发明申请
- 专利标题: SEMICONDUCTOR MEMORY DEVICE
- 专利标题(中): 半导体存储器件
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申请号: US12885962申请日: 2010-09-20
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公开(公告)号: US20110214033A1公开(公告)日: 2011-09-01
- 发明人: Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno , Shigehiro Asano
- 申请人: Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno , Shigehiro Asano
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2010-044362 20100301
- 主分类号: G06F11/08
- IPC分类号: G06F11/08 ; G06F12/00
摘要:
According to one embodiment, a semiconductor memory device includes semiconductor memory chips having writable storage regions in which data is written. The data has one or more pieces of first data, and one or more pieces of the first data includes second data. The device includes a determining unit that determines a prescribed number or fewer of semiconductor memory chips to which the first data is written; a write controller that writes the the first data and redundant information calculated from the second data and used for correcting an error in the second data into the writable storage regions in the determined semiconductor memory chips; and a storage unit that stores identification information and region specifying information associated with each other. The identification information associates the second data and the redundant information, and the region specifying information specifies the storage regions in the semiconductor memory chips to which the first data included in the second data and the redundant information are written.
公开/授权文献
- US08453033B2 Semiconductor memory device 公开/授权日:2013-05-28
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