公开(公告)号：US10458043B2

公开(公告)日：2019-10-29

申请号：US15319076

申请日：2015-04-10

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Makoto Kiyama ,  Ryu Hirota ,  Seiji Nakahata

IPC分类号： B32B9/00 ,  C30B29/40 ,  C30B25/02 ,  C30B29/64

摘要： A gallium nitride substrate has a surface with a diameter of not less than 100 mm, a difference being not less than 0.1 cm−1 and not more than 2 cm−1 between maximum and minimum values of wave numbers at a maximum peak of peaks corresponding to an E2H phonon mode in micro-Raman scattering mapping measurement at each of square regions having sides each having a length of 2 mm, the square regions being located at a total of five locations including a central location and four circumferential edge locations on the surface of the gallium nitride substrate, a difference being not more than 2 cm−1 between maximum and minimum values of the wave numbers at the maximum peak of the peaks corresponding to the E2H phonon mode at all of measurement points in the five locations.

公开(公告)号：US10006147B2

公开(公告)日：2018-06-26

申请号：US15318029

申请日：2015-04-16

申请人： Sumitomo Electric Industries, Ltd.

发明人： Makoto Kiyama ,  Ryu Hirota ,  Seiji Nakahata

IPC分类号： B32B3/00 ,  C30B29/40 ,  H01L29/20 ,  H01L29/04

CPC分类号： C30B29/406 ,  C30B25/04 ,  C30B25/165 ,  C30B25/183 ,  H01L21/02395 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/04 ,  H01L29/2003 ,  H01L29/66212 ,  H01L29/872

摘要： There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25° C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II): Ibe1a>Ibe2a  (I) and 2.1≤Ibe1a/Ibe2a≤9.4  (II).

公开(公告)号：US20130244406A1

公开(公告)日：2013-09-19

申请号：US13777547

申请日：2013-02-26

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Hitoshi KASAI ,  Takuji Okahisa ,  Shunsuke Fujita ,  Naoki Matsumoto ,  Hideyuki Ijiri ,  Fumitaka Sato ,  Kensaku Motoki ,  Seiji Nakahata ,  Koji Uematsu ,  Ryu Hirota

IPC分类号： H01L21/02

CPC分类号： H01L21/02617 ,  C23C16/303 ,  C23C16/4405 ,  C23C16/4488 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403

摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.

摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。 因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

公开(公告)号：US10443151B2

公开(公告)日：2019-10-15

申请号：US15958589

申请日：2018-04-20

申请人： Sumitomo Electric Industries, Ltd.

发明人： Makoto Kiyama ,  Ryu Hirota ,  Seiji Nakahata

IPC分类号： B32B3/00 ,  C30B29/40 ,  H01L29/04 ,  H01L29/20 ,  H01L21/02 ,  C30B25/04 ,  C30B25/16 ,  C30B25/18 ,  H01L29/66 ,  H01L29/872

摘要： There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25° C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II): Ibe1a>Ibe2a . . . (I) and 2.1≤Ibe1a/Ibe2a≤9.4 . . . (II).