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公开(公告)号：US20230008594A1
公开(公告)日：2023-01-12
申请号：US17848911
申请日：2022-06-24
Applicant: Yong Chang , Silviu Velicu , Sushant Sonde
Inventor： Yong Chang , Silviu Velicu , Sushant Sonde
IPC: H01L31/0352 , H01L23/00 , H01L31/02 , H01L31/0224 , H01L31/0216
Abstract: An FPA includes a substrate; a plurality of spaced-apart implant regions deposited in the substrate; a plurality of supplemental metal contacts, one supplemental metal contact of the plurality of supplemental metal contacts electrically connected to one implant region of the plurality of implant regions; a plurality of metal conductors electrically connecting the plurality of supplemental metal contacts; and a primary metal contact, electrically connected to the plurality of supplemental metal contacts by at least one of the metal conductors of the plurality of metal conductors. The pixel can include an Indium bump electrically connected to the primary metal contact.
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公开(公告)号：US20230002928A1
公开(公告)日：2023-01-05
申请号：US17838956
申请日：2022-06-13
Applicant: Sushant Sonde , Yong Chang , Silviu Velicu
Inventor： Sushant Sonde , Yong Chang , Silviu Velicu
Abstract: In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.
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公开(公告)号：US11725300B2
公开(公告)日：2023-08-15
申请号：US17838956
申请日：2022-06-13
Applicant: Sushant Sonde , Yong Chang , Silviu Velicu
Inventor： Sushant Sonde , Yong Chang , Silviu Velicu
Abstract: In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.
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公开(公告)号：US11670616B2
公开(公告)日：2023-06-06
申请号：US17354859
申请日：2021-06-22
Applicant: Sushant Sonde , Yong Chang , Silviu Velicu
Inventor： Sushant Sonde , Yong Chang , Silviu Velicu
IPC: H01L23/00 , H01L27/146
CPC classification number: H01L24/81 , H01L24/13 , H01L24/16 , H01L27/1469 , H01L27/14634 , H01L27/14636 , H01L2224/13109 , H01L2224/16145 , H01L2224/81013 , H01L2224/81895 , H01L2224/81896
Abstract: A method of hybridizing an FPA having an IR component and a ROIC component and interconnects between the two components, includes the steps of: providing an IR detector array and a Si ROIC; depositing a dielectric layer on both the IR detector array and on the Si ROIC; patterning the dielectric on both components to create openings to expose contact areas on each of the IR detector array and the Si ROIC; depositing indium to fill the openings on both the IR detector array and the Si ROIC to create indium bumps, the indium bumps electrically connected to the contact areas of the IR detector array and the Si ROIC respectively, exposed on a top surface of the IR detector array and the Si ROIC; activating exposed dielectric layers on the IR detector array and the Si ROIC in a plasma; and closely contacting the indium bumps of the IR detector array and the Si ROIC by bonding together the exposed dielectric surfaces of the IR detector array and the Si ROIC. Another exemplary method provides a pillar support of the indium bumps on the IR detector array rather than a full dielectric layer support. Another exemplary method includes a surrounding dielectric edge support between the IR detector array and the Si ROIC with the pillar supports.
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公开(公告)号：US07821807B2
公开(公告)日：2010-10-26
申请号：US12105082
申请日：2008-04-17
Applicant: Silviu Velicu , Christoph H. Grein , Sivalingam Sivananthan
Inventor： Silviu Velicu , Christoph H. Grein , Sivalingam Sivananthan
IPC: G11C11/36 , H01L31/0328 , H01L21/00
CPC classification number: H01L31/101 , B82Y20/00 , H01L31/035236 , H01L31/1032 , H01L31/109
Abstract: A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a first side of the active region and extracts minority carriers from the active region. It also has majority carriers within the extraction region flowing toward the active region in a condition of reverse bias. An exclusion region is disposed on a second side of the active region and has minority carriers within the exclusion region flowing toward the active region. It receives majority carriers from the active region. At least one of the extraction and exclusion region provides a barrier for substantially reducing flow of one of the majority carriers or the minority carriers, whichever is flowing toward the active region, while permitting flow of the other minority carriers or majority carriers flowing out of the active region. The barrier substantially reduces flow of the carriers without relying on diffusion length of the one carriers in order to reduce the flow.
