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公开(公告)号：US08397017B2
公开(公告)日：2013-03-12
申请号：US12723846
申请日：2010-03-15
IPC分类号： G06F13/00
CPC分类号： G06F12/0246 , G06F3/061 , G06F3/064 , G06F3/0679 , G06F2212/7207
摘要： A volatile management memory stores management information for managing a use state of a storage medium. A management information storing unit divides the management information into plural division pieces and individually stores them in the storage medium. A main controller receives a command from a host device while the division pieces are being stored, performs data processing for the storage medium in response to the command between each division piece is stored, updates the management information divided into the division pieces according to the data processing content, and creates a log representing an update content of the management information. A log storing unit stores the log in the storage medium. A restoring unit reads the division pieces stored in the storage medium to the management memory as the management information, updates the management information according to the log stored in the storage medium, and restores the updated management information.
摘要翻译： 易失性管理存储器存储用于管理存储介质的使用状态的管理信息。 管理信息存储单元将管理信息分成多个分割片，并将它们分别存储在存储介质中。 主控制器在存储分割片的同时从主机装置接收命令，根据存储各分割片之间的命令对存储介质执行数据处理，根据数据更新分割成分割片的管理信息 处理内容，并创建表示管理信息的更新内容的日志。 日志存储单元将日志存储在存储介质中。 恢复单元将存储在存储介质中的分割信息作为管理信息读取到管理存储器，根据存储在存储介质中的日志更新管理信息，并恢复更新的管理信息。
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公开(公告)号：US20110214033A1
公开(公告)日：2011-09-01
申请号：US12885962
申请日：2010-09-20
CPC分类号： G06F11/1048
摘要： According to one embodiment, a semiconductor memory device includes semiconductor memory chips having writable storage regions in which data is written. The data has one or more pieces of first data, and one or more pieces of the first data includes second data. The device includes a determining unit that determines a prescribed number or fewer of semiconductor memory chips to which the first data is written; a write controller that writes the the first data and redundant information calculated from the second data and used for correcting an error in the second data into the writable storage regions in the determined semiconductor memory chips; and a storage unit that stores identification information and region specifying information associated with each other. The identification information associates the second data and the redundant information, and the region specifying information specifies the storage regions in the semiconductor memory chips to which the first data included in the second data and the redundant information are written.
摘要翻译： 根据一个实施例，半导体存储器件包括具有可写入存储区域的数据被写入的半导体存储器芯片。 数据具有一个或多个第一数据，并且一个或多个第一数据包括第二数据。 该装置包括：确定单元，其确定写入第一数据的半导体存储器芯片的规定数量以下; 写入控制器，其将从第二数据计算出的第一数据和冗余信息写入第二数据中的错误，并将其写入到所确定的半导体存储器芯片中的可写入存储区域中; 以及存储单元，其存储彼此相关联的识别信息和区域指定信息。 所述识别信息将所述第二数据和所述冗余信息相关联，并且所述区域指定信息指定在所述第二数据中包含的所述第一数据和所述冗余信息被写入的所述半导体存储器芯片中的存储区域。
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公开(公告)号：US08453033B2
公开(公告)日：2013-05-28
申请号：US12885962
申请日：2010-09-20
IPC分类号： H03M13/09
CPC分类号： G06F11/1048
摘要： According to one embodiment, a semiconductor memory device includes semiconductor memory chips having writable storage regions in which data is written. The data has one or more pieces of first data, and one or more pieces of the first data includes second data. The device includes a determining unit that determines a prescribed number or fewer of semiconductor memory chips to which the first data is written; a write controller that writes the the first data and redundant information calculated from the second data and used for correcting an error in the second data into the writable storage regions in the determined semiconductor memory chips; and a storage unit that stores identification information and region specifying information associated with each other. The identification information associates the second data and the redundant information, and the region specifying information specifies the storage regions in the semiconductor memory chips to which the first data included in the second data and the redundant information are written.
摘要翻译： 根据一个实施例，半导体存储器件包括具有可写入存储区域的数据被写入的半导体存储器芯片。 数据具有一个或多个第一数据，并且一个或多个第一数据包括第二数据。 该装置包括：确定单元，其确定写入第一数据的半导体存储器芯片的规定数量以下; 写入控制器，其将从第二数据计算出的第一数据和冗余信息写入第二数据中的错误，并将其写入到所确定的半导体存储器芯片中的可写入存储区域中; 以及存储单元，其存储彼此相关联的识别信息和区域指定信息。 所述识别信息将所述第二数据和所述冗余信息相关联，并且所述区域指定信息指定在所述第二数据中包含的所述第一数据和所述冗余信息被写入的所述半导体存储器芯片中的存储区域。
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公开(公告)号：US08392476B2
公开(公告)日：2013-03-05
申请号：US12885941
申请日：2010-09-20
IPC分类号： G06F17/30
CPC分类号： G06F12/0246 , G06F2212/7205
摘要： According to one embodiment, a semiconductor memory device performs writing of data to a semiconductor memory element in response to a request to write the data with a specified logical block address from a host and performs writing of valid data to the semiconductor memory element for compaction according to a log-structured method. The semiconductor memory device adjusts a frequency of the writing response to a request from the host and a frequency of the writing for compaction according to a predetermined ratio.
摘要翻译： 根据一个实施例，半导体存储器件响应于从主机以指定的逻辑块地址写入数据的请求，执行将数据写入到半导体存储器元件，并且执行将有效数据写入半导体存储元件以进行压缩 以日志结构的方式。 半导体存储器装置根据预定的比例调整来自主机的请求的写入响应的频率和用于压缩的写入频率。
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公开(公告)号：US20110202812A1
公开(公告)日：2011-08-18
申请号：US12888822
申请日：2010-09-23
IPC分类号： G06F11/14
CPC分类号： G11C29/52 , G06F11/1008 , G06F11/1068
摘要： According to one embodiment, a semiconductor memory device includes semiconductor memory chips in which data requested to be written. The data has one or more pieces of first data in a predetermined unit. The device includes a write controller that writes the first data and redundancy information calculated by using a predetermined number of pieces of the first data and used for correcting an error in the predetermined number of pieces of the first data into different semiconductor memory chips; and a storage unit that stores identification information and region specifying information so as to be associated with each other. The identification information associates the first data and the redundancy information, and the region specifying information specifies a plurality of storage regions in the semiconductor memory chips to which the pieces of the first data and the redundancy information associated with each other are written.
摘要翻译： 根据一个实施例，半导体存储器件包括要求写入数据的半导体存储器芯片。 数据具有预定单元中的一个或多个第一数据。 该装置包括写入控制器，其写入通过使用预定数量的第一数据计算出的第一数据和冗余信息，并将其用于将预定数量的第一数据中的错误校正到不同的半导体存储器芯片中; 以及存储单元，其存储相互关联的识别信息和区域指定信息。 所述识别信息将所述第一数据和所述冗余信息相关联，并且所述区域指定信息指定所述第一数据和所述冗余信息相互写入的所述半导体存储器芯片中的多个存储区域。
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公开(公告)号：US20110202578A1
公开(公告)日：2011-08-18
申请号：US12885941
申请日：2010-09-20
IPC分类号： G06F17/30
CPC分类号： G06F12/0246 , G06F2212/7205
摘要： According to one embodiment, a semiconductor memory device performs writing of data to a semiconductor memory element in response to a request to write the data with a specified logical block address from a host and performs writing of valid data to the semiconductor memory element for compaction according to a log-structured method. The semiconductor memory device adjusts a frequency of the writing response to a request from the host and a frequency of the writing for compaction according to a predetermined ratio.
摘要翻译： 根据一个实施例，半导体存储器件响应于从主机以指定的逻辑块地址写入数据的请求，执行将数据写入到半导体存储器元件，并且执行将有效数据写入半导体存储元件以进行压缩 以日志结构的方式。 半导体存储器装置根据预定的比例调整来自主机的请求的写入响应的频率和用于压缩的写入频率。
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公开(公告)号：US08516182B2
公开(公告)日：2013-08-20
申请号：US12554272
申请日：2009-09-04
IPC分类号： G06F12/10
CPC分类号： G06F12/0246 , G06F2212/7207 , G06F2212/7209
摘要： A controller includes a storage for a translation table showing logical and physical addresses in a flash memory in correspondence with one another; another storage storing FAT information indicating the state of data stored in each of pages contained in each of blocks and FAT information identifiers each identifying a block to which pages each storing therein the data in the state indicated by the FAT information belong, while keeping them in correspondence with one another; yet another storage for a block management table showing block identifiers, use-state judging information indicating whether the corresponding block is used/unused, and the FAT information identifiers corresponding to all the blocks indicated as being used by the use-state judging information, while keeping them in correspondence with one another; and a controller controlling unit managing data stored in the flash memory by using the translation table, the FAT information, and the block management table.
摘要翻译： 控制器包括用于转换表的存储器，其中显示闪存中的逻辑和物理地址彼此对应; 指示存储在每个块中的每个页面中存储的数据的状态的FAT信息和每个识别由FAT信息指示的状态中存储有数据的页面所属的块的FAT信息标识符，同时保持它们 相互对应; 另一个用于表示块标识符的块管理表的存储器，指示是否使用相应块的使用状态判断信息以及与使用状态判断信息所使用的所有块对应的FAT信息标识符，而 保持彼此对应; 以及控制器控制单元，通过使用转换表，FAT信息和块管理表来管理存储在闪速存储器中的数据。
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公开(公告)号：US08612721B2
公开(公告)日：2013-12-17
申请号：US13037970
申请日：2011-03-01
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/1009 , G06F2212/7201 , G06F2212/7205
摘要： According to one embodiment, upon request from an information processor, a semiconductor storage controller writes pieces of data in predetermined units into storage locations in which no data has been written in erased areas within a semiconductor chip's storage area. A third table and a second table which is a subset thereof include physical addresses each indicating a storage location of each of pieces of the data within the semiconductor chip. The first table includes either information specifying a second table entry or information specifying a third table entry. The semiconductor storage controller records the first and the second tables into a volatile memory or records the first table into a volatile memory and the third table into a nonvolatile memory.
摘要翻译： 根据一个实施例，根据信息处理器的要求，半导体存储控制器以预定单位将多条数据写入在半导体芯片的存储区域内的擦除区域中没有数据写入的存储位置。 作为其子集的第三表和第二表包括各自表示半导体芯片内的每个数据的存储位置的物理地址。 第一表包括指定第二表条目的信息或指定第三表条目的信息。 半导体存储控制器将第一和第二表记录到易失性存储器中，或将第一表记录到易失性存储器中，将第三表记录到非易失性存储器中。
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公开(公告)号：US08495336B2
公开(公告)日：2013-07-23
申请号：US12883796
申请日：2010-09-16
IPC分类号： G06F13/12
CPC分类号： G06F12/0246 , G06F3/0608 , G06F3/061 , G06F3/0611 , G06F3/0631 , G06F3/0638 , G06F3/064 , G06F3/0644 , G06F3/0659 , G06F3/0665 , G06F3/0679 , G06F3/0688 , G06F12/00 , G06F12/16 , G06F2212/1016 , G06F2212/214 , G06F2212/7202 , G06F2212/7205
摘要： According to one embodiment, a write instructing unit instructs a data access unit to write, in a storage area of a data storage unit indicated by a first physical address, write object data, instructs a management information access unit to update address conversion information, and instructs a first access unit to update the first physical address. A compaction unit extracts a physical address of compaction object data, instructs the data access unit to read the compaction object data stored in a storage area of the data storage unit indicated by the physical address, instructs the data access unit to write the compaction object data in a storage area of the data storage unit indicated by a second physical address, instructs the management information access unit to update the address conversion information, and instructs a second access unit to update the second physical address.
摘要翻译： 根据一个实施例，写指令单元指示数据存取单元在由第一物理地址指示的数据存储单元的存储区中写入对象数据，指示管理信息访问单元更新地址转换信息，以及 指示第一个访问单元更新第一个物理地址。 压缩单元提取压缩对象数据的物理地址，指示数据访问单元读取由物理地址指示的数据存储单元的存储区域中存储的压缩对象数据，指示数据存取单元写入压缩对象数据 在由第二物理地址指示的数据存储单元的存储区域中，指示管理信息存取单元更新地址转换信息，并指示第二存取单元更新第二物理地址。
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公开(公告)号：US08448034B2
公开(公告)日：2013-05-21
申请号：US12888822
申请日：2010-09-23
CPC分类号： G11C29/52 , G06F11/1008 , G06F11/1068
摘要： According to one embodiment, a semiconductor memory device includes semiconductor memory chips in which data requested to be written. The data has one or more pieces of first data in a predetermined unit. The device includes a write controller that writes the first data and redundancy information calculated by using a predetermined number of pieces of the first data and used for correcting an error in the predetermined number of pieces of the first data into different semiconductor memory chips; and a storage unit that stores identification information and region specifying information so as to be associated with each other. The identification information associates the first data and the redundancy information, and the region specifying information specifies a plurality of storage regions in the semiconductor memory chips to which the pieces of the first data and the redundancy information associated with each other are written.
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