公开(公告)号：US11094537B2

公开(公告)日：2021-08-17

申请号：US16787700

申请日：2020-02-11

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Yuki Hiromura ,  Naoki Matsumoto ,  Seiji Nakahata ,  Fumitake Nakanishi ,  Takuya Yanagisawa ,  Koji Uematsu ,  Yuki Seki ,  Yoshiyuki Yamamoto ,  Yusuke Yoshizumi ,  Hidenori Mikami

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/683 ,  H01L21/762 ,  B32B7/04 ,  H01L29/20 ,  B32B7/06 ,  B32B7/02 ,  H01L33/02 ,  H01L33/00 ,  H01L33/12

摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

公开(公告)号：US10443151B2

公开(公告)日：2019-10-15

申请号：US15958589

申请日：2018-04-20

申请人： Sumitomo Electric Industries, Ltd.

发明人： Makoto Kiyama ,  Ryu Hirota ,  Seiji Nakahata

IPC分类号： B32B3/00 ,  C30B29/40 ,  H01L29/04 ,  H01L29/20 ,  H01L21/02 ,  C30B25/04 ,  C30B25/16 ,  C30B25/18 ,  H01L29/66 ,  H01L29/872

摘要： There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25° C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II): Ibe1a>Ibe2a . . . (I) and 2.1≤Ibe1a/Ibe2a≤9.4 . . . (II).

公开(公告)号：US10078059B2

公开(公告)日：2018-09-18

申请号：US15398451

申请日：2017-01-04

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B25/02 ,  G01N23/207 ,  H01L29/04 ,  H01L29/20 ,  H01L21/02 ,  H01L21/66 ,  G01B15/08 ,  C30B25/20 ,  C30B25/18 ,  C30B29/40 ,  C30B33/10

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

公开(公告)号：US09570540B2

公开(公告)日：2017-02-14

申请号：US14455781

申请日：2014-08-08

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B25/14 ,  H01L29/04 ,  C30B29/40 ,  C30B33/00 ,  H01L29/20 ,  C30B29/38

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US09368568B2

公开(公告)日：2016-06-14

申请号：US14470903

申请日：2014-08-27

申请人： Sumitomo Electric Industries, Ltd.

发明人： Koji Uematsu ,  Hideki Osada ,  Seiji Nakahata ,  Shinsuke Fujiwara

IPC分类号： H01L29/20 ,  H01L29/04 ,  H01L21/20 ,  C30B29/40 ,  C30B33/06 ,  H01L21/02 ,  C01B21/06 ,  H01L33/16 ,  H01L33/32

CPC分类号： H01L29/045 ,  C01B21/0632 ,  C01P2002/90 ,  C01P2006/12 ,  C30B29/403 ,  C30B29/406 ,  C30B33/06 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/16 ,  H01L33/32

摘要： Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1×1016 cm−3 to 4×1019 cm−3 or a silicon-atom concentration of 6×1014 cm−3 to 5×1018 cm−3, and by having a carrier concentration of 1×1016 cm−3 to 6×1019 cm−3.

摘要翻译： 通过从III族氮化物本体晶体切割出具有主表面平面取向的多个III族氮化物晶体衬底相对于晶体几何等效的平面取向产生的III族氮化物晶体，所述III- 20-21}，{20-2-1}，{22-41}和{22-4-1}，横向布置基板彼此相邻，使得它们的主表面彼此平行并且使得它们 方向彼此一致，并且在主表面上生长III族氮化物晶体。 III族氮化物晶体基板的特征还在于满足1×1016cm-3至4×1019cm-3的氧原子浓度或6×1014cm-3至5×1018的硅原子浓度 cm 3，载流子浓度为1×10 16 cm -3〜6×10 19 cm -3。

公开(公告)号：US10600676B2

公开(公告)日：2020-03-24

申请号：US15879018

申请日：2018-01-24

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Yuki Hiromura ,  Naoki Matsumoto ,  Seiji Nakahata ,  Fumitake Nakanishi ,  Takuya Yanagisawa ,  Koji Uematsu ,  Yuki Seki ,  Yoshiyuki Yamamoto ,  Yusuke Yoshizumi ,  Hidenori Mikami

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/683 ,  H01L21/762 ,  B32B7/02 ,  B32B7/04 ,  H01L29/20 ,  B32B7/06 ,  H01L33/02 ,  H01L33/00

摘要： Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 μm or more. A sheet resistance of a group III-nitride-film-side main surface is 200 Ω/sq or less.