Abstract translation: 光敏二极管具有限定第一导电类型的多数载流子和第二导电类型的少数载流子的有源区。 提取区域设置在有源区域的第一侧上，并从有源区域中提取少数载流子。 在反向偏压的条件下，提取区域内的多数载流子流向有源区域。 排除区域设置在有源区的第二侧上，并且在排除区域内具有流向有源区的少数载流子。 它从主动区域接收多数运营商。 提取和排除区域中的至少一个提供了用于基本上减少多数载流子或少数载流子之一的流动的屏障，无论哪个流向有源区域，同时允许其它少数载流子或多数载流子流出 活跃区域。 屏障大大减少了载流子的流动，而不依赖于一个载体的扩散长度，以便减少流动。
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Patent Agency Ranking
公开(公告)号：US06906358B2
公开(公告)日：2005-06-14
申请号：US10354687
申请日：2003-01-30
Applicant: Christoph H. Grein , Silviu Velicu , Sivalingam Sivananthan
Inventor： Christoph H. Grein , Silviu Velicu , Sivalingam Sivananthan
IPC: H01L27/148 , H01L29/768 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC classification number: H01L31/101 , B82Y20/00 , H01L31/035236 , H01L31/1032 , H01L31/109
Abstract: A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. At least one extraction region is disposed on a first side of the active region and has a majority carrier of the second conductivity type. Carriers of the second conductivity type are extracted from the active region and into the extraction region under a condition of reverse bias. At least one exclusion region is disposed on a second side of the active region and has a majority carrier of the first conductivity type. The exclusion region prevents entry of its minority carriers, which are of the second conductivity type, into the active region while in a condition of reverse bias. The exclusion region includes a superlattice with a plurality of layers.
Abstract translation: 光敏二极管具有限定第一导电类型的多数载流子和第二导电类型的少数载流子的有源区。 至少一个提取区域设置在有源区域的第一侧上并且具有第二导电类型的多数载流子。 第二导电类型的载体在反向偏压的条件下从有源区域提取并进入提取区域。 至少一个排除区域设置在有源区域的第二侧上并且具有第一导电类型的多数载流子。 排斥区域在反向偏压的条件下防止其第二导电类型的少数载流子进入有源区域。 排除区域包括具有多个层的超晶格。
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7.发明授权公开(公告)号：US11506598B2
公开(公告)日：2022-11-22
申请号：US16699552
申请日：2019-11-29
Applicant: Wei Gao , Chang Yong , Silviu Velicu , Sivalingam Sivananthan
Inventor： Wei Gao , Chang Yong , Silviu Velicu , Sivalingam Sivananthan
Abstract: A multiband IR adjunct (MIRA) sensor to spectroscopically determine the content and the concentration of chemical composition of a targeted object, includes a sensor housing, a first front optics in a first optical channel, a second front optics in the first optical channel, an acousto-optic tunable filter (AOTF), a photo detector (PD), a set of back optics in the first optical channel that focuses polarized narrow-band light beams received from the AOTF device onto the PD, the PD converting the polarized narrow-band light beams into an electrical signal, and a data acquisition unit signal-connected to the PD, the data acquisition unit collecting the electrical signals. Multiple optical channels can be provided within the housing to analyze UV/VIS/near infrared (NIR), short-wavelength infrared (SWIR), mid-wavelength infrared (MWIR), and LWIR wavelength ranges respectively.
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8.发明授权Method for creating nonequilibrium photodetectors with single carrier species barriers 有权用于产生具有单载体物质屏障的非平衡光电探测器的方法公开(公告)号：US08072801B2
公开(公告)日：2011-12-06
申请号：US12788490
申请日：2010-05-27
Applicant: Silviu Velicu , Christoph H. Grein , Sivalingam Sivananthan
Inventor： Silviu Velicu , Christoph H. Grein , Sivalingam Sivananthan
CPC classification number: H01L31/101 , B82Y20/00 , H01L31/035236 , H01L31/1032 , H01L31/109
Abstract: A method of forming a diode comprises the steps of forming an extraction region of a first conductivity type, forming an active region of a second conductivity type that is opposite the first conductivity type, and forming an exclusion region of the second conductivity type to be adjacent the active region. The active region is formed to be adjacent to the extraction region and along a reverse bias path of the extraction region and the exclusion region does not resupply minority carriers while removing majority carriers. At least one of the steps of forming the exclusion region and forming the extraction region includes the additional step of forming a barrier that substantially reduces the flow of the carriers that flow toward the active region, but does not rely on a diffusion length of the carriers to block the carriers.
Abstract translation: 形成二极管的方法包括以下步骤：形成第一导电类型的提取区域，形成与第一导电类型相反的第二导电类型的有源区，并形成邻近的第二导电类型的排除区域 活跃区域。 有源区形成为与提取区域相邻并且沿着提取区域的反向偏置路径形成，并且排除区域不会补偿少数载流子同时去除多数载流子。 形成排除区域并形成提取区域的步骤中的至少一个包括形成屏障的附加步骤，其基本上减少流向有源区域的载流子的流动，但不依赖于载流子的扩散长度 阻止运营商。
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公开(公告)号：US07045378B2
公开(公告)日：2006-05-16
申请号：US10951330
申请日：2004-09-24
Applicant: Christoph H. Grein , Silviu Velicu , Sivalingam Sivananthan
Inventor： Christoph H. Grein , Silviu Velicu , Sivalingam Sivananthan
IPC: H01L21/00
CPC classification number: H01L31/101 , B82Y20/00 , H01L31/035236 , H01L31/1032 , H01L31/109
Abstract: A photosensitive diode has superlattice exclusion region formed from a stack of first and second layers. The first layers are penetrated by minority carriers using quantum mechanical tunneling and reduce minority carrier mobility. The second layers have a sufficiently low bandgap that the tunneling minority carriers can reach an active region of the diode. The process of successively forming first and second layers is repeated until the exclusion region is at least three times the minority carrier diffusion length.
Abstract translation: 感光二极管具有由第一层和第二层堆叠形成的超晶格排阻区。 第一层由少数载流子穿透，使用量子力学隧道，降低少数载流子迁移率。 第二层具有足够低的带隙，隧穿的少数载流子可以到达二极管的有源区。 重复连续形成第一层和第二层的过程，直到排除区域为少数载流子扩散长度的至少三倍。
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10.发明申请公开(公告)号：US20210164890A1
公开(公告)日：2021-06-03
申请号：US16699552
申请日：2019-11-29
Applicant: Wei Gao , Chang Yong , Silviu Velicu , Sivalingam Sivananthan
Inventor： Wei Gao , Chang Yong , Silviu Velicu , Sivalingam Sivananthan
Abstract: A multiband IR adjunct (MIRA) sensor to spectroscopically determine the content and the concentration of chemical composition of a targeted object, includes a sensor housing, a first front optics in a first optical channel, a second front optics in the first optical channel, an acousto-optic tunable filter (AOTF), a photo detector (PD), a set of back optics in the first optical channel that focuses polarized narrow-band light beams received from the AOTF device onto the PD, the PD converting the polarized narrow-band light beams into an electrical signal, and a data acquisition unit signal-connected to the PD, the data acquisition unit collecting the electrical signals. Multiple optical channels can be provided within the housing to analyze UV/VIS/near infrared (NIR), short-wavelength infrared (SWIR), mid-wavelength infrared (MWIR), and LWIR wavelength ranges respectively.
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