Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12885941Application Date: 2010-09-20
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Publication No.: US08392476B2Publication Date: 2013-03-05
- Inventor: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- Applicant: Shigehiro Asano , Kenichiro Yoshii , Kazuhiro Fukutomi , Shinichi Kanno
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-031797 20100216; JP2010-206116 20100914
- Main IPC: G06F17/30
- IPC: G06F17/30

Abstract:
According to one embodiment, a semiconductor memory device performs writing of data to a semiconductor memory element in response to a request to write the data with a specified logical block address from a host and performs writing of valid data to the semiconductor memory element for compaction according to a log-structured method. The semiconductor memory device adjusts a frequency of the writing response to a request from the host and a frequency of the writing for compaction according to a predetermined ratio.
Public/Granted literature
- US20110202578A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-08-18
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