  Sen-Kuei Hsu ,  Yu-Feng Chen ,  Yen-Liang Lin

IPC: H02J50/10 ,  H02J50/00 ,  H01F27/28 ,  H01F41/04 ,  H01F38/14 ,  H02J50/40 ,  H02J7/00 ,  H02J7/04 ,  H01L21/768

Abstract: Wireless charging devices, methods of manufacture thereof, and methods of charging electronic devices are disclosed. In some embodiments, a wireless charging device includes a controller, a molding material disposed around the controller, and an interconnect structure disposed over the molding material and coupled to the controller. The wireless charging device includes a wireless charging coil coupled to the controller. The wireless charging coil comprises a first portion disposed in the interconnect structure and a second portion disposed in the molding material. The wireless charging coil is adapted to provide an inductance to charge an electronic device.

公开(公告)号：US20220238480A1

公开(公告)日：2022-07-28

申请号：US17347871

申请日：2021-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kai Jun Zhan ,  Chin-Fu Kao ,  Kuang-Chun Lee ,  Ming-Da Cheng ,  Chen-Shien Chen

IPC: H01L23/00

Abstract: A method includes attaching a die to a thermal compression bonding (TCB) head through vacuum suction, wherein the die comprises a plurality of conductive pillars, attaching a first substrate to a chuck through vacuum suction, wherein the first substrate comprises a plurality of solder bumps, contacting a first conductive pillar of the plurality of conductive pillars to a first solder bump of the plurality of solder bumps, wherein contacting the first conductive pillar to the first solder bump results in a first height between a topmost surface of the first conductive pillar and a bottommost surface of the first solder bump, and adhering the first solder bump to the first conductive pillar to form a first joint, wherein adhering the first solder bump to the first conductive pillar comprises heating the TCB head.

公开(公告)号：US20220238353A1

公开(公告)日：2022-07-28

申请号：US17220339

申请日：2021-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Mirng-Ji Lii ,  Chen-Shien Chen ,  Lung-Kai Mao ,  Ming-Da Cheng ,  Wen-Hsiung Lu

IPC: H01L21/48 ,  H01L23/498

Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

公开(公告)号：US11257797B2

公开(公告)日：2022-02-22

申请号：US16689101

申请日：2019-11-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Dong-Han Shen ,  Chen-Shien Chen ,  Kuo-Chio Liu ,  Hsi-Kuei Cheng ,  Yi-Jen Lai

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/31 ,  H01L25/18 ,  H01L23/538 ,  H01L25/065

Abstract: A package on package structure includes a first package, a plurality of conductive bumps, a second package and an underfill. The conductive bumps are disposed on a second surface of the first package and electrically connected to the first package. The second package is disposed on the second surface of the first package through the conductive bumps, and includes a semiconductor device and an encapsulating material encapsulating the semiconductor device. A shortest distance from an upper surface of the encapsulating material to an upper surface of the semiconductor device is greater than or substantially equal to twice a thickness of the semiconductor device. The underfill is filled between the first package and the second package.

公开(公告)号：US11244919B2

公开(公告)日：2022-02-08

申请号：US16367273

申请日：2019-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Wen Hsiao ,  Chen-Shien Chen ,  Kuo-Ching Hsu ,  Mirng-Ji Lii

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/56

Abstract: A package structure is provided comprising a die, a redistribution layer, at least one integrated passive device (IPD), a plurality of solder balls and a molding compound. The die comprises a substrate and a plurality of conductive pads. The redistribution layer is disposed on the die, wherein the redistribution layer comprises first connection structures and second connection structures. The IPD is disposed on the redistribution layer, wherein the IPD is connected to the first connection structures of the redistribution layer. The plurality of solder balls is disposed on the redistribution layer, wherein the solder balls are disposed and connected to the second connection structures of the redistribution layer. The molding compound is disposed on the redistribution layer, and partially encapsulating the IPD and the plurality of solder balls, wherein top portions of the solder balls and a top surface of the IPD are exposed from the molding compound.

公开(公告)号：US11133274B2

公开(公告)日：2021-09-28

申请号：US16915780

申请日：2020-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Hua Yu ,  Yen-Chang Hu ,  Ching-Wen Hsiao ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Chih-Wei Lin ,  Chen-Shien Chen

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L21/56 ,  H01L23/538 ,  H01L23/525

Abstract: A method embodiment includes forming a sacrificial film layer over a top surface of a die, the die having a contact pad at the top surface. The die is attached to a carrier, and a molding compound is formed over the die and the sacrificial film layer. The molding compound extends along sidewalls of the die. The sacrificial film layer is exposed. The contact pad is exposed by removing at least a portion of the sacrificial film layer. A first polymer layer is formed over the die, and a redistribution layer (RDL) is formed over the die and electrically connects to the contact pad.