公开(公告)号：US20150008563A1

公开(公告)日：2015-01-08

申请号：US14491962

申请日：2014-09-19

申请人： Sumitomo Electric Industries, Ltd.

发明人： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC分类号： H01L29/04 ,  H01L29/20

CPC分类号： H01L29/045 ,  C30B9/12 ,  C30B19/02 ,  C30B23/025 ,  C30B25/18 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  H01L29/73 ,  H01L29/772 ,  H01L29/778 ,  H01L29/872 ,  H01L33/16

摘要： Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.

摘要翻译： III-III族氮化物晶体复合材料由III-氮化物块状晶体切割的特别加工的晶片组成，其主表面为{1-10±2}，{11-2±2}，{20-2±1} 或{22-4±1}取向，其中每个切片的主表面侧面朝上地彼此相邻地设置，并且III-氮化物晶体外延地存在于相邻切片的主表面上，其中III族氮化物晶体包含 作为主要杂质，硅原子或氧原子。 利用X射线衍射测定FWHM，沿着投影到任一主表面上的衬底的<0001>方向限定的轴测量，FWHM峰值区域以3至5mm的间隔存在。 此外，沿着III族氮化物晶体衬底的<0001>方向测量穿透位错密度，穿透位错密度峰值区域以3至5mm的间隔存在。

公开(公告)号：US08828140B2

公开(公告)日：2014-09-09

申请号：US13935360

申请日：2013-07-03

申请人： Sumitomo Electric Industries, Ltd.

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B25/12

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US20140175616A1

公开(公告)日：2014-06-26

申请号：US14194830

申请日：2014-03-03

申请人： Sumitomo Electric Industries, Ltd.

发明人： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC分类号： H01L29/04

CPC分类号： H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

摘要： Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms.

摘要翻译： III-III族氮化物晶体复合材料由III-氮化物块状晶体切割的特别加工的晶片组成，其主表面为{1-10±2}，{11-2±2}，{20-2±1} 或{22-4±1}取向，其中每个切片的主表面侧面朝上地彼此相邻地设置，并且III-氮化物晶体外延地存在于相邻切片的主表面上，其中III族氮化物晶体包含 作为主要杂质，硅原子或氧原子。

公开(公告)号：US08709923B2

公开(公告)日：2014-04-29

申请号：US13762401

申请日：2013-02-08

申请人： Sumitomo Electric Industries, Ltd.

发明人： Naho Mizuhara ,  Koji Uematsu ,  Michimasa Miyanaga ,  Keisuke Tanizaki ,  Hideaki Nakahata ,  Seiji Nakahata ,  Takuji Okahisa

IPC分类号： H01L21/20 ,  C30B19/12 ,  C30B25/18

CPC分类号： H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

摘要： Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates.

摘要翻译： 提供了通过选择来制造具有除{0001}以外的平面取向的主表面的III族氮化物晶体的方法，所述III族氮化物晶体制造方法包括：通过多个平面来切割III族氮化物块状晶体的步骤 在指定的平面方向的方向上限定预定的切片厚度，以产生具有指定的平面取向的主表面的多个III族氮化物晶体基板; 以使得基板的主表面彼此平行并且两个邻接的III族氮化物晶体基板之间的切片厚度的任何差异不大于0.1mm的方式将彼此相邻的基板设置在一起的步骤; 以及在衬底的主表面上生长III族氮化物晶体的步骤。