Non-volatile electrochemical memory device
    6.
    发明授权
    Non-volatile electrochemical memory device 有权
    非挥发性电化学记忆装置

    公开(公告)号:US08218351B2

    公开(公告)日:2012-07-10

    申请号:US12393255

    申请日:2009-02-26

    IPC分类号: G11C13/00

    摘要: A non-volatile electrochemical memory cell formed of a stack of thin films comprising at least one first active layer, suited to releasing and accepting, in a reversible manner, at least one ion species, at least one second active layer, suited to releasing and accepting said ion species, in a reversible manner, the active layers being based on materials having different compositions and electrochemical potential profiles.

    摘要翻译: 一种非易失性电化学存储单元,由一叠薄膜组成,包括至少一个第一活性层,其适于以可逆方式释放和接受至少一种离子种类,至少一种第二活性层,适于释放和 以可逆的方式接受所述离子物质,所述活性层基于具有不同组成和电化学电位分布的材料。

    Compound Based on Titanium Diphosphate and Carbon, Preparation Process, and Use as an Active Material of an Electrode for a Lithium Storage Battery
    10.
    发明申请
    Compound Based on Titanium Diphosphate and Carbon, Preparation Process, and Use as an Active Material of an Electrode for a Lithium Storage Battery 有权
    基于二磷酸二钙和碳的化合物,制备方法和用作锂蓄电池电极的活性材料

    公开(公告)号:US20090026413A1

    公开(公告)日:2009-01-29

    申请号:US12224651

    申请日:2007-03-13

    IPC分类号: H01B1/06 B05D5/12

    摘要: A compound containing titanium diphosphate TiP2O7 and carbon covering at least part of the surface of the TiP2O7 particles presents properties which make it suitable for use as active material of an electrode for a lithium storage battery. A compound of this kind is prepared more particularly by mixing at least one first precursor containing the titanium element with a +4 oxidation state, a phosphorus-based second precursor and an organic precursor containing the carbon element. The mixture then undergoes heat treatment at a temperature of between 500° C. and 800° C. in an inert atmosphere.

    摘要翻译: 含有二磷酸钛TiP 2 O 7的化合物和覆盖TiP 2 O 7颗粒表面的至少一部分的碳的化合物具有使其适合用作锂蓄电池用电极的活性物质的性质。 通过将含有钛元素的至少一种第一前体与+4氧化态,磷系第二前体和含有碳元素的有机前体进行混合来制备这种化合物。 然后将混合物在惰性气氛中在500℃至800℃的温度下进行热处理。