公开(公告)号：US20030128497A1

公开(公告)日：2003-07-10

申请号：US10268433

申请日：2002-10-10

Applicant: Shipley Company, L.L.C.

Inventor： Craig S. Allen ,  Maria Anna Rzeznik ,  S. Matthew Cairns

IPC: H01G004/228 ,  H01G004/20

CPC classification number: H05K1/162 ,  H01G4/06 ,  H01L21/2885 ,  H01L28/56 ,  H01L28/60 ,  H05K3/181 ,  H05K2201/0195 ,  H05K2201/0236 ,  H05K2201/09309

Abstract: Multilayer dielectric structures particularly suitable for use in capacitors and having a plating dopant in an amount sufficient to promote plating of a conductive layer are provided, together with methods of forming such structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

公开(公告)号：US20040231757A1

公开(公告)日：2004-11-25

申请号：US10873523

申请日：2004-06-21

Applicant: Shipley Company, L.L.C.

Inventor： Craig S. Allen ,  John Schemenaur ,  David D. Senk ,  Marc Langlois ,  Xiaodong Hu ,  Jan Tzyy-Jiuan Hwang ,  Jud Ready ,  Trifon Tomov

IPC: C22C005/04

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C7/06 ,  H01C17/08 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2203/0361 ,  Y10T428/261 ,  Y10T428/31678

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract translation: 公开了包含铂和约5至约70摩尔％的铱，钌或其混合物的电阻材料，其基于铂为100％计算。

公开(公告)号：US20030121883A1

公开(公告)日：2003-07-03

申请号：US10190292

申请日：2002-07-03

Applicant: Shipley Company, L.L.C.

Inventor： Craig S. Allen ,  John Schemenaur ,  David D. Senk ,  Marc Langlois ,  Xiaodong Hu ,  Jan Tzyy-Jiuan Hwang ,  Jud Ready ,  Trifon Tomov

IPC: C23F001/00

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C7/06 ,  H01C17/08 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2203/0361 ,  Y10T428/261 ,  Y10T428/31678

Abstract: Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Abstract translation: 公开了包含铂和约5至约70摩尔％的铱，钌或其混合物的电阻材料，其基于铂为100％计算。

公开(公告)号：US20030231099A1

公开(公告)日：2003-12-18

申请号：US10340992

申请日：2003-01-13

Applicant: Shipley company, L.L.C.

Inventor： John Schemenaur ,  Rajan Hariharan ,  Marc Langlois ,  Craig S. Allen

IPC: H01C001/012

CPC classification number: H05K1/167 ,  H01C7/006 ,  H01C17/075 ,  H05K3/382 ,  H05K2201/0355 ,  H05K2203/0307 ,  H05K2203/0338 ,  H05K2203/0361 ,  H05K2203/0723 ,  Y10T428/12431 ,  Y10T428/12438

Abstract: Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 nullm and a peak-to-peak wavelength of 2 to 20 nullm.

Abstract translation: 公开了一种用于嵌入电介质材料的电阻器结构，该电介质材料包括布置在导电层表面上的薄膜电阻材料，其中该表面具有Rz（din）值为3-10μm的各向同性表面粗糙度，并且峰 - 峰值波长为2〜20um。

公开(公告)号：US20030128496A1

公开(公告)日：2003-07-10

申请号：US10268270

申请日：2002-10-10

Applicant: Shipley Company, L.L.C.

Inventor： Craig S. Allen ,  Maria Anna Rzeznik ,  David L. Jacques

IPC: H01G004/228

CPC classification number: H01G4/06 ,  H05K1/162 ,  H05K3/181 ,  H05K3/381 ,  H05K2201/0116 ,  H05K2201/0195 ,  H05K2201/0212 ,  H05K2201/0236 ,  H05K2201/0355 ,  H05K2203/0773

Abstract: Dielectric structures particularly suitable for use in capacitors and having a textured surface are provided, together with methods of forming these structures. Such dielectric structures show increased adhesion of subsequently applied conductive layers.

Abstract translation: 提供特别适用于电容器并具有纹理表面的电介质结构以及形成这些结构的方法。 这种介电结构显示随后施加的导电层的附着力增加。

公开(公告)号：US20040257193A1

公开(公告)日：2004-12-23

申请号：US10688458

申请日：2003-10-17

Applicant: Shipley Company, L.L.C.

Inventor： Craig S. Allen ,  Andrew T. Hunt ,  Wen-Yi Lin ,  David D. Senk ,  John Schemenaur

IPC: H01C001/012

CPC classification number: H01C17/065 ,  H05K1/167 ,  H05K3/025 ,  H05K2201/0355 ,  H05K2201/0373 ,  H05K2203/0361

Abstract: Resistive materials have resistivities that are axis dependent are provided. Such resistive materials having a resistivity in a first direction and a very different resistivity in an orthogonal direction. These resistive materials are particularly suitable for use as resistors embedded in printed wiring boards.

Abstract translation: 电阻材料具有轴向依赖性的电阻率。 这种电阻材料在正交方向具有第一方向的电阻率和非常不同的电阻率。 这些电阻材料特别适用于嵌入印刷电路板的电阻器。

公开(公告)号：US20030004218A1

公开(公告)日：2003-01-02

申请号：US10186397

申请日：2002-07-01

Applicant: Shipley Company, L.L.C.

Inventor： Craig S. Allen ,  Nikoi Annan ,  Robert M. Blankenship ,  Michael K. Gallagher ,  Robert H. Gore ,  Angelo A. Lamola ,  Yujian You

IPC: C08J009/02

CPC classification number: C08J9/26 ,  C08J2201/046 ,  C08J2383/04 ,  H05K1/0313 ,  H05K3/0011 ,  Y10S438/96

Abstract: Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.

公开(公告)号：US20040196620A1

公开(公告)日：2004-10-07

申请号：US10830596

申请日：2004-04-24

Applicant: Shipley Company, L.L.C.

Inventor： Philip D. Knudsen ,  Craig S. Allen

IPC: H01G004/06

CPC classification number: H01G4/206 ,  H05K1/162 ,  H05K2201/0129 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0195 ,  H05K2201/0323 ,  H05K2201/09309 ,  Y10T428/24975 ,  Y10T428/30

Abstract: A dielectric composed of a core material between two polymer layers that have permittivity values less than the core material. The polymer layers provide structural integrity for the dielectric. The dielectric can be employed in a capacitor to fine tune the capacitance of the capacitor. The dielectric and the capacitor may have a thickness in the micron range. Accordingly, the dielectric and capacitor provide for the miniaturization of electronic devices. The dielectric may be employed in decoupling capacitors to reduce noise in electronic devices.

Abstract translation: 由两层聚合物层之间的芯材组成的电介质，其电容率值小于芯材。 聚合物层为电介质提供结构完整性。 可以在电容器中使用电介质来微调电容器的电容。 电介质和电容器可以具有微米范围内的厚度。 因此，电介质和电容器用于电子设备的小型化。 电介质可以用于去耦电容器以减少电子设备中的噪声。