公开(公告)号：US20240112924A1

公开(公告)日：2024-04-04

申请号：US18150256

申请日：2023-01-05

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsu-Hsien Chen ,  Chen-Shien Chen ,  Ting Hao Kuo ,  Chi-Yen Lin ,  Yu-Chih Huang

IPC分类号： H01L21/56 ,  H01L21/306 ,  H01L21/768 ,  H01L21/78 ,  H01L23/522 ,  H01L23/538

CPC分类号： H01L21/563 ,  H01L21/30604 ,  H01L21/76802 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/5389

摘要： An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.

公开(公告)号：US20240304535A1

公开(公告)日：2024-09-12

申请号：US18334695

申请日：2023-06-14

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Shien Chen ,  Ting Hao Kuo ,  Hui-Chun Chiang ,  Yu-Chia Lai

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L21/768 ,  H01L23/00

CPC分类号： H01L23/49827 ,  H01L21/486 ,  H01L21/76829 ,  H01L24/06 ,  H01L2224/05025

摘要： A device includes: a first integrated circuit (IC) die; a first dielectric material around first sidewalls of the first IC die; a second IC die over and electrically coupled to the first IC die; and a second dielectric material over the first dielectric material and around second sidewalls of the second IC die, where in a top view, the second sidewalls of the second IC die are disposed within, and are spaced apart from, the first sidewalls of the first IC die.

公开(公告)号：US20220367420A1

公开(公告)日：2022-11-17

申请号：US17874598

申请日：2022-07-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chen-Hua Yu ,  Chi-Hui Lai ,  Ting Hao Kuo ,  Hao-Yi Tsai ,  Chung-Shi Liu

IPC分类号： H01L25/065 ,  H01L23/31 ,  H01L21/56 ,  H01L23/40 ,  H01L23/367

摘要： An embodiment includes a first package component including a first integrated circuit die and a first encapsulant at least partially surrounding the first integrated circuit die. The device also includes a redistribution structure on the first encapsulant and coupled to the first integrated circuit die. The device also includes a first thermal module coupled to the first integrated circuit die. The device also includes a second package component bonded to the first package component, the second package component including a power module attached to the first package component, the power module including active devices. The device also includes a second thermal module coupled to the power module. The device also includes a mechanical brace extending from a top surface of the second thermal module to a bottom surface of the first thermal module, the mechanical brace physically contacting the first thermal module and the second thermal module